BSS138 see epee een pean ee FAIRCHILD ed SEMICONDUCTOR im BSS138 May 1995 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features # 0.22 A, 50V. Ragin, = 3.5.Q @ Veg = 10V. = High density cell design for extremely low R = Rugged and Relaible = Compact industry standard SOT-23 surface mount DS(ON)* package. SOT-23 Absolute Maximum Ratings 1, =25 C unless otherwise noted Symbol | Parameter BSS138 Units Voss Drain-Source Voltage 50 v Ver Drain-Gate Voltage (Ry < 20KQ) 50 Voss Gate-Source Voltage - Continuous +20 - Non Repetitive (T,, < 50 yS) +40 l, Drain Current - Continuous 0.22 A - Pulsed 0.88 Py Maximum Power Dissipation 0.36 w Derate Above 25 C 28 mW/ C T,.Tsr_ | Operating and Storage Temperature Range -55 to 150 c T Maximum Lead Temperature for Soldering 300 c Purposes, 1/16 from Case for 10 Seconds THERMAL CHARACTERISTICS Rwa Thermal Resistance, Junction to Ambient 350 CW 5-90 BSS138 Rev. A1 Electrical Characteristics (1, = 25c unless otherwise noted) Symbol | Parameter Conditions | Min | Typ | Max Units | (~) OFF CHARACTERISTICS oo BV peg Drain-Source Breakdown Voltage Vigg = OV, [p= 250 WA 50 vy | @ loss Zero Gate Voltage Drain Current Vog = 90 V, Veg= OV 0.5 pA [T,=125C 5 | pA Vpg = 30 V, Veg= OV 100 nA lessr Gate - Body Leakage, Forward Vo5 = 20 V, Vog = OV 100 nA lessr Gate - Body Leakage, Reverse Veg =-20 V, Vog= OV -100 | nA ON CHARACTERISTICS (note +) Vestn Gate Threshold Voltage Vos = Veg Ip = 1 mA 0.8 13 16 v Rosny Static Drain-Source On-Resistance Veg = 10 V, |, =0.22A 0.81 3.5 Q Veg = 4.5 V, |, =0.22 A 116 | 6 Ors Forward Transconductance Vos = 10 V, | = 0.22 A 0.12 | 0.45 s DYNAMIC CHARACTERISTICS C,, Input Capacitance Vog = 25V, Veg = OV, 30 60 | pF C. Output Capacitance f=1.0MHz 15 | 25 | pF Ce. Reverse Transfer Capacitance 75 10 pF SWITCHING CHARACTERISTICS (note 1) toy Tum - On Delay Time Von =30V, |, =0.29A, 8 ns t Tum - On Rise Time Veg = 10 V, Reey = 50 02 12 ns toon Tum - Off Delay Time 16 ns 4 Tum - Off Fall Time 22 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Source Current 0.22 A legs Maximum Pulse Source Current (vote 1) 0.88 A Voep Drain-Source Diode Forward Voltage Vog = OV, 1,=0.44A 08 14 Vv Note: 1. Pulse Test: Pulse Width < 300 pts, Duty Cycle < 2.0%. 5-91 BSS138 Rev. Al BSS138 Typical Electrical Characteristics oa nN = a te on Ip , DRAIN-SOURCE CURRENT (A) an 0 1 2 3 4 Vps . DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. N Ip = 220mA Ves = 10V F ps(on). NORMALIZED DRAIN-SOURCE ON-RESISTANCE oO ek kt & & = & & & & 2 -60 -25 Q 25 50 75 100 Ty, JUNCTION TEMPERATURE ("C) 125 Figure 3. On-Resistance Variation with Temperature. Ip, DRAIN CURRENT (A) o os 9 2 Nm ow . ao nD 9 0.5 1 1.5 2 2.5 3 35 V gg: GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 150 , NORMALIZED E ON-RESISTANCE DRAIN-SOu 0 05 1 15 2 Ip , DRAIN CURRENT (A) Figure 2. On-Resistance Variation wih Gate Voltage and Drain Current. hp a nm T Jee / Vas= 10V J* 128C 4 _ \ 25C Rips(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE on -55C a 2 a 5 10 15 20 25 30 Ip, DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Drain Current and Temperature. 50 -25 9 25 50 75 S12 T w : = g Vos= Vas Baa hs Ip = 250pA ai D HA... a | o> E | zd 1 t =x I cn ow 2 EF 09 >G Z mo 2 9 08 w | 5 | | Oar ! 100125 150 Ty, JUNCTION TEMPERATURE (C) Figure 6. Gate Threshold Variation with Temperature. 5-92 BSS138 Rev. A1 Typical Electrical Characteristics (continued) eo 6 oe + 3 8 S$ @ = Bw BVpss , NORMALIZED 5 8 DRAIN-SOURCE BREAKDOWN VOLTAGE (V) S o S a 50 25 0 25 50 75 100 Ty . JUNCTION TEMPERATURE (C) 125 160 Figure 7. Breakdown Voltage Variation with Temperature. a o iS) a CAPACITANCE (pF) f = 1 MHz Ves = OV o 5 - 0.1 02 0.5 1 2 5 10 20 50 Vos , DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. Figure 11. Switching Test Circuit. eS Is, REVERSE DRAIN CURRENT (A) 2 g 0.001 0.2 0.4 06 0.8 1 1.2 Vsp . BODY DIODE FORWARD VOLTAGE () Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Vag . GATE-SOURCE VOLTAGE (V) 0 0.2 0.4 06 0.8 1 1.2 14 Qg , GATE CHARGE (nC} Figure 10. Gate Charge Characteristics. INVERTED 50% + -~ PULSE WIDTH Figure 12. Switching Waveforms. BSS138 Rev. A1 5-93 8lSsaq BSS138 Typical Electrical Characteristics (continued) o & Ty = 25C [a 425C [I o a Veg = 20V SINGLE PULSE T, = 25C Ip, DRAIN CURRENT (A) io Vpg = 10V | rs, TRANSCONDUCTANCE (SIEMENS) oO R 0.005 0.3 06 0.9 12 15 1 5 10 20 50 100 Ip , DRAIN CURRENT (A) Vag > DRAIN-SOURCE VOLTAGE (V) oO Figure 13. Transconductance Variation with Drain Figure 14. Maximum Safe Operating Area. Current and Temperature. 0.5 02 Resa M= ri)" Raga o.4 Roy, = 350 CW QJA 0.05 9.02 P(pK) | 0.01 1) 0.01 she < -{,> Singie Ty: Ta =P "Rega (t) 0.002 Duty Cycle, D =t, /t, rt), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.001 0.0001 0.001 0.01 0.41 1 10 100 300 ty, TIME (sec) Figure 15. Transient Thermal Response Curve. 5-94 BSS138 Rev. At