BFG540W/XT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Dec 04 2000 May 23

DISCRETE SEMICONDUCTORS

BFG540W

BFG540W/X; BFG540W/XR

NPN 9 GHz wideband transistor

2000 May 23 2

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

FEATURES

•High power gain

•Low noise figure

•High transition frequency

•Gold metallization ensures

excellent reliability.

APPLICATIONS

RFfrontendwidebandapplicationsin

the GHz range, such as analog and

digital cellular telephones, cordless

telephones (CT2, CT3, PCN, DECT,

etc.), radar detectors, pagers,

satellite television tuners (SATV),

MATV/CATV amplifiers and repeater

amplifiers in fibre-optic systems.

DESCRIPTION

NPN silicon planar epitaxial

transistors in 4-pin dual-emitter

SOT343N and SOT343R plastic

packages.

MARKING

PINNING

TYPE NUMBER CODE

BFG540W N9

BFG540W/X N7

BFG540W/XR N8

PIN DESCRIPTION

BFG540W (see Fig.1)

1 collector

2 base

3 emitter

4 emitter

BFG540W/X (see Fig.1)

1 collector

2 emitter

3 base

4 emitter

BFG540W/XR (see Fig.2)

1 collector

2 emitter

3 base

4 emitter

Fig.1 SOT343N.

page

Top view

MBK523

Fig.2 SOT343R.

lfpage

Top view

MSB842

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−20 V

VCES collector-emitter voltage RBE =0 −−15 V

ICcollector current (DC) −−120 mA

Ptot total power dissipation Ts≤85 °C−−500 mW

hFE DC current gain IC= 40 mA; VCE = 8 V 100 120 250

Cre feedback capacitance IC= 0; VCB = 8 V; f = 1 MHz −0.5 −pF

fTtransition frequency IC= 40 mA; VCE = 8 V; f = 1 GHz; Tamb =25°C−9−GHz

GUM maximum unilateral

power gain IC= 40 mA; VCE = 8 V; f = 900 MHz; Tamb =25°C−16 −dB

IC= 40 mA; VCE = 8 V; f = 2 GHz; Tamb =25°C10−dB

|s21|2insertion power gain IC= 40 mA; VCE = 8 V; f = 900 MHz; Tamb =25°C14 15 −dB

F noise ﬁgure Γs=Γ

opt; IC= 10 mA; VCE =8V; f=2GHz −2.1 −dB

2000 May 23 3

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCES collector-emitter voltage RBE =0 −15 V

VEBO emitter-base voltage open collector −2.5 V

ICcollector current (DC) −120 mA

Ptot total power dissipation Ts≤85 °C; see Fig.3; note 1 −500 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −175 °C

Fig.3 Power derating curve.

VCE ≤10 V.

handbook, halfpage

0 50 100 200

400

MBG248

150 T ( C)

Ptot

(mW)

600

200

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts≤85 °C; note 1 180 K/W

2000 May 23 4

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

2. IC= 40 mA; VCE =8V; R

L=50Ω; Tamb =25°C;

a) fp= 900 MHz; fq= 902 MHz; measured at f(2p −q) = 898 MHz and f(2q −p) = 904 MHz.

3. dim =−60 dB (DIN45004B); Vp=V

; Vq=V

o−6 dB; Vr=V

o−6 dB; RL=75Ω; VCE = 8 V; IC= 40 mA;

a) fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at f(p+q−r) = 793.25 MHz.

4. IC= 40 mA; VCE = 8 V; Vo= 275 mV; RL=75Ω; Tamb =25°C;

a) fp= 250 MHz; fq= 560 MHz; measured at f(p + q) = 810 MHz.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown

voltage open emitter; IC=10µA; I

E=0 20 −−V

(BR)CES collector-emitter breakdown

voltage RBE = 0; IC=40µA15−−V

(BR)EBO emitter-base breakdown

voltage open collector; IE= 100 µA; IC= 0 2.5 −−V

CBO collector cut-off current open emitter; VCB =8V; I

E=0 −−50 nA

hFE DC current gain IC= 40 mA; VCE = 8 V 100 120 250

fTtransition frequency IC= 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25°C−9−GHz

Cccollector capacitance IE=i

e= 0; VCB = 8 V; f = 1 MHz −0.9 −pF

Ceemitter capacitance IC=i

c= 0; VEB = 0.5 V; f = 1 MHz −2−pF

Cre feedback capacitance IC= 0; VCB = 8 V; f = 1 MHz −0.5 −pF

GUM maximumunilateralpowergain;

note 1 IC= 40 mA;VCE = 8 V;f = 900 MHz;

