MJD3055T4 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 



DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching applications.

•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (“–1” Suffix)

•Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)

•Electrically Similar to MJE2955 and MJE3055

•DC Current Gain Specified to 10 Amperes

•High Current Gain–Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

PD†

ÎÎÎÎÎ

0.16

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation (1) @ TA = 25

Derate above 25

ÎÎÎÎÎ

1.75

0.014

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

–55 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎ

6.25

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient (1)

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎ

71.4

ÎÎÎ

C/W

(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJD2955/D

 Motorola, Inc. 1995





CASE 369A–13

SILICON

POWER TRANSISTORS

10 AMPERES

60 VOLTS

20 WATTS

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8 0.165

4.191

0.190

4.826

inches





REV 1

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

0.02

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 70 Vdc, IE = 0)

(VCB = 70 Vdc, IE = 0, TC = 150

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.02

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 4 Adc, VCE = 4 Vdc)

(IC = 10 Adc, VCE = 4 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

100

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 4 Adc, IB = 0.4 Adc)

(IC = 10 Adc, IB = 3.3 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.1

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1)

(IC = 4 Adc, VCE = 4 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

 

Motorola Bipolar Power Transistor Device Data

V, VOLTAGE (VOLTS)

t, TIME ( s)

0.5

0.3

0.7

0.2

500

300

200

100

IC, COLLECTOR CURRENT (AMP)

0.5

0.3

IC, COLLECTOR CURRENT (AMP)

0.2

Figure 1. Power Derating

Figure 2. DC Current Gain

0.01 0.02 0.05 1 102 50.1

Figure 3. Turn–On Time

Figure 4. “On” Voltages, MJD3055

TJ = 25

TJ = 150

–55

0.7

0.2

IC, COLLECTOR CURRENT (AMP)

0.2 1 60.6 20.06 0.4 4

IC, COLLECTOR CURRENT (AMP)

0.1 0.2 0.3 1 102 50.5 3

Figure 5. Turn–Off Time

hFE, DC CURRENT GAIN

VCE = 2 V

50.5

T, TEMPERATURE (

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TATC

SURFACE

MOUNT

1.4

0.8

0.6

1.2

0.4

0.2

TJ = 25

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25

VCC = 30 V

IC/IB = 10

0.05

0.03

0.02

0.1

0.07

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 2 V

0.1

0.05

0.07

0.1

td @ VBE(off)

≈

5 V

0.2 1 60.6 20.06 0.4 40.1

t, TIME ( s)

TYPICAL CHARACTERISTICS

 

4 Motorola Bipolar Power Transistor Device Data

Figure 6. “On” Voltages, MJD2955

0.1

00.2 0.3 0.5 1 3 10

0.8

1.6

1.2

V, VOLTAGE (VOLTS)

0.4

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 3 V

Figure 7. Switching Time Test Ciruit

Figure 8. Thermal Response

t, TIME (ms)

0.01 0.02

0.7

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 500

JC(t) = r(t) R

JC = 6.25

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.1 0.50.2

RESISTANCE (NORMALIZED)

1 k

0.5

0.3

0.07

0.03

0.03 0.3 3 30 300

IC, COLLECTOR CURRENT (AMP)

+11 V 25

–9 V

–4 V

SCOPE

VCC

+30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1%

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.01

Figure 9. Maximum Forward Bias

Safe Operating Area

0.01

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.02

0.5

0.1

TJ = 150

1 ms

0.3

0.6 1 2 6020 40

IC, COLLECTOR CURRENT (AMP)

WIRE BOND LIMIT

THERMAL LIMIT TC = 25

C (D = 0.1)

SECOND BREAKDOWN LIMIT

1064

500

0.03

0.05

100

5 ms

FORWARD BIAS SAFE OPERATING AREA

INFORMATION

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 9 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in Fig-

ure 8. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

123

–T–

SEATING

PLANE

GD3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.175 0.215 4.45 5.46

S0.050 0.090 1.27 2.28

V0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2 PL

0.13 (0.005) T

–T–

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.180 BSC 4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

L0.090 BSC 2.29 BSC

R0.175 0.215 4.45 5.46

S0.020 0.050 0.51 1.27

U0.020 ––– 0.51 –––

V0.030 0.050 0.77 1.27

Z0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

 

6 Motorola Bipolar Power Transistor Device Data

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MJD2955/D

*MJD2955/D*

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