2N1893S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N1893SJ) * JANTX level (2N1893SJX) * JANTXV level (2N1893SJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 4500 Reference document: MIL-PRF-19500/182 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 60OC Power Dissipation, TC = 25OC Derate linearly above 25OC TC = 25C unless otherwise specified Symbol VCEO VCBO Rating 80 120 Unit Volts Volts VEBO 7 Volts IC 500 mA 0.8 5.7 3.0 17.2 Thermal Resistance RJA 175 W mW/C W mW/C C/W Operating Junction Temperature Storage Temperature TJ TSTG -65 to +200 C Copyright 2002 Rev. F PT PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N1893S Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Symbol V(BR)CEO Test Conditions IC = 30 mA Min 80 Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 mA, RBE = 10 100 Collector-Base Cutoff Current Emitter-Base Cutoff Current ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Typ Units Volts Volts 100 10 15 100 10 VCB = 120 Volts VCB = 90 Volts VCE = 90 Volts, TA = 150 OC VEB = 7 Volts VEB = 5 Volts On Characteristics Max A nA A A nA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat VCEsat Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts, TA = -55 OC IC = 150 mA, IB = 15 mA IC = 150 mA, IB = 15 mA Min 20 35 40 20 Typ Max Units 120 1.3 5.0 Volts Volts Max Units Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE1 hFE2 Test Conditions VCE = 10 Volts, IC = 50 mA, f = 20 MHz f = 1 kHz VCE = 5 Volts, IC = 1 mA VCE = 10 Volts, IC = 5 mA Min Typ 3 10 35 45 100 150 4 8 Short Circuit Input Impedance hie VCB = 10V, IC = 5mA Open Circuit Output Admittance hoe VCB = 10V, IC = 5mA 0.5 Open Circuit reverse Voltage Transfer Ratio hre VCB = 10V, IC = 5mA 1.5x10-4 Open Circuit Output Capacitance COBO VCB = 10 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 2 15 pF 30 ns Switching Characteristics Pulse Response Copyright 2002 Rev. F ton + toff Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2