Tamb =25°C−16 −dB

IC= 40 mA; VCE = 8 V; f = 2 GHz;

Tamb =25°C−10 −dB

|s21|2insertion power gain IC= 40 mA;VCE = 8 V;f = 900 MHz;

Tamb =25°C14 15 −dB

F noise ﬁgure Γs=Γ

opt; IC= 10 mA; VCE =8V;

f = 900 MHz −1.3 1.8 dB

Γs=Γ

opt; IC= 40 mA; VCE =8V;

f = 900 MHz −1.9 2.4 dB

Γs=Γ

opt; IC= 10 mA; VCE =8V;

f = 2 GHz −2.1 −dB

PL1 output power at 1 dB gain

compression IC= 40 mA;VCE = 8 V;f = 900 MHz;

RL=50Ω; Tamb =25°C−21 −dBm

ITO third order intercept point note 2 −34 −dBm

Vooutput voltage note 3 −500 −mV

d2second order intermodulation

distortion note 4 −−50 −dB

GUM 10 s21 2

11 2

–()1s

22 2

–()

-------------------------------------------------------- dB.log=

2000 May 23 5

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

VCE =8V.

Fig.4 DC current gain as a function of

collector current; typical values.

handbook, halfpage

250

100

150

200

MRA749

−2

−1

11010

IC (mA)

IC= 0; f = 1 MHz.

Fig.5 Feedback capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

(pF)

VCB (V)

812

0.8

0.6

0.4

0.2

MRA750

Fig.6 Transition frequency as a function of

collector current; typical values.

f = 1 GHz; Tamb =25°C.

handbook, halfpage

MLC044

0110 1102

10 I (mA)

(GHz)

TV = 8 V

V = 4 V

2000 May 23 6

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

f = 900 MHz; VCE =8V.

Fig.7 Gain as a function of collector current;

typical values.

handbook, halfpage

050

MLC045

10 20 30 40

gain

(dB)

I (mA)

MSG

GUM

Gmax

f = 2 GHz; VCE =8V.

Fig.8 Gain as a function of collector current;

typical values.

handbook, halfpage

050

MLC046

10 20 30 40

gain

(dB)

I (mA)

GUM

Gmax

IC= 10 mA; VCE =8V.

Fig.9 Gain as a function of frequency; typical

values.

handbook, halfpage

010

MLC047

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

Fig.10 Gain as a function of frequency; typical

values.

IC= 40 mA; VCE =8V.

handbook, halfpage

010

MLC048

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

2000 May 23 7

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

Fig.11 Intermodulation distortion as a function of

collector current; typical values.

Vo= 500 mV; f(p+q−r) = 793.25 MHz; VCE = 8 V; Tamb =25°C;

RL=75Ω.

handbook, halfpage

10 60

−20

−70

−60

−50

−40

−30

20 30 40

dim

(dB)

IC (mA)

MEA973

Fig.12 Second order intermodulation distortion as

a function of collector current; typical

values.

Vo= 275 mV; f(p+q)= 810 MHz; VCE = 8 V; Tamb =25°C;

RL=75Ω.

handbook, halfpage

10 60

−20

−70

−60

−50

−40

−30

20 30 40

(dB)

IC (mA)

MEA972

Fig.13 Minimum noise figure as a function of

collector current; typical values.

VCE =8V.

handbook, halfpage

MLC049

(dB)

I (mA)

f = 2000 MHz

1000 MHz

900 MHz

500 MHz

110 102

Fig.14 Associated available gain as a function of

collector current; typical values.

VCE =8V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

IC (mA)

MRA760

1102

2000 MHz

1000 MHz

2000 MHz

1000 MHz

f = 900 MHz

Gass

Fmin

900 MHz

500 MHz

2000 May 23 8

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

Fig.15 Minimum noise figure as a function of

frequency; typical values.

VCE =8V.

handbook, halfpage

MLC050

(dB)

f (MHz) 104

103

102

I = 40 mA

10 mA

Fig.16 Associated available gain as a function of

frequency; typical values.

VCE =8V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

f (MHz)

MRA761

Gass

10 mA Fmin

40 mA

IC = 10 mA

2000 May 23 9

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

handbook, full pagewidth

MLC051

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

135o

0.5

0.2

0.5

F = 3 dB

F = 2 dB

F = 1.5 dB

opt

F = 1.3 dB

min

stability

circle

unstable

region

180

0.2

50.2 0.5 2

90o

Fig.17 Common emitter noise figure circles; typical values.

f = 900 MHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.

handbook, full pagewidth

MLC052

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

F = 4 dB

opt

0.2

180 0

0.2

0.2 0.5 1

G = 9 dB G = 8 dB

G = 9.8 dB

max

F = 2.1 dB

min

F = 1.5 dB

F = 3 dB

Fig.18 Common emitter noise figure circles; typical values.

f = 2 GHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.

