© Semiconductor Components Industries, LLC, 1994
October, 2016 Rev. 6
1Publication Order Number:
MMBTA13LT1/D
MMBTA13L, SMMBTA13L,
MMBTA14L, SMMBTA14L
Darlington Amplifier
Transistors
NPN Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCES 30 Vdc
CollectorBase Voltage VCBO 30 Vdc
EmitterBase Voltage VEBO 10 Vdc
Collector Current Continuous IC300 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
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Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBTA13LT1G,
SMMBTA13LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
MMBTA14LT1G,
SMMBTA14LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
COLLECTOR 3
BASE
1
EMITTER 2
SOT23 (TO236)
CASE 318
STYLE 6
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1x M G
G
1x = Device Code
x = M for MMBTA13LT1G,
SMMBTA13LT1G
x = N for MMBTA14LT1G,
SMMBTA14LT1G, T3G
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
SMMBTA14LT3G SOT23
(PbFree)
10,000 / Tape &
Reel
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES 30
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO 100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO 100
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBTA13, SMMBTA13
MMBTA14, SMMBTA14
(IC = 100 mAdc, VCE = 5.0 Vdc)
MMBTA13, SMMBTA13
MMBTA14, SMMBTA14
hFE
5000
10,000
10,000
20,000
CollectorEmitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat) 1.5
Vdc
BaseEmitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE 2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 4)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT125
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v300 ms, Duty Cycle v2.0%.
4. fT = |hfe| ftest.
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
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3
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (kW)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS 0
IC = 1.0 mA
100 mA
10 mA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 mA
10 mA
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 mA
100 mA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
IC = 1.0 mA
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
www.onsemi.com
4
SMALLSIGNAL CHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
200k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25°C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|hfe|, SMALL-SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
Cobo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k 7.0 10 20 30 50 70 100 200 300 500
TJ = 125°C
25°C
-55°C
VCE = 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
TJ = 25°C
IC = 10 mA 50 mA 250 mA 500 mA
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
-1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6 7.0 10 20 30 50 70 100 200 300 500
VBE(sat) @ IC/IB = 1000
RV, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
TJ = 25°C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
25°C TO 125°C
-55°C TO 25°C
*RqVC FOR VCE(sat)
qVB FOR VBE
25°C TO 125°C
-55°C TO 25°C
*APPLIES FOR IC/IB hFE/3.0
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
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5
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0k
0.4
700
500
300
200
100
70
50
30
20
10 0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
ZqJC(t) = r(t) RqJCTJ(pk) - TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) RqJATJ(pk) - TA = P(pk) ZqJA(t)
1.0 ms
100 ms
TC = 25°C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTYCYCLE +t1f +t1
tP
PEAK PULSE POWER = PP
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
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6
PACKAGE DIMENSIONS
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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