TQP7M9104
2W High Linearity Amplifier
Applications
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
General Purpose Wireless
24-pin QFN 4x4mm SMT Package
Product Features Functional Block Diagram
700-4000 MHz
+32.8 dBm P1dB
+49.5 dBm Output IP3
15.8 dB Gain @ 2140 MHz
+5V Single Supply, 435 mA Collector Current
Internal RF overdrive protection
Internal DC overvoltage protection
Internal Active Bias
On chip ESD protection
Shut-down Capability
Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz,
32.8 dBm CW Pout or 23.5 dBm WCDMA Pout
General Description Pin Configuration
The TQP7M9104 is a high linearity driver amplifier in
industry standard, RoHS compliant, QFN surface mount
package. This InGaP/GaAs HBT delivers high
performance across 700-4000 GHz range of frequencies
with 15.8 dB Gain, +49.5 dBm OIP3 and +32.5 dB
m
P1dB at 2.14 GHz while only consuming 435 mA
quiescent collector current. All devices are 100% RF an
d
DC tested.
The TQP7M9104 incorporates on-chip features tha
t
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF inpu
t
power levels that may occur in a system.
The TQP7M9104 is targeted for use as a driver amplifie
r
in wireless infrastructure where high linearity, mediu
m
power, and high efficiency are required. The device is an
excellent candidate for transceiver line cards and high
power amplifiers in current and next generation multi-
carrier 3G / 4G base stations.
Standard T/R size =2500 pieces on a 13” reel.
Pin # Symbol
1 Vbias
2, 3, 6, 7, 8, 9, 10, 11,
12,13, 17, 19, 20, 21, 22,
23, 24
GND / NC
4, 5 RFin
14, 15, 16 RFout/Vcc
18 Iref
Ordering Information
Part No. Description
TQP7M9104 2 W High Linearity Amplifier
TQP7M9104-PCB900 TQP7M9104 920-960MHz EVB
TQP7M9104-PCB2140 TQP7M9104 2.11-2.17GHz EVB
Advanced Data Sheet: Rev C 10/17/11 - 1 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
TQP7M9104
2W High Linearity Amplifier
Advanced Data Sheet: Rev C 10/17/11 - 2 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Specifications
Absolute Maximum Ratings
Parameter Rating
Storage Temperature -65 to +150 oC
Device Voltage, Vcc 6.5 V
Maximum Input Power, CW +30 dBm
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter Min Typ Max Units
Vcc +5 +5.25 V
Tcase -40 +85
oC
Tj (for>106 hours MTTF) 160
oC
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test Conditions:VCC = +5V, ICQ = 435 mA, T = 25C using a TQP7M9104-PCB2140 application circuit.
Parameter Conditions Min Typical Max Units
Operational Bandwidth 700 4000 MHz
Test Frequency 2140 MHz
Power Gain 15.8 dB
Input Return Loss 12 dB
Output Return Loss 9.5 dB
Output IP3 (+17 dBm/tone, ∆f = 1 MHz) See Note 1. +49.5 dBm
WCDMA Channel Power (at -50 dBc ACLR) See Note 2. 23.8 dBm
Output P1dB +32.8 dBm
Noise Figure 4.4 dB
Quiescent Collector Current, Icq 435 mA
Vcc +5 V
Iref 19 mA
Thermal Resistance (jnc to case) θjc 15.7
oC/W
Notes:
1. OIP3 is measured with 1 MHz tone spacing.
2. Using W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 9.7 dB @ 0.01% Probability, 3.84 MHz BW
TQP7M9104
2W High Linearity Amplifier
Application Circuit 920-960 MHz (TQP7M9104-PCB900)
Bill of Material
Ref Des Value Description Manuf. Part Number
U1 n/a 2W High Linearity Amplifier TriQuint TQP7M9104
n/a n/a Printed Circuit Board TriQuint 1078282
C8 6.8 pF Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P AVX 06035J6R8ABSTR
C9 2.7 pF Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P AVX 06035J2R7ABSTR
B1, L3, L4, R3 0 Ω Resistor, Chip, 0603, 5%, 1/16W various
L5 6.8 nH Inductor, 0603, 5% Toko LL1608-FSL6N8
C3 4.7 pF Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P AVX 06035J4R7ABSTR
C2 8.2 pF Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P AVX 06035J8R2ABSTR
C10 22 pF Capacitor, Chip, 0603, 5%, 50 V, NPO/COG various
C1, C14, C15, C11 100 pF Capacitor, Chip, 0603, 5%, 50V, NPO/COG various
L1 18 nH Inductor, 0805, 5%, Coilcraft CS Series Coilcraft 0805CS-330XJLB
C17 1000 pF Capacitor, Chip, 0603, 10%, 50V, NPO/COG various
C13 0.1 uF Capacitor, Chip, 0603, 50V, X5R, 10% various
C7 10 uF Capacitor , Tantalum, 6032, 35V, 10% various
R2 51 Ω Resistor, Chip, 0603, 5%, 1/16W various
R6 220 Ω Resistor, Chip, 0603, 1%, 1/16W various
R7 110 Ω Resistor, Chip, 0603, 1%, 1/16W various
R1 33 nH Inductor, 0603, 5% Toko LL1608-FSL33N
R8, R4, C12, C4,D3 n/a Do Not Place
N
otes:
1. See PC Board Layout under Application Information section for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistor may be replaced with copper trace in the target application layout.