2000 May 23 10

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

handbook, full pagewidth

MLC053

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

0.2

0.5

0.2

180 0.2 1

00.5

40 MHz

3 GHz

VCE = 8 V; IC= 40 mA; Zo=50Ω.

Fig.19 Common emitter input reflection coefficient (s11); typical values.

VCE = 8 V; IC=40mA.

Fig.20 Common emitter forward transmission coefficient (s21); typical values.

handbook, full pagewidth

MLC054

90o

135o

180o

90o

50 40 30 20 10

45o

135o45o

40 MHz

3 GHz

2000 May 23 11

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

VCE = 8 V; IC=40mA.

Fig.21 Common emitter reverse transmission coefficient (s12); typical values.

handbook, full pagewidth

MLC055

90o

135o

180o

90o

0.25 0.20 0.15 0.10 0.05

45o

135o45o

40 MHz

3 GHz

VCE = 8 V; IC=40mA;Z

o=50Ω.

Fig.22 Common emitter output reflection coefficient (s22); typical values.

handbook, full pagewidth

MLC056

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 2

40 MHz

3 GHz

0.2

1 5

2000 May 23 12

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

SPICE parameters for the BFG540W crystal

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.045 fA

2 BF 184.3 −

3 NF 0.981 −

4 VAF 41.69 V

5 IKF 10.00 A

6 ISE 232.4 fA

7 NE 2.028 −

8 BR 43.99 −

9 NR 0.992 −

10 VAR 2.097 V

11 IKR 166.2 mA

12 ISC 129.8 aA

13 NC 1.064 −

14 RB 5.000 Ω

15 IRB 1.000 µA

16 RBM 5.000 Ω

17 RE 353.5 mΩ

18 RC 1.340 Ω

19 (1) XTB 0.000 −

20 (1) EG 1.110 eV

21 (1) XTI 3.000 −

22 CJE 1.978 pF

23 VJE 600.0 mV

24 MJE 0.332 −

25 TF 7.457 ps

26 XTF 11.40 −

27 VTF 3.158 V

28 ITF 156.9 mA

29 PTF 0.000 deg

30 CJC 793.7 fF

31 VJC 185.5 mV

32 MJC 0.084 −

33 XCJC 0.150 −

34 TR 1.598 ns

35 (1) CJS 0.000 F

Note

1. These parameters have not been extracted, the

default values are shown.

List of components (see Fig.23).

36 (1) VJS 750.0 mV

37 (1) MJS 0.000 −

38 FC 0.814 −

DESIGNATION VALUE UNIT

Cbe 70 fF

Ccb 50 fF

Cce 115 fF

L1 0.34 nH

L2 0.10 nH

L3 0.25 nH

LB0.40 nH

LE0.40 nH

SEQUENCE No. PARAMETER VALUE UNIT

QLB= 50; QLE= 50; QLB,E(f) = QLB,E√(f/fc)

fc= scaling frequency = 1 GHz.

Fig.23 Package equivalent circuit SOT343N;

SOT343R.

handbook, halfpage

MBC964

CB' C'

L1 L2

Ccb

Cbe ce

2000 May 23 13

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

PACKAGE OUTLINES

UNIT A1

max bpcD E

pQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10

0.7

0.5 2.2

1.8 1.35

1.15

2.2

2.0

1.3

0.2

0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

SOT343N

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 4 leads SOT343N

wMB

97-05-21

2000 May 23 14

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT343R

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; reverse pinning; 4 leads SOT343R

wMB

97-05-21

UNIT A1

max bpcD E

pQwv

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10

0.7

0.5 2.2

1.8 1.35

1.15

2.2

2.0

1.3

0.2

0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

2000 May 23 15

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540W

BFG540W/X; BFG540W/XR

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS PRODUCT

STATUS DEFINITIONS (1)

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

product development. Speciﬁcation may change in any manner without

notice.

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseorat any other conditionsabovethosegiven in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofanyoftheseproducts,conveysnolicenceortitle

under any patent, copyright, or mask work right to these

products,andmakes no representationsorwarranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

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Internet: http://www.semiconductors.philips.com

2000 69

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Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2741 Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,

ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 3341 299, Fax.+381 11 3342 553

Printed in The Netherlands 613516/04/pp16 Date of release: 2000 May 23 Document order number: 9397 750 07061