Radiation Hardened Quad Differential Line Receivers HS-26CT32RH, HS-26CT32EH The Intersil HS-26CT32RH, HS-26CT32EH are differential line receivers designed for digital data transmission over balanced lines and meets the requirements of EIA standard RS-422. Radiation hardened CMOS processing assures low power consumption, high speed, and reliable operation in the most severe radiation environments. The HS-26CT32RH, HS-26CT32EH have an input sensitivity typically of 200mV over the common mode input voltage range of 7V. The receivers are also equipped with input fail safe circuitry, which causes the outputs to go to a logic "1" when the inputs are open. Enable and Disable functions are common to all four receivers. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the "Ordering Information" must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95631. A "hot-link" is also provided on our homepage for downloading. Features * Electrically Screened to SMD # 5962-95631 * QML Qualified per MIL-PRF-38535 Requirements * 1.2 Micron Radiation Hardened CMOS - Total Dose . . . . . . . . . . . . . . . . . . . . . . . Up to 300kRAD(Si) * Latch-up Free * EIA RS-422 Compatible Outputs * Operation with TTL Based on VIH = VDD/2 * Input Fail Safe Circuitry * High Impedance Inputs when Disabled or Powered Down * Low Power Dissipation Standby (Max) . . . . . . . . . . . .138mW * Single 5V Supply * Full Military Temperature Range . . . . . . . . -55C to +125C Applications * Line Receiver for MIL-STD-1553 Serial Data Bus * Line Receiver for RS422 Logic Diagram ENABLE ENABLE DIN DIN + - DOUT CIN CIN BIN BIN AIN AIN + + + - COUT - BOUT - AOUT Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER PART MARKING TEMP. RANGE (C) PACKAGE PKG. DWG. # 5962F9563101QEC HS1-26CT32RH-8 Q 5962F95 63101QEC -55 to +125 16 Ld SBDIP D16.3 5962F9563101QXC HS9-26CT32RH-8 Q 5962F95 63101QXC -55 to +125 16 Ld Flatpack K16.A 5962F9563101V9A HS0-26CT32RH-Q -55 to +125 Die 5962F9563101VEC HS1-26CT32RH-Q Q 5962F95 63101VEC -55 to +125 16 Ld SBDIP D16.3 5962F9563101VXC HS9-26CT32RH-Q Q 5962F95 63101VXC -55 to +125 16 Ld Flatpack K16.A 5962F9563102VXC HS9-26CT32EH-Q Q 5962F95 63102VXC -55 to +125 16 Ld Flatpack K16.A HS1-26CT32RH/PROTO HS1-26CT32RH/PROTO HS1- 26CT32RH /PROTO -55 to +125 16 Ld SBDIP D16.3 HS9-26CT32RH/PROTO HS9-26CT32RH/PROTO HS9- 26CT32RH /PROTO -55 to +125 16 Ld Flatpack K16.A 5962F9563102VEC HS1-26CT32EH-Q Q 5962F95 63102VEC -55 to +125 16 Ld SBDIP D16.3 September 25, 2012 FN2930.5 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2000, 2008, 2012. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. HS-26CT32RH, HS-26CT32EH Ordering Information (Continued) ORDERING NUMBER INTERNAL MKT. NUMBER 5962F9563102VXC HS9-26CT32EH-Q 5962F9563102V9A HS0-26CT32EH-Q PART MARKING Q 5962F95 63102VXC TEMP. RANGE (C) PACKAGE -55 to +125 16 Ld Flatpack -55 to +125 Die PKG. DWG. # K16.A Pin Configurations HS9-26CT32RH, HS9-26CT32EH (16 LD FLATPACK, CDFP4-F16) TOP VIEW HS1-26CT32RH (16 LD SBDIP, CDIP2-T16) TOP VIEW AIN 1 16 VDD AIN 1 16 VDD AIN 2 15 BIN AIN 2 15 BIN AOUT 3 14 BIN ENABLE 4 13 BOUT COUT 5 12 ENABLE CIN 6 11 DOUT CIN 7 10 DIN GND 8 9 DIN 14 BIN AOUT 3 13 BOUT ENABLE 4 COUT 5 12 ENABLE CIN 6 11 DOUT CIN 7 10 DIN GND 8 9 DIN For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 2 FN2930.5 September 25, 2012 HS-26CT32RH, HS-26CT32EH Die Characteristics DIE DIMENSIONS: Backside Finish: 78 mils x 123 mils (1970m x 3120m) Silicon ASSEMBLY RELATED INFORMATION: INTERFACE MATERIALS: Substrate Potential: Glassivation: VDD (When Powered Up) Type: PSG (Phosphorus Silicon Glass) Thickness: 10kA 1kA ADDITIONAL INFORMATION: Worst Case Current Density: Top Metallization: <2.0 x 105A/cm2 M1: Mo/Tiw Thickness: 5800A M2: Al/Si/Cu Thickness: 10kA 1kA Transistor Count: 240 Bond Pad Size: Substrate: 110m x 100m AVLSI1RA Metallization Mask Layout HS-26CT32RH, HS-26CT32EH AIN (1) VDD (16) BIN (15) (14) BIN AIN (2) (13) BOUT AOUT (3) ENAB (4) (12) ENAB COUT (5) (11) DOUT (10) DIN CIN (6) (7) CIN 3 (8) GND (9) DIN FN2930.5 September 25, 2012