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DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 19 2004 Feb 06
DISCRETE SEMICONDUCTORS
BCW69; BCW70
PNP general purpose transistors
2004 Feb 06 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BCW69; BCW70
FEATURES
Low current (ma x. 10 0 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switc hing and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW71 and BCW72.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BCW69 H1*
BCW70 H2*
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM256
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BCW69 plastic surface mounted package; 3 leads SOT23
BCW70
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCEO collector-emitter voltage open base; IC = 2 mA 45 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
2004 Feb 06 3
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BCW69; BCW70
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 20 V −−−100 nA
IE = 0; VCB = 20 V; Tj = 100 °C−−−10 μA
IEBO emitter cu t-off current IC = 0; VEB = 5 V −−−100 nA
hFE DC current gain IC = 10 μA; VCE = 5 V
BCW69 90
BCW70 150
DC current gain IC = 2 mA; VCE = 5 V
BCW69 120 260
BCW70 215 500
VCEsat collector-emitter saturation
voltage IC = 10 mA; IB = 0.5 mA 80 300 mV
IC = 50 mA; IB = 2.5 mA; note 1 150 mV
VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA 720 mV
IC = 50 mA; IB = 2.5 mA; note 1 810 mV
VBE base-emitter voltage IC = 2 mA; VCE = 5 V 600 750 mV
Cccollector capacitan ce IE = Ie = 0; VCB = 10 V;
f = 1 MHz 4.5 pF
fTtransition frequency IC = 10 mA; VCE = 5 V;
f = 100 MHz 100 −−MHz
Fnoise figure IC = 200 μA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz −−10 dB
2004 Feb 06 4
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BCW69; BCW70
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Feb 06 5
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BCW69; BCW70
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp6 Date of release: 2004 Feb 06 Document orde r number: 9397 750 12405