4. Iref can be used as device power down current by placing R7 at location R8.
5. The recommended component values are dependent upon the frequency of operation.
6. All components are of 0603 size unless stated on the schematic.
7. R1 is critical for device linearity performance.
8. Critical component placement locations:
Distance between center of C8 and TQP7M9104 (U1) device package is 190 mil.
Distance between center of L5 and TQP7M9104 (U1) device package is 452 mil.
Distance between center of C2 and TQP7M9104 (U1) device package is 305 mil.
Distance between center of C9 and TQP7M9104 (U1) device package is 275 mil.
Advanced Data Sheet: Rev C 10/17/11 - 3 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
TQP7M9104
2W High Linearity Amplifier
Typical Performance 920-960 MHz
Frequency MHz 920 940 960
Gain dB 20.8 21 21
Input Return Loss dB -13 -12 -11
Output Return Loss dB -9 -11.8 -15
Output P1dB dBm +33.9 +33.8 +33.4
Output IP3 (+23 dBm/tone, ∆f = 1 MHz) dBm +45 +45 +45
WCDMA Channel power (at -50 dBc ACLR) [1] dBm +24 +23.5 +23
Supply Voltage, Vcc V +5
Quiescent Collector Current, Icq mA 435
Reference Current , Iref mA 19
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
RF Performance Plots 920-960 MHz
18
19
20
21
22
23
0.90 0.92 0.94 0.96 0.98 1.00
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
- 40
°
C
+25
°
C
-20
-15
-10
-5
0
0.90 0.92 0.94 0.96 0.98 1.00
Return Loss (dB)
Frequency (GHz)
Input Return Loss vs. Frequency
- 40
°
C
+25
°
C
+85
°
C
+85
°
C
-20
-15
-10
-5
0
0.90 0.92 0.94 0.96 0.98 1.00
Return Loss (dB)
Frequency (GHz)
Output Return Loss vs. Frequency
- 40
°
C
+25
°
C
32
33
34
35
36
37
0.92 0.93 0.94 0.95 0.96
P1dB (dBm)
Frequency (GHz)
P1dB vs. Temperature
+85
°
C
+25
°
C
−40
°
C
+85
°
C
Advanced Data Sheet: Rev C 10/17/11 - 4 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
TQP7M9104
2W High Linearity Amplifier
30
35
40
45
50
55
21 22 23 24 25 26 27
OIP3 (dBm)
Output Power / Tone(dBm)
OIP3 vs. Output Power vs. Temperature
1MHz Tone Spacing
- 40
°
C
+25
°
C
30
35
40
45
50
55
21 22 23 24 25 26 27
OIP3 (dBm)
Output Power / Tone(dBm)
OIP3 vs. Output Power vs. Frequency
0.92 GHz
0.94 GHz
0.96 GHz
1MHz Tone Spacing
Temp.=+25
o
C
+85
°
C
-65
-60
-55
-50
-45
-40
12 14 16 18 20 22 24 26
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power vs. Temperature
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
Frequency : 0.94 GHz
- 40
°
C
+25
°
C
-65
-60
-55
-50
-45
-40
12 14 16 18 20 22 24 26
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power vs. Frequency
0.92 GHz
0.94 GHz
0.96 GHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
Temp.=+25
o
C
+85
°
C
400
500
600
700
800
900
1000
1100
16 18 20 22 24 26 28 30 32 34
Icc (mA)
Output Power (dBm)
Collector Current vs. Output Power
Temp.=+25
o
C
Frequency : 0.94 GHz
CW Signal
Advanced Data Sheet: Rev C 10/17/11 - 5 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
TQP7M9104
2W High Linearity Amplifier
Application Circuit 2110-2170 MHz (TQP7M9104-PCB2140)
24
23
22
21
20
19
7
8
9
10
11
12
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Bill of Material
Ref Des Value Description Manuf. Part Number
U1 n/a 2W High Linearity Amplifier TriQuint TQP7M9104
n/a n/a Printed Circuit Board TriQuint 1078282
C8 1.5 pF Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P AVX 06035J1R5ABSTR
C9 2.4 pF Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P AVX 06035J2R4ABSTR
C2 2.7 pF Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P AVX 06035J2R7ABSTR
B1, L3, L4, R3, C11 0 Ω Resistor, Chip, 0603, 5%, 1/16W various
C10, C15 22 pF Capacitor, Chip, 0603, 5%, 50V, NPO/COG various
C1, C14, C3 100 pF Capacitor, Chip, 0603, 5%, 50V, NPO/COG various
