TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK20J50D Switching Regulator Applications Unit: mm 20.5 0.5 2.0 0.3 Absolute Maximum Ratings (Ta = 25C) 1.0 0.3 0.25 Drain-source voltage VDSS 500 V Gate-source voltage VGSS 30 V ID 20 DC Drain current (Note 1) IDP 80 PD 280 W Single pulse avalanche energy (Note 2) EAS 470 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 28 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C (Note 1) 5.45 0.2 1 A Drain power dissipation (Tc = 25C) Pulse 5.45 0.2 4.8 MAX. Unit 2 3 2.8 Rating 0.3 0.6 0.1 Symbol 1.8 MAX. Characteristics 20.0 0.3 1.0 2.0 3.3 MAX. 9.0 2.0 Low drain-source ON-resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 4.5 3.2 0.2 15.9 MAX. * * * * 1. Gate 2. Drain(heat sink) 3. Source JEDEC JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.446 C/W Thermal resistance, channel to ambient Rth (ch-a) 50 C/W Note 1: Ensure that the channel temperature does not exceed 150C. 1 Note 2: VDD = 90 V, Tch = 25C (initial), L = 2.0 mH, RG = 25 , IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 Start of commercial production 2009-01 1 2013-11-01 TK20J50D Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 30 V, VDS = 0 V 1 A Drain cut-off current IDSS VDS = 500 V, VGS = 0 V 10 A V (BR) DSS ID = 10 mA, VGS = 0 V 500 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 10 A 0.22 0.27 Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 2.4 8.5 S Input capacitance Ciss 2600 Reverse transfer capacitance Crss 11 Output capacitance Coss 280 50 100 25 150 45 28 17 Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr Turn-on time ID = 10 A 10 V VGS 0V ton RL = 20 50 Switching time Fall time VOUT tf pF ns VDD 200 V Turn-off time toff Duty 1%, tw = 10 s Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD 400 V, VGS = 10 V, ID = 20 A nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR 20 A (Note 1) IDRP 80 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 20 A, VGS = 0 V -1.7 V Reverse recovery time trr IDR = 20 A, VGS = 0 V, 1700 ns Reverse recovery charge Qrr dIDR/dt = 100 A/s 26 C Marking Note 4: A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] TOSHIBA K20J50D Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 TK20J50D ID - VDS ID - VDS 50 20 10 7.5 Common source Tc = 25C Pulse Test 40 (A) 30 6.5 20 8 VGS = 6 V 4 0 0 2 4 6 Drain-source voltage 8 VDS 7.5 6.7 ID 12 Drain current ID Drain current 8 7 (A) 16 Common source 8 Tc = 25C 10 Pulse Test 7 6.5 10 0 0 10 (V) VGS = 6 V 10 20 Drain-source voltage ID - VGS 50 (V) VDS - VGS Common source Tc = 25C Pulse Test 8 VDS (V) Common source VDS = 20 V Pulse Test 30 Drain-source voltage ID (A) 40 Drain current VDS 10 50 20 25 100 10 Tc = -55 C 0 0 2 6 4 Gate-source voltage 8 VGS 6 ID = 20 A 4 10 2 0 0 10 (V) 5 4 8 Gate-source voltage |Yfs| - ID 10 Tc = -55 C 25 100 1 0.1 0.1 1 12 16 VGS 20 (V) RDS (ON) - ID 1 Common source VDS = 10 V Pulse Test Drain-source ON resistance RDS (ON) () 100 Forward transfer admittance Yfs (S) 40 30 10 VGS = 10, 15 V 0.1 0.1 100 Drain current ID (A) Common source TcTc= =25C 25 25C Pulse Test 1 10 100 Drain current ID (A) 3 2013-11-01 TK20J50D RDS (ON) - Tc IDR - VDS 100 Common source VGS = 10 V Pulse Test 0.6 20 10 0.4 ID = 5 A 0.2 Common source Tc = 25C Pulse Test 10 10 1 5 3 1 -40 0 40 80 120 0.1 0 160 -0.3 VGS = 0 V -0.6 -0.9 Drain-source voltage Case temperature Tc (C) -1.2 VDS 5 Common source VDS = 10 V ID = 1mA Pulse Test Vth (V) 1000 Coss Gate threshold voltage Capacitance C (pF) Ciss 100 Crss Common source VGS = 0 V f =1MHz Tc = 25C 1 0.1 1 10 Drain-source voltage 3 2 1 0 -80 100 VDS 4 -40 (V) 40 80 120 160 Dynamic input / output characteristics 500 (V) 400 20 VDS 400 200 VDS 300 Drain-source voltage Drain power dissipation PD (W) 0 Case temperature Tc (C) PD - Tc 200 100 0 0 (V) Vth - Tc Capacitance - VDS 10000 10 -1.5 VDD = 100 V 80 120 160 Case temperature Tc (C) 400 300 12 8 200 VGS 100 0 40 16 0 20 40 Common source ID = 20 A Tc = 25C Pulse Test 60 4 VGS (V) 0 -80 Gate-source voltage 0.8 Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) () 1 0 80 Total gate charge Qg (nC) 4 2013-11-01 TK20J50D Normalized transient thermal impedance rth (t)/Rth (ch-c) rth - tw 10 1 Duty=0.5 0.2 0.1 0.1 PDM SINGLE PULSE 0.05 t 0.02 T Duty = t/T Rth (ch-c) = 0.446 C/W 0.01 0.01 10 100 1m 10m Pulse width 100m tw EAS - Tch 500 ID max (pulse) * EAS (mJ) ID max (continuous) 1 ms * Avalanche energy Drain current ID (A) 100 s * 1 DC OPERATION Tc = 25C 0.1 400 300 200 100 0 25 0.01 Curves must be derated linearly with increase in temperature. 10 Drain-source voltage 50 75 100 125 Channel temperature (initial) * Single pulse Tc=25C 0.001 1 10 (s) SAFE OPERATING AREA 100 10 1 150 Tch (C) VDSS max 100 1000 15 V VDS (V) BVDSS IAR -15 V VDS VDD Test circuit RG = 25 VDD = 90 V, L = 2.0 mH 5 Wave form AS = 1 B VDSS L I2 B 2 - V VDSS DD 2013-11-01 TK20J50D RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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