2N1893
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N1893J)
• JANTX level (2N1893JX)
• JANTXV level (2N1893JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-5 metal can
• Also available in chip configuration
• Chip geometry 4500
• Reference document:
MIL-PRF-19500/182
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 80 Volts
Collector-Base Voltage VCBO 120 Volts
Emitter-Base Voltage VEBO 7 Volts
Collector Current, Continuous IC 500 mA
Power Dissipation, TA = 25OC
Derate above 60OC PT 0.8
5.7
W
mW/°C
Power Dissipation, TC = 25OC
Derate above 25OC PT 3.0
17.2
W
mW/°C
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Thermal Resistance RθJA 175 °C/W
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N1893
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 30 mA 80 Volts
Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 mA, RBE = 10 Ω 100 Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 120 Volts
VCB = 90 Volts
VCE = 90 Volts, TA = 150 OC
100
10
15
µA
nA
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 7 Volts
VEB = 5 Volts 100
10
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 1 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts,
TA = -55 OC
20
35
40
20
120
Base-Emitter Saturation Voltage VBEsat I
C = 150 mA, IB = 15 mA 1.3 Volts
Collector-Emitter Saturation Voltage VCEsat I
C = 150 mA, IB = 15 mA 5.0 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 50 mA,
f = 20 MHz 3
10
Short Circuit Forward Current Transfer
Ratio
hFE1
hFE2
f = 1 kHz
VCE = 5 Volts, IC = 1 mA
VCE = 10 Volts, IC = 5 mA
35
45
100
150
Short Circuit Input Impedance hie V
CB = 10V, IC = 5mA 4 8 Ω
Open Circuit Output Admittance hoe V
CB = 10V, IC = 5mA 0.5 µΩ
Open Circuit reverse Voltage Transfer
Ratio hre V
CB = 10V, IC = 5mA 1.5x10-4
Open Circuit Output Capacitance COBO VCB = 10 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 2
15 pF
Switching Characteristics
Pulse Response ton + toff 30 ns