L1 18 nH Inductor, 1008, 5%, Ceramic Coilcraft 1008HQ-18NXJL
C17 1000 pF Capacitor, Chip, 0603, 10%, 50V, NPO/COG various
C13 0.1 uF Capacitor, Chip, 0603, 10%, 50V, X5R various
C7 10 uF Capacitor , Tantalum, 6032, 20 %, 50V various
R2 51 Ω Resistor, Chip, 0603, 5%, 1/16W various
R6 220 Ω Resistor, Chip, 0603, 1%, 1/16W various
R7 110 Ω Resistor, Chip, 0603, 1%, 1/16W various
R1 120 nH Inductor, 0603, 5% Toko LL1608-FSLR12J
R8, R4, C12, C4, D3 n/a Do Not Place
N
otes:
1. See PC Board Layout under Application Information section for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistor may be replaced with copper trace in the target application layout.
4. Iref can be used as device power down current by placing R7 at location R8.
5. The recommended component values are dependent upon the frequency of operation.
6. All components are of 0603 size unless stated on the schematic.
7. R1 is critical for device linearity performance.
8. Critical component placement locations:
Distance between center of C8 and TQP7M9104 (U1) device package is 50 mil.
Distance between center of C2 and TQP7M9104 (U1) device package is113 mil.
Distance between center of C9 and TQP7M9104 (U1) device package is 275 mil.
Advanced Data Sheet: Rev C 10/17/11 - 6 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
TQP7M9104
2W High Linearity Amplifier
Typical Performance 2110-2170 MHz
Frequency MHz 2110 2140 2170
Gain dB 15.8 15.8 15.8
Input Return Loss dB -12.4 -12.0 -11.8
Output Return Loss dB -8.7 -9.5 -10.5
Output P1dB dBm +32.9 +32.8 +32.8
Output IP3 (+17 dBm/tone, ∆f = 1 MHz) dBm +49 +49.5 +50
WCDMA Channel power (at -50 dBc ACLR) [1] dBm +23.5 +23.8 +24.0
Noise Figure dB 4.4 4.4 4.6
Supply Voltage, Vcc V +5
Quiescent Collector Current, Icq mA 435
Reference Current , Iref mA 19
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
RF Performance Plots 2110-2170 MHz
13
14
15
16
17
18
2.10 2.12 2.14 2.16 2.18 2.20
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
-40
°
C
+25
°
C
-20
-15
-10
-5
0
2.10 2.12 2.14 2.16 2.18 2.20
Return Loss (dB)
Frequency (GHz)
Input Return Loss vs. Frequency
-40
°
C
+25
°
C
+85
°
C
+85
°
C
-20
-15
-10
-5
0
2.10 2.12 2.14 2.16 2.18 2.20
Return Loss (dB)
Frequency (GHz)
Output Return Loss vs. Frequency
-40
°
C
+25
°
C
30
31
32
33
34
35
2.11 2.12 2.13 2.14 2.15 2.16 2.17
P1dB (dBm)
Frequency (GHz)
P1dB vs. Temperature
+85
°
C
+25
°
C
−40
°
C
+85
°
C
Advanced Data Sheet: Rev C 10/17/11 - 7 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
TQP7M9104
2W High Linearity Amplifier
30
35
40
45
50
55
13 15 17 19 21 23 25
OIP3 (dBm)
Output Power / Tone(dBm)
OIP3 vs. Output Power vs. Temperature
1MHz Tone Spacing
- 40
°
C
+25
°
C
30
35
40
45
50
55
13 15 17 19 21 23 25
OIP3 (dBm)
Output Power / Tone(dBm)
OIP3 vs. Output Power vs. Frequency
2.11 GHz 2.14 GHz 2.17 GHz
1MHz Tone Spacing
Temp.=+25
o
C
+85
°
C
-65
-60
-55
-50
-45
-40
17 19 21 23 25 27
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power vs. Temperature
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
Frequency : 2.14 GHz
- 40
°
C
+25
°
C
-65
-60
-55
-50
-45
-40
17 19 21 23 25 27
ACLR (dBm)
Output Power (dBm)
ACLR vs. Output Power vs. Frequency
2.11 GHz
2.14 GHz
2.17 GHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
Temp.=+25
o
C
+85
°
C
400
500
600
700
800
900
1000
16 18 20 22 24 26 28 30 32 34
Collector Current (mA)
Output Power (dBm)
Icc vs. Output Power
Temp.=+25
o
C
Frequency : 2.14 GHz
CW Signal
2.0
3.0
4.0
5.0
6.0
2.11 2.12 2.13 2.14 2.15 2.16 2.17
NF (dB)
Frequency (GHz)
Noise Figure vs. Frequency
Advanced Data Sheet: Rev C 10/17/11 - 8 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
