1
Radiation Hardened Quad Differential Line Receivers
HS-26CT32RH, HS-26CT32EH
The Intersil HS-26CT32RH, HS-26CT32EH are differential line
receivers designed for digital data transmission over balanced
lines and meets the requirements of EIA standard RS-422.
Radiation hardened CMOS processing assures low power
consumption, high speed, and reliable operation in the most
severe radiation environments.
The HS-26CT32RH, HS-26CT32EH have an input sensitivity
typically of 200mV over the common mode input voltage
range of ±7V. The receivers are also equipped with input fail
safe circuitry, which causes the outputs to go to a logic “1”
when the inputs are open. Enable and Disable functions are
common to all four receivers.
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed in the “Ordering Information” must be used
when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95631. A “hot-link” is also provided on
our homepage for downloading.
Features
Electrically Screened to SMD # 5962-95631
QML Qualified per MIL-PRF-38535 Requirements
1.2 Micron Radiation Hardened CMOS
- Total Dose . . . . . . . . . . . . . . . . . . . . . . . Up to 300kRAD(Si)
•Latch-up Free
EIA RS-422 Compatible Outputs
Operation with TTL Based on VIH = VDD/2
Input Fail Safe Circuitry
High Impedance Inputs when Disabled or Powered Down
Low Power Dissipation Standby (Max) . . . . . . . . . . . .138mW
Single 5V Supply
Full Military Temperature Range . . . . . . . . -55°C to +125°C
Applications
Line Receiver for MIL-STD-1553 Serial Data Bus
Line Receiver for RS422
Logic Diagram
ENABLE ENABLE
AOUTBOUTCOUT
DIN
DOUT
DIN CIN CIN BIN BIN AIN AIN
+-+-+-+-
Ordering Information
ORDERING NUMBER INTERNAL MKT. NUMBER PART MARKING
TEMP. RANGE
(°C) PACKAGE PKG. DWG. #
5962F9563101QEC HS1-26CT32RH-8 Q 5962F95 63101QEC -55 to +125 16 Ld SBDIP D16.3
5962F9563101QXC HS9-26CT32RH-8 Q 5962F95 63101QXC -55 to +125 16 Ld Flatpack K16.A
5962F9563101V9A HS0-26CT32RH-Q -55 to +125 Die
5962F9563101VEC HS1-26CT32RH-Q Q 5962F95 63101VEC -55 to +125 16 Ld SBDIP D16.3
5962F9563101VXC HS9-26CT32RH-Q Q 5962F95 63101VXC -55 to +125 16 Ld Flatpack K16.A
5962F9563102VXC HS9-26CT32EH-Q Q 5962F95 63102VXC -55 to +125 16 Ld Flatpack K16.A
HS1-26CT32RH/PROTO HS1-26CT32RH/PROTO HS1- 26CT32RH /PROTO -55 to +125 16 Ld SBDIP D16.3
HS9-26CT32RH/PROTO HS9-26CT32RH/PROTO HS9- 26CT32RH /PROTO -55 to +125 16 Ld Flatpack K16.A
5962F9563102VEC HS1-26CT32EH-Q Q 5962F95 63102VEC -55 to +125 16 Ld SBDIP D16.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2000, 2008, 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
September 25, 2012
FN2930.5
HS-26CT32RH, HS-26CT32EH
2
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN2930.5
September 25, 2012
For additional products, see www.intersil.com/product_tree
5962F9563102VXC HS9-26CT32EH-Q Q 5962F95 63102VXC -55 to +125 16 Ld Flatpack K16.A
5962F9563102V9A HS0-26CT32EH-Q -55 to +125 Die
Ordering Information (Continued)
ORDERING NUMBER INTERNAL MKT. NUMBER PART MARKING
TEMP. RANGE
(°C) PACKAGE PKG. DWG. #
Pin Configurations
HS1-26CT32RH
(16 LD SBDIP, CDIP2-T16)
TOP VIEW
HS9-26CT32RH, HS9-26CT32EH
(16 LD FLATPACK, CDFP4-F16)
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
AIN
AIN
AOUT
ENABLE
COUT
CIN
GND
CIN
VDD
BIN
BOUT
ENABLE
DOUT
DIN
DIN
BIN
AIN
AIN
AOUT
ENABLE
COUT
CIN
CIN
GND
2
3
4
5
6
7
8
116
15
14
13
12
11
10
9
VDD
BIN
BIN
BOUT
ENABLE
DOUT
DIN
DIN
HS-26CT32RH, HS-26CT32EH
3FN2930.5
September 25, 2012
Die Characteristics
DIE DIMENSIONS:
78 mils x 123 mils
(1970µm x 3120µm)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 10kÅ ±1kÅ
Top Metallization:
M1: Mo/Tiw
Thickness: 5800Å
M2: Al/Si/Cu
Thickness: 10kÅ ±1kÅ
Substrate:
AVLSI1RA
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
VDD (When Powered Up)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105A/cm2
Transistor Count:
240
Bond Pad Size:
110µm x 100µm
Metallization Mask Layout
HS-26CT32RH, HS-26CT32EH
AIN VDD BIN
AIN (2)
AOUT (3)
ENAB (4)
COUT (5)
CIN (6)
(8) (9)
(14) BIN
(13) BOUT
(12) ENAB
(11) DOUT
(10) DIN
(1) (16) (15)
(7)
CIN GND DIN