Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page MCT6, MCT61, MCT62, MCT66 OPTICALLY COUPLED ISOLATORS Circuit Features 2500 V Isolation. Choice Of 4 Current Transfer Ratios. Low Cost Dual-In-Line Package. Two Packages Fit Into a 16 Lead DIP Socket. Description The MCT6, MCT62, MCT61 and MCT66 optoisolators have two channels for high density applications. For four channel applications, two-packages fit into a standard 16 pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. Surface Mount Option Available. All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL. Absolute Maximum Ratings (Ta=25C) Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Voltage: -55C to +150C -55C to +100C 250C for 10s, 1.6mm from case 2500Vdc (note 1) Input Diode (each channel) Forward DC Current: Reverse DC Voltage: Peak Forward Current: Power Dissipation: Derate Linearly: 60mA 3V 3A (1s pulse, 300pps) 100mW 1.33mW/C above 25C Output Transistor Collector Current: Power Dissipation: Derate Linearly: 30mA 150mW 2.00mW/C above 25C Coupled Input to Output breakdown Voltage: 2500Vrms Total Package Power Dissipation: 400mW Derate Linearly: 5.33mW/C above 25C Electro-optical Characteristics (Ta=25C) INPUT DIODE PARAMETER CONDITIONS VF Rated Forward Voltage IF=20mA VR Forward Current IR=10A IR Reverse Current CJ Junction Capacitance MIN TYP MAX UNIT 1.25 1.5 V 25 V VR=3.0V 0.001 10 A VF=0V 50 pF 3 OUTPUT TRANSISTOR (IF=0) BVCEO Collector-Emitter Voltage IC=1mA 30 35 V BVECO Emitter-Collector Voltage IE=100A 6 13 V ICEO Leakage Current, Collector-Emitter VCE=10V 5 CCE Capacitance Collector-Emitter VCE=0V 8 100 nA pF COUPLED DC Current Transfer Ratio MCT6 IC/IF MCT66 VCE=10V, IF=10mA 20 % 6 % MCT61 MCT62 VCE=5V, IF=5mA 50 % 100 % Collector-Emitter Saturation Voltage VCE(SAT) MCT6, 61, 62 IC=2mA, IF=16mA 0.2 0.4 V MCT66 IC=2mA, IF=40mA 0.2 0.4 V Non-saturated rise time, fall time IC=2mA, VCE=10V, 2.4 s (Note 2) RL=100ohm Non-saturated rise time, fall time IC=2mA, VCE=10V, 15 s (Note 2) RL=1kohm Saturated turn-on time(5V - 0.8V) RL=2kohm, IF=40mA 5 s Saturated turn-off time (from saturation to RL=2kohm, IF=40mA 2.0V) 25 s Bandwidth 150 kHz SWITCHING TIMES BW IC=2mA, VCC=10V, RL=100ohm ISOLATION CHARACRERISTICS BVI-O Isolation Voltage t=1 min 2500 VRMS RI-O Isolation Resistance, MCT6X VI-O=500Vdc 1E11 ohm Breakdown Voltage channel-to-channel MCT6X Relative Humidity=40%, f=1MHz Capacitance between channels 500 VDC 0.4 pF Notes 1. 2. The frequency at which ICis 3dB down from the 1kHz value. Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website. Visit File Lists to confirm old printouts are up-to-date. Contents