© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES T
C = 25°C to 150°C 600 V
VCGR T
J = 25°C to 150°C, RGE = 1MΩ 600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 T
C = 25°C 60 A
IC110 T
C = 110°C 30 A
IF110 T
C = 110°C 13 A
ICM T
C = 25°C, 1ms 150 A
SSOA V
GE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 A
(RBSOA) Clamped Inductive Load @ ≤ VCES
PC T
C = 25°C 220 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL 1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
Md Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
DS100142B(05/11)
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V
ICES VCE = VCES, VGE = 0V 25 μA
TJ = 125°C 300 μA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 20A, VGE = 15V, Note 1 2.6 3.0 V
TJ = 125°C 1.8 V
VCES = 600V
IC110 = 30A
VCE(sat) ≤ ≤
≤ ≤
≤ 3.0V
tfi(typ) = 47ns
High-Speed PT IGBTs for
40 - 100kHz Switching
Features
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Schottky Diode
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
GenX3TM 600V IGBTs
w/ SiC Anti-Parallel
Diode
G = Gate D = Collector
S = Emitter Tab = Collector
TO-247 (IXGH)
G
E
C C (Tab)
TO-263 AA (IXGA)
G
E
C (Tab)
G C E
TO-220AB (IXGP)
C (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 20A, VCE = 10V, Note 1 9 16 S
Cies 1075 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 196 pF
Cres 29 pF
Qg 38 nC
Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES 8 nC
Qgc 17 nC
td(on) 17 ns
tri 20 ns
Eon 0.12 mJ
td(off) 42 75 ns
tfi 47 ns
Eoff 0.09 0.18 mJ
td(on) 16 ns
tri 21 ns
Eon 0.16 mJ
td(off) 70 ns
tfi 90 ns
Eoff 0.33 mJ
RthJC 0.56 °C/W
RthCS TO-220 0.50 °C/W
TO-247 0.21 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
Notes
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
Reverse Diode (SiC)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 10A, VGE = 0V, Note 1 1.65 2.10 V
TJ = 125°C 1.80 V
RthJC 1.10 °C/W
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Pins: 1 - Gate 2, 4 - Collector
3 - Emitter
TO-220 (IXGP) Outline
TO-263 (IXGA) Outline
e
∅ P
TO-247 Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
Pins: 1 - Gate 2 - Collector
3 - Emitter
Pins:
1 - Gate
2, 4 - Collector
3 - Emitter
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fi g . 1. Ou tp u t Char ac ter i sti cs @ TJ = 25ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
VCE - Volts
IC - Amperes
V
GE
= 15
V
13
V
7V
9V
11V
Fig. 2. Extended Output Characteristics @ TJ = 25º C
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
VCE - Volts
IC
-
Amperes
V
GE
= 15V
7V
9V
11V
13V
Fi g . 3. Output Charact er i sti cs @ TJ = 125ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VCE - Volts
IC - Amperes
V
GE
= 15
V
13
V
11
V
7V
9V
Fig. 4. Dependence of VCE(sat) on
Junction T emperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
25 50 75 100 125 150
TJ - Degrees Centigrade
VCE(sat) - Normalized
V
GE
= 15V
I
C
= 40A
I
C
= 20A
I
C
= 10A
Fi g . 5. Co llecto r -to-Emitter V o l tag e
vs. Gate- to -Emi tter Vol ta g e
2.5
3.0
3.5
4.0
4.5
5.0
5.5
7 8 9 101112131415
VGE - Volts
VCE - Volts
I
C
= 40
A
T
J
= 25ºC
10
A
20
A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11
VGE - Volts
IC
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fig. 11. Maximum Transient Thermal Impedance for IGBT
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Tr ansco nductance
0
4
8
12
16
20
24
0 1020304050607080
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R ever se-B ias Safe Op er ati n g Area
0
10
20
30
40
50
60
70
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 20A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fi g . 12 . I n d ucti ve Swi tch i n g En e rg y L o ss vs.
Gate R esistan ce
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
4 6 8 101214161820
R
G
- Ohms
E
off
- MilliJoules
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
20
30
40
50
60
70
80
90
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
I
C
= 40A, 20A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Re si stan ce
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t
f i
- Nanoseconds
40
60
80
100
120
140
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fi g . 13. I n d u ct i ve Swi tch i n g En ergy L o s s vs.
Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
10 15 20 25 30 35 40
I
C
- Amperes
E
off
- MilliJoules
0
0.1
0.2
0.3
0.4
0.5
0.6
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junctio n Temper atur e
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 16. Inducti ve Tur n-off Sw i tching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
10 15 20 25 30 35 40
I
C
- Amperes
t
f i
- Nanoseconds
20
30
40
50
60
70
80
90
100
110
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
IXYS REF: G_30N60C3C1(4D)05-02-11-A
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
10 15 20 25 30 35 40
I
C
- Amperes
t
r i - Nanoseconds
12
14
16
18
20
22
24
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V T
J
= 125ºC
T
J
= 25ºC
Fi g . 20. Indu c ti ve Tur n -o n Swi tch i n g Times vs.
Junction T em p erature
15
25
35
45
55
65
75
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
15
16
17
18
19
20
21
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
I
C
= 20A
I
C
= 40A
Fig. 18. Inductive T urn-on Switching T imes vs.
Gate Resistance
10
20
30
40
50
60
70
80
90
4 6 8 101214161820
R
G
- Ohms
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
30
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 300V
I
C
= 20A
I
C
= 40A
Fig. 21. Forward Current vs. Forward Voltage
0
4
8
12
16
20
00.511.522.53
V
F
- Volts
I
F
- Amperes
T
J
= 25ºC
T
J
= 125ºC
Fi g . 22. Maximum Tr an s i en t Ther mal I mp ed an ce f o r D iod e
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