TQP7M9104
2W High Linearity Amplifier
Pin Configuration and Description
12
11
10
9
8
724
23
22
21
20
19
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Pin Symbol Description
1 Vbias Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc.
2, 3, 6,7, 8, 9, 10, 11,
12, 13,17, 19, 20, 21,
22, 23, 24
GND/NC No internal connection. This pin can be grounded or N/C on PCB. Land pads should be
provided for PCB mounting integrity.
4, 5 RFin RF Input. DC voltage present, blocking capacitor required. Requires external match for
optimal performance.
14, 15, 16 RFout / Vcc RF Output. DC Voltage present, blocking cap required. Requires external match for optimal
performance.
18 Iref Reference current into internal active bias current mirror. Current into Iref sets device
quiescent current. Also, can be used as on/off control.
Backside paddle RF/DC GND
Multiple Vias should be employed to minimize inductance and thermal resistance. Use
recommended via pattern shown under mounting configuration and ensure good solder
attach for optimum thermal and electrical performance
Applications Information
PC Board Layout
PCB Material (stackup):
1 oz. Cu top layer
0.014 inch Nelco N4000-13, εr=3.7
1 oz. Cu middle layer 1
Core Nelco N4000-13
1 oz. Cu middle layer 2
0.014 inch Nelco N-4000-13
1 oz. Cu bottom layer
Finished board thickness is 0.062±.006
50 ohm line dimensions: width = .028”
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary from
supplier to supplier, careful process development is
recommended.
Advanced Data Sheet: Rev C 10/17/11 - 9 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
TQP7M9104
2W High Linearity Amplifier
Mechanical Information
Package Information and Dimensions
This package is lead-free, RoHS-compliant, and green. The plating material on the pins is annealed matte tin over copper. It is compatible
with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes.
The component will be laser marked with “7M9104” product label with an alphanumeric lot code on the top surface of the package.
7M9104
Mounting Configuration
All dimensions are in millimeters (inches). Angles are in
degrees.
.64 TYP
2.70
2.70
2.70
2.70
COMPONENT SIDE
BACK SIDE
.64 TYP
16X .38
.50 PITCH, TYP
FULL R.19
24X .70
Notes:
1. Ground vias are critical for the proper RF performance of
this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25
mm (.010”).
2. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
Advanced Data Sheet: Rev C 10/17/11 - 10 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
TQP7M9104
2W High Linearity Amplifier
Product Compliance Information
ESD Information
ESD Rating: Class 1C
Value: ≥ 1000 V and < 2000 V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: ≥ 1000 V min
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
Solderability
The plating material on the pins is annealed matte tin
over copper.
Compatible with both lead-free (maximum 260 °C
reflow temperature) and tin/lead (maximum 245 °C
reflow temperature) soldering processes.
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com Tel: +1.503.615.9000
Email: info-sales@tqs.com Fax: +1.503.615.8902
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is
entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and
verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any
use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Advanced Data Sheet: Rev C 10/17/11 - 11 of 11- Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Qorvo:
TQP3M9018-PCB-RF TQP3M9019-PCB-RF TQP4M9071-PCB-IF TQP4M9071-PCB-RF TQP8M9013-PCB2140
TQP3M9008-PCB-IF TQP3M9008-PCB-RF TQP4M0011-PCB TQP3M9038-PCB
TriQuint:
TQP7M9104 TQP7M9104-PCB2140 TQP7M9104-PCB900
