+150
NPN Plastic-Encapsulate Transistor
BCX56=BH , BCX56-10=BK , BCX56-16=BL
Device Marking
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
TJ
PDmW
˚C
500
BCX56
˚C
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
1/3 15-Feb-06
MAXIMUM RATINGS ( TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Rating
Characteristics
Symbol
Symbol
Value
Min Max
Unit
Unit
A
V
V
V
IC
VEBO
VCBO
VCEO
1.0
5.0
100
80
µA
µA
V
V
V
IEBO
Emitter Cut-off Current, VEB = 5.0V, IC = 0
0.1-
ICBO
Collector Cut-off Current, VCB = 30V, IE = 0
0.1-
V(BR)EBO
Emitter-Base Breakdown Voltage, IE = 10µA, IC = 0
5.0-
V(BR)CEO
Collector-Emitter Breakdown Voltage, IC = 10mA, IB = 0
80-
V(BR)CBO
Collector-Base Breakdown Voltage, IC = 100µA, IE = 0
100-
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Storage Temperature Range
Junction Temperature Range
Tstg -55 to +150
Total Device Dissipation TA=25°C