1 Oct-17-1997
BSM 300 GA 120 DL
IGBT Power Module
Preliminary data
• Low Loss IGBT
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type V CE IC Package Ordering Code
BSM 300 GA 120 DL 1200V 550A SINGLE SWITCH 1 Q67050-S1004-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V CE 1200 V
Collector-gate voltage
RGE = 20 kΩV CGR 1200
Gate-emitter voltage V GE ± 20
DC collector current
TC = 25 °C
TC = 90 °C
IC
300
550 A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
ICpuls
600
1100
Power dissipation per IGBT
TC = 25 °C P to t 2500 W
Chip temperature Tj + 150 °C
Storage temperature Tstg -40 ... + 125
Thermal resistance, chip case RthJC ≤ 0 . 0 5 K / W
Diode thermal resistance, chip case RthJCD ≤ 0.125
Insulation test voltage, t = 1min. V is 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
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2 Oct-17-1997
BSM 300 GA 120 DL
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V GE = VCE, IC = 12 mA V GE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
V GE = 1 5 V , IC = 300 A, Tj = 2 5 ° C
V GE = 1 5 V , IC = 300 A, Tj = 125 °C
V CE(sat)
-
- 2.5
2.2 3
2.6
Zero gate voltage collector current
V CE = 1200 V, V GE = 0 V , Tj = 2 5 ° C
V CE = 1200 V, V GE = 0 V , Tj = 125 °C
ICES
-
--
--
14 mA
Gate-emitter leakage current
V GE = 2 0 V , V CE = 0 V IGES - - 600 nA
AC Characteristics
Transconductance
V CE = 20 V, IC = 300 A gfs 120 - -S
Input capacitance
V CE = 25 V, V GE = 0 V , f = 1 M H z Ciss - 22 - nF
Output capacitance
V CE = 25 V, V GE = 0 V , f = 1 M H z Coss - 3.3 -
Reverse transfer capacitance
V CE = 25 V, V GE = 0 V , f = 1 M H z Crss - 1.2 -
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3 Oct-17-1997
BSM 300 GA 120 DL
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
V CC = 600 V, V GE = 1 5 V , IC = 300 A
RGon = 3.3 Ω
td(on)
- 80 -
ns
Rise time
V CC = 600 V, V GE = 1 5 V , IC = 300 A
RGon = 3.3 Ω
tr
- 100 -
Turn-off delay time
V CC = 600 V, V GE = -15 V, IC = 300 A
RGoff = 3.3 Ω
td(off)
- 600 -
Fall time
V CC = 600 V, V GE = -15 V, IC = 300 A
RGoff = 3.3 Ω
tf
- 100 -
Free-Wheel Diode
Diode forward voltage
IF = 300 A, V GE = 0 V , Tj = 2 5 ° C
I F = 300 A, V GE = 0 V , Tj = 125 °C
V F
-
- 1.8
2.3 -
2.8 V
Reverse recovery time
IF = 300 A, V R = -600 V, V GE = 0 V
di F/dt = -2500 A/µs, Tj = 125 °C
trr
- 0.55 -
µs
Reverse recovery charge
IF = 300 A, V R = -600 V, V GE = 0 V
di F/dt = -2500 A/µs
Tj = 2 5 ° C
Tj = 125 °C
Qrr
-
- 40
14 -
-
µC
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4 Oct-17-1997
BSM 300 GA 120 DL
Power dissipation
P tot = ƒ( T C )
parameter: T j
≤ 150 °C
0 20 40 60 80 100 120 °C 160
TC
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
W
2600
P tot
Safe operating area
IC = ƒ( VCE)
parameter: D = 0 , TC = 2 5 ° C , T j ≤ 150 °C
0
10
1
10
2
10
3
10
4
10
A
I C
10 0 10 1 10 2 10 3 V
VCE
DC
10 ms
1 ms
100 µs
t p = 1 5 . 0µ s
Collector current
IC = ƒ( T C )
parameter: V GE ≥ 15 V , T j
≤ 150 °C
0 20 40 60 80 100 120 °C 160
TC
0
50
100
150
200
250
300
350
400
450
500
A
600
I C
Transient thermal impedance IGBT
Z th JC = ƒ ( tp )
parameter: D = tp / T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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5 Oct-17-1997
BSM 300 GA 120 DL
Typ. output characteristics
IC = f (VCE)
parameter: tp = 250 µs, T j = 25 °C
0 1 2 3 V 5
V CE
0
50
100
150
200
250
300
350
400
450
500
A
600
I C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
IC = f (VCE)
parameter: tp = 250 µs, T j = 125 °C
0 1 2 3 V 5
VCE
0
50
100
150
200
250
300
350
400
450
500
A
600
I C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 250 µs, VCE = 20 V
0 2 4 6 8 10 V 14
V GE
0
50
100
150
200
250
300
350
400
450
500
A
600
I C
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6 Oct-17-1997
BSM 300 GA 120 DL
Typ. gate charge
V GE = ƒ( Q Gate )
parameter: IC puls = 3 0 0 A
0 200 400 600 800 1000120014001600 nC 2000
QGate
0
2
4
6
8
10
12
14
16
V
20
V GE
800 V600 V
Typ. capacitances
C = f (V CE)
parameter: VGE = 0 V, f = 1 MHz
0 5 10 15 20 25 30 V 40
VCE
-1
10
0
10
1
10
2
10
nF
C Ciss
Coss
Crss
Reverse biased safe operating area
ICpuls = f(VCE) , T j = 150°C
parameter: V GE = 15 V
0 200 400 600 800 1000 1200 V 1600
V CE
0.0
0.5
1.0
1.5
2.5
ICpuls/IC
Short circuit safe operating area
ICsc = f(VCE) , T j = 150°C
parameter: V GE = ± 15 V, tSC ≤ 10 µs, L < 20 nH
0 200 400 600 800 1000 1200 V 1600
V CE
0
2
4
6
8
12
ICsc /IC
circuit: >1s
° time between short
short circuit: <1000
° allowed numbers of
di/dt = 1000A/µs
3000A/µs
5000A/µs
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7 Oct-17-1997
BSM 300 GA 120 DL
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, R G = 3.3 Ω
0 100 200 300 400 500 A 700
I C
1
10
2
10
3
10
4
10
ns
t
tr
tdon
tdoff
tf
Typ. switching time
t = f (RG) , inductive load , T j = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 300 A
0 5 10 15 20 25 30 Ω 40
RG
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (IC) , inductive load , T j = 125°C
par.: VCE = 600 V, VGE = ± 15 V, R G = 3.3 Ω
0 100 200 300 400 500 A 700
I C
0
20
40
60
80
100
120
140
mWs
180
E
Eon
Eoff
Typ. switching losses
E = f (RG) , inductive load , Tj = 1 2 5 ° C
par.: VCE = 600V, VGE = ± 15 V, IC = 300 A
0 5 10 15 20 25 30 Ω 40
RG
0
20
40
60
80
100
120
140
mWs
180
E
Eon
Eoff
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8 Oct-17-1997
BSM 300 GA 120 DL
Forward characteristics of fast recovery
reverse diode IF = f(VF)
parameter: T j
0.0 0.5 1.0 1.5 2.0 V 3.0
V F
0
50
100
150
200
250
300
350
400
450
500
A
600
I F
T j=25°C
=125°C
j
T
Transient thermal impedance Diode
Z th JC = ƒ ( tp )
parameter: D = tp / T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
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9 Oct-17-1997
BSM 300 GA 120 DL
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
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