IRF830 - Bay Linear, Inc. - Datasheet.Cloud

Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com

POWER MOSFET IRF830

Advance Information

Ordering Inform ation

Device Package Temp.

IRL830T TO-220

0 to 150°C

IRL830S TO-263 ( D2 ) 0 to 150°C

Absolute Maximum Rating

Parameter Max Unit

ID@ TC =25°

°°

°C Continuous Drain Cur rent, V GS @10V 4.5

ID@ TC =100°

°°

°C Continuous Drain Cur rent, V GS @10V 2.9

IDM Pulsed Drain Current (1) 18 A

PD @ TC =25°

°°

°C Power Dissipation 74 W

Linear Derating Factor 0.59

Linear Derating Factor ( PCB Mount, D2 ) (1) 0.025 W/°

°°

°C

VGS Gate-to- Source Voltage ±20 V

EAS Single Pulse Avalanche Energy (2) 280 mJ

IAR Avalanche Current (1) 4.5 A

EAR Repetitive Avalanche Energy (1) 7.4 mJ

dv/dt Peak Diode Recovery dv/dt (3) 3.5 V/ns

TJ, TSTG Junction & Storage Temperature Range −55 to +150

Soldering Temperature, for 10 seconds 300 (1.6mm from case) °

°°

°C

Thermal Resistance

Parameter Min Typ Max Units

Rθ

θθ

θJC Junction-to Case - - 1.7

Rθ

θθ

θCS Case-to-Sink, Flat, Greased Surface ( TO-220) - 0.50

Rθ

θθ

θJA Junction-to Ambient ( PCB Mount, D2 ) 40

Rθ

θθ

θJA Junction-to Ambient - - 62

°°

°C/W

Description

The Bay Linear MOSF ET’s provid e the designers with the best

combination of fast switching, ruggedized device design, low

0n-resist ance and low cost -effectiveness.

The TO-220 is offered in a 3-pin is universally preferred for all

commercial-industrial applications at power dissipation level

to approximately to 50 watts. Also, available in a D2 surface

mount power package with a power dissipation up to 2 Watts

Features

• Dynamic dv/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

VDSS = 500V

RDS (ON) = 1.5 Ω

ID = 4.5A

Bay Linear

Bay LinearBay Linear

Bay Linear

Linea r Exc e lle nc e

Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com

IRF830

Electrical Characteristics ( TC = 25°

°°

°C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Units

V(BR)DSS Drain-to-source Breakdown

Voltage VGS = 0V, ID = 250µA 500 V

V(BR)DSS /

∆

∆∆

∆TJ Breakdown Voltage

Temperature Coefficient Reference to 25°C,

ID = 1mA - 0.61 - V/°

°°

°C

ID(ON) On-State Drain Current

(note 2) VGS > ID(ON) x RDS(ON)Max 4.5

RDS(ON) Static Drain-to-Source

On-Resistance VGS =10V, ID = 2.7A

(note 4) 1.5

Ω

ΩΩ

Ω

VGS(TH) Gate Threshold Vo ltage VDS = VGS, ID = 250µA 2.0 - 4.0 V

gfs Forward Transconductance VDS = 50V, ID = 2.7A

2.5 - - S

VDS = 500V, VGS = 0V 25

IDSS Drain-to-Source Leakage

Current VDS = 400V, VGS = 0V,

TC= 125°C - -

250 µ

µµ

µA

Gate-to-Source Forward

Leakage VGS = 20V 100

IGSS Gate-to-Source Reverse

Leakage VG = -20V - -

-100

Qg Total Gate Charge ID =3.1A - - 38

Qqs Gate-to-Source Charge VDS = 400V - - 5.0

Qgd Gate-to-Drain (“Miller”)

Charge VGS = 10V (note 4) 22 nC

td ( on) Turn-On De lay Time - 8.2 -

Tr Rise Time - 16 -

td (off) Turn -O ff Delay Time - 42 -

Tf Fall Time

VDD = 250V

ID = 3.1.1A

RG = 12Ω

RD = 79Ω (note 4) - 16 -

LD Internal Drain Inductance - 4.5

LS Internal Source Inductance

Between lead 6mm (0.25in.)

from package and center or die

contact - 7.5 - nH

Ciss Input Capacitance - 610 -

Coss Output Capacitance - 160 -

Crss Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

F = 1.0MHZ - 68 - pF

Source-Drain Rating Characteristics

Symbol Parameter Conditions Min Typ Max Units

IS Continuous Sourc e Current

(Body Diode) - - 4.5

ISM Pulsed Source Current

(Body Diode) (Note 1)

MOSFET symbol showing the

integral reverse p-n junctio n

diode. - - 18 A

VSD Diode Forward Voltage (note 4) TJ=25°C, IS=2.5A,VGS=DV - - 1.6 V

trr Reverse Recovery Time - 320 640 ns

Qrr Reverse Recovery Charge TJ=25°C, IF=2.1A

di/dt=100A/µs (Note 4) - 1.0 2.0 µ

µµ

µC

ton Forward Turn-On Ti me Intrinsic turn-on time is negligible (turn-on is dominated by (LS+LD)

Notes: 1. Repetitive Rating; puls e width limited by max. junction temperature.

2. VDD = 50V , star ting Tj = 25 °C, L = 24 mH RG = 25Ω, IAS = 4.5A

3. ISD ≤ 4.5A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS, Tj ≤ 150°C

4. Pulse with ≤ 300µs; duty cycle ≤ 2%

Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com

Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,

computer simulations and/ or initial prototype evaluation.

Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are

subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.

The applicati on circuit examples ar e only to explain the representati ve applicatio ns of the devices and ar e not intended to guarantee any c ircuit

desi gn or permit any industrial prop erty right to other rights to execute. Bay Linear takes no responsibility for any prob lems related to any

industrial property right resulting from the use of th e conten ts shown in the data book. Typical parameters can and do vary in different

applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.

LIFE SUPPORT AND NUCLEAR POLICY

Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical

implants into the body to support or sustain life, in aircraft, space eq uipment, submarine, or nuclear facility applications without

the specific written consent of Bay Linear President.