TEXAS INSTR COPTO} b2 dE Basvizee ooze7E0 3 _ 8961726 TEXAS INSTR COPTOD 6iC 36760 DY te - TIP 31, TIP31A, TIP31B, TIP31C, _ TIP31D, TIP31E, TIP31F N-P-N SILICON POWER TRANSISTORS DECEMBER 1970 REVISED OCTOBER 1984 40 W at 25C Case Temperature T- 33-4 3 A Continuous Collector Current 5 A Peak Collector Current Minimum fT of 3 MHz at 10 V, 0.5 mA Customer-Specified Selections Available device schematic TO-220AB PACKAGE c J a1 t EMITTER l COLLECTOR 1 BASE ! i j | 1 ~- - E THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) TIP31 TIP31A TIP318 TIP31C current current current area at case temperature at case temperature {see Note 2) at temperature (see Note 3) energy storage temperature range temperature mm case NOTES: 1. This value applies for ty < 0.3 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 0.32 W/C. 3. Derate linearly to 150C free-air temperature at the rate of 16 mW/C, 4, This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2. @ 2 ? o a a - 1283 . TEXAS wy INSTRUMENTS | . POST OFFICE BOX 225012 DALLAS, TEXAS 75265 5-19TEXAS INSTR {OPTOF be DE Pfaseiza. OO3b7b1 5 i ( S9G1726 TEXAS INSTR COPTOD 62C 36761 OD TIP31, TIP31A, TIP31B, TIP31C, T-33-// TIP31D, TIP31E, TIP31F N-P-N SILICON POWER TRANSISTORS absolute maximum ratings at 25C case temperature (unless otherwise noted} TiP31D TIP31E TIP31F current current current area at Case temperature at case temperature at temperature energy storage temperature range temperature mm case NOTES: 1. This value applies for tw < 0.3 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 0.32 W/C. 3. Derate linearly to 180C free-air temperature at the rate of 16 mW/C. 4 This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2. electrical characteristics at 25C case temperature (untess otherwise noted) PARAMETER TEST CONDITIONS TIPSt TIPS1A TIPS18 TP3tC st unir MIN TYP MAX | MIN TYP MAX | MIN TYP MAX | MIN TYP MAX V(BRICEO IC = 30mA, ig = 0, 40 60 80 100 v See Note VceE = 30V, ip=0 0.3 0.3 1 A CEO Vce= 60V, Ip=O 0.3 oa | Vce = 80V, Vee = 0 0.2 Voce = 100V, Vgp=0 0.2 | mA ces Vce = 120V, Vpep =0 0.2 VoeE= 140V, Ver =0 0.2 feBo Veg = 5V, ic = 0 1 1 1 1 mA _ Vce = 4V, lc = 1A, 5 2: 2 hee See Notes 5 and 6 2 28 5 5 Voe=4V, Ic = 3A, | 45 50 | 10 so | 10 50 | 10 50 See Notes 5 and 6 = Voce =4V Ic =3A = Vv . 1.8 1.8 1.8 1.8 v . ~ BE Sea Notes 5 and 6 Ig = 3875mA, IC =3A, 1.2 1 1,2 1.2 v 9 VCE(sat) See Notes 5 and 6 2 < VcE=10V, Ic =0.5A, = 2 5 hte fo tkHe 20. 20 20 0 Vce=10V, ic=0.5A o hi CE = c= 0.54, 3 3 fe f= 1MHz 3 3 NOTES: 5. These parameters must be measured using pulse techniques, ty, = 300us, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. t | Ri i 12 5-20 83 TEXAS INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265TEXAS INSTR LOPTO} b2 DE Bfate1726 ooae7ee 7 een a ne 3561726 TEXAS INSTR COPTO) ez 36762 ~~ 2 wate ot - Cee, TIP31, TIP31A, TIP31B, TIP31C, TIP31D, TIP31E, TIP31F N-P-N SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) 7 -33- / PARAMETER TEST CONDITIONS TIP31D TIPSIE TIPSIE UNIT MIN TYP MAX | MIN TYP MAX | MIN TYP_MAX V(BRICEO Ic = 30mA, Ip = 0, 120 140 +60 v See Note 5 ICEO Vce = SOV, ip =O 0.3 0.3 0.3 | mA Vce= 160V, Vae=0 0.2 Ices VceE=180V Vae=0 0.2 mA Vce = 200V, VaE=0 0.2 lEB0 Veg = SV, Ip = 0 1 1 1 mA Voce = 4V, Ic = 1A, h See Notes 5 and6 25 26 25 FE Vop=4V,. Ic=3A, 5 5 5 See Notes 5 and 6 VcE=4V. Ic = 3A, VBE See Notes 5and6 18 18 18 v iIp=750mA, Ic = 3A, ~ VcE 2.5 2.5 25] V CE (sat) See Notes 5and6 Voge = 10V, I = 0.5A, h 2 20 fe f = 1kHz 0 20 Voce = 10V, Io = 0.54, h fe f = 1MHz 3 3 3 NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 ps, duty cycle < 2%. 