www.irf.com 107/01/04
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 90
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A
IDM Pulsed Drain Current360
PD @TC = 25°C Maximum Power Dissipation 120 W
PD @TA = 25°C Maximum Power Dissipation 3.1 W
Linear Derating Factor 0.96 mW/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
IRF3709PbF
IRF3709SPbF
IRF3709LPBF
SMPS MOSFET
HEXFET® Power MOSFET
VDSS RDS(on) max ID
30V 9.0mΩ90A
Notes through are on page 11
Absolute Maximum Ratings
D2Pak
IRF3709S
TO-220AB
IRF3709 TO-262
IRF3709L
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.04
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient––– 62
RθJA Junction-to-Ambient (PCB mount)––– 40
Applications
Benefits
lUltra-Low Gate Impedance
lVery Low RDS(on) at 4.5V VGS
lFully Characterized Avalanche Voltage
and Current
lHigh Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
lHigh Frequency Buck Converters for
Server Processor Power Synchronous FET
lOptimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
lLead-Free
PD - 95495
IRF3709/S/LPbF
2www.irf.com
Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V
––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V
trr Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = 30A, VR=15V
Qrr Reverse Recovery Charge ––– 46 69 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 30A, VR=15V
Qrr Reverse Recovery Charge ––– 52 78 nC di/dt = 100A/µs
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 382 mJ
IAR Avalanche Current––– 30 A
Avalanche Characteristics
S
D
G
Diode Characteristics
90
360
A
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 53 ––– ––– S VDS = 15V, ID = 30A
QgTotal Gate Charge –– – 27 41 I D = 15A
Qgs Gate-to-Source Charge ––– 6.7 ––– nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge ––– 9.7 ––– VGS = 5.0V
Qoss Output Gate Charge ––– 22 ––– VGS = 0V, VDS = 10V
td(on) Turn-On Delay Time ––– 11 ––– VDD = 15V
trRise Time ––– 171 ––– ID = 30A
td(off) Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω
tfFall Time ––– 9.2 ––– VGS = 4.5V
Ciss Input Capacitance ––– 2672 ––– VGS = 0V
Coss Output Capacitance ––– 1064 ––– pF VDS = 16V
Crss Reverse Transfer Capacitance ––– 109 ––– ƒ = 1.0MHz
VSD Diode Forward Voltage
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 – –– ––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.4 9 .0 VGS = 10V, ID = 15A
––– 7 .4 1 0.5 VGS = 4.5V, ID = 12A
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V V DS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance mΩ
IRF3709/S/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
2.0 3.0 4.0 5.0 6.0 7.0
V = 15V
20µs PULS E WI DTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 16
0
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
90A
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
IRF3709/S/LPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 5 10 15 20 25 30
0
1
2
3
4
5
6
Q , Total Ga te Charge (nC)
V , Gat e- to-Source Voltage ( V)
G
GS
I =
D30A
V = 6V
DS
V = 15V
DS
V = 24V
DS
0.1
1
10
100
1000
0.2 0.8 1.4 2.0 2.
6
V ,Sour ce-to- Drain Volt age (V)
I , Reverse Drain C urrent (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Curr ent (A)I , Drain Curr ent (A)
DS
D
10us
100us
1ms
10ms
1 10 100
0
1000
2000
3000
4000
V , Drai n-to-Source Voltage (V)
C, Capaci tance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
IRF3709/S/LPbF
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 15
0
0
20
40
60
80
100
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
IRF3709/S/LPbF
6www.irf.com
QG
QGS QGD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
13A
19A
30A
IRF3709/S/LPbF
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF3709/S/LPbF
8www.irf.com
LEAD ASS IGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1. 32 (. 0 52)
1. 22 (. 0 48)
3X 0.55 ( .022)
0.46 ( .018)
2.92 (.115)
2.64 (.104)
4.69 ( .185)
4.20 ( .165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1. 15 (. 0 45)
MIN
6.47 ( .255)
6.10 ( .240)
3.78 ( .149)
3.54 ( .139)
- A -
10.54 (.41 5)
10.29 (.40 5)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14. 0 9 (. 55 5)
13. 4 7 (. 53 0)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT I NCL UDE BURRS .
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
I GBTs, CoPAC
K
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
THIS IS AN IR F1010
L OT CODE 1789
ASSEMBLED ON WW 19, 1997 PART NU MBE R
ASSEMBLY
LOT CODE
DAT E CODE
YEAR 7 = 1997
LINE C
WE E K 19
LOGO
RECTIFIER
INTERNATIONAL
Note: "P" in assem bly line
position indicates "Lead-Free"
IRF3709/S/LPbF
www.irf.com 9
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in assembly line
position indicates "Lead-Free"
F530S
THIS IS AN IRF530S WITH
LO T C ODE 8024
ASSEM BLED O N WW 02, 2000
IN THE ASS EMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBE
R
DATE CODE
YEAR 0 = 2000
WE EK 02
LINE L
OR
F530S
A = AS S EMB LY SIT E CODE
WEEK 02
P = D E S IGNAT ES LEAD -F REE
PRODUCT (OPTIONAL)
RECTIFIER
INTERNATIONAL
LOGO
LOT COD E
AS S EMB LY YEAR 0 = 2000
DATE CODE
PART NUMBER
IRF3709/S/LPbF
10 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
ASSEMBLY
LOT CODE
RECTIFIER
INTERNATIONAL
A SSEMBLED ON W W 19, 1997
Note: " P" in assembly line
posi tion indicates "L ead-Fr ee"
IN THE ASSEMBLY LINE "C" LOGO
THIS IS AN IRL3103L
LOT CODE 1 789
EXAMPLE:
LINE C
DATE CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
A = ASSEMB LY SITE CODE
WEEK 19
YEAR 7 = 1997
DATE CODE
OR
IRF3709/S/LPbF
www.irf.com 11
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 0.85mH
RG = 25Ω, IAS = 30A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
This is only applied to TO-220AB package
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DIRECTION
1. 85 (. 07 3)
1. 65 (. 06 5)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11. 60 (. 457)
11. 40 (. 449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.014 5)
0.342 (.013 5)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362
)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONT ROLL ING DIMENSIO N: M IL LIMETER.
3. DIMENSION MEASURED @ HUB.
4. IN CL UDES FL A NGE DISTORTION @ OUT ER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/