6. These parametets are measured using voltage-sensing contacts separate from the current-carrying contacts. thermal characteristics PARAMETER MIN TYP MAX [ UNIT Rosc 3.125 |, : Resa oe] : resistive-load switching characteristic at 25C case temperature (unless otherwise noted) PARAMETER . TEST CONDITIONS! . MIN TYP MAX | UNIT ton Ic = 14, {py = G.1A, {p2 = 0.1A, 0.5 toff VeEloff) = 4.3V, Ai = 302, See Figure 1 2 H t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. o : 2 > a a - | 1 1288 TEXAS we 6-21 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265TEXAS INSTR fOPTOF be DE Pacci72, 0036763 4 a La { SOSIABG dIL ie D oO 2C 36763 BS61726 TEXAS INSTR COPTO) Ske 6 3 P31, TIP31A, TIP31B, TIP31C, T-33-/) TIP31D, TIP31E, TIP31F N-P-N SILICON POWER TRANSISTORS i hoy . PARAMETER MEASUREMENT INFORMATION ED MONITOR ouTeUT +q MONITOR 1NQ14 ANA 4 2N5385 862 1N914 1N914 = -1N914 } - = t wae Rap2 =56 2 RL =302 uU Vgen 202 Vep2=4.1V = Ves = 1O0V Vee =30V ADJUST FOR Von =8.6 VAT INPUT MONITOR TEST CIRCUIT Von = 8.5 V ~ dog INPUT =oV~J MONITOR ~4.3V 104 OUTPUT MONITOR VOLTAGE WAVEFORMS NOTES: @> Vgen is a 30-V pulse into a 60 Q termination. - - The Vgen waveform is supplied by the following characteristics: t< 162s, te< 15 ns, Zout = duty cycle < 2%, . Waveforms are monitored on an oscilloscope with the following characteristics: t; < 15 ns, Rin > 10 MQ, Cin < 11.5 0F. Resistors must be noninductive types. : . The d-c power supplies may require additional bypassing in order to minimize ringing. 609, ty = 20ys, moo FIGURE 1. RESISTIVE-LOAD SWITCHING we TEXAS INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS. TEXAS 75265 5-22TEXAS INSTR {fOPTO} be De Bf sse1726 o034764 o 5 RR ele 8961726 TEXAS INSTR COPTO) 62C 35764 TIP31, TIP31A, TIP31B, TIP31C, TIP31D, TIP31E, TIP31F N-P-N SILICON POWER TRANSISTORS INPUT $ s0ag PARAMETER MEASUREMENT INFORMATION Voce MONITOR T33-/) u1 (See Note A) 2N5385 TUT L2 {See Note A) 202 + = Vee = 10 V = Rep2 = 1002 Ig MONITOR Vep2=0 R,= 0.10 Vee1 = 10 V = TEST CIRCUIT tw 4ms 7 F (See Note B) 0 INPUT VOLTAGE BV == | 18A me COLLECTOR CURRENT 0 ViBRICER COLLECTOR VOLTAGE 10V VOLTAGE AND CURRENT WAVEFORMS NOTES: A. L1andL2 are 10 mH, 0.11 &, Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input pulse duration is increased untilicy = 1.8 A. 1283 FIGURE 2. INDUCTIVE-LOAD SWITCHING TEXAS wy 5-23 INSTRUMENTS POST OF FICE BOX 225012 @ DALLAS, TEXAS 75265 D o > a . a o. -TEXAS INSTR LOPTO} be DE Pjacu172 OO3b765 2 7 | ~ 8861726 TEXAS INSTR COPTO) "62 36765 =D | TIP31, TIP31A, TIP31B, TIP31C, T-33-() | TIP31D, TIP31E, TIP31F . N-P-N SILICON POWER TRANSISTORS - a TYPICAL CHARACTERISTICS vo _ ___ STATIC FORWARD CURRENT TRANSFER RATIO COLLECTOR CURRENT 1k Vce=4V 400 F Te = 28C F See Notes 5 and 6 100 40 10 hreStatic Forward Current Transfer Ratio 1 0.004 0.01 0.1 1 10 IcCollector Currant-A FIGURE 3 NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 ys, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. ! MAXIMUM SAFE OPERATING AREA 100 = us,d =0.1=1 40 =1ms, d=0.1= 10% ty = 10 ms, d= 0.1 = 10% < 10 Operation, See Note 7 a = E 7 0 5 1 o g 2 04 1 =e 38 TIP31A 8 4 TIP31B a = 01 TIP31C 0.04 TIP31D P31E TIP31F 0.01 1 4 10 40 100 400 1k VeeECollector-Emitter VoltageV FIGURE 4 NOTE 7: This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff witha clamped inductive toad. i . 524 s. TEXAS ap 1283 5-2 INSTRUMENTS POST OF FICE 8OX 225012 DALLAS, TEXAS 75265 i . <_==TEXAS INSTR LOPTO} b2 DEB) sae1726 0036766 4 i re 8861726 TEXAS INSTR COPTO) 620 35766 ai | TIPS4, TIP31A, TIP31B, TIP31C, ___ TIP31D, TIP31E, TIP31F NPA SILICON POWER TRANSISTORS oom ~ THERMALINFORMATION ~~ . T- 33-] ] DISSIPATION DERATING CURVE 8 .8 .8 g -_ - PyMaximum Continuous Device DissipationW o 0 3 50 75 100 6125S 150 TcCase TemperatureC FIGURE 5 TIP Devices i TEXAS % 5-25 INSTRUMENTS POST OFFICE BOX 228012 @ DALLAS. TEXAS 75265 ' .