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IRFD014PbF
PD- 95920
10/27/04
Lead-Free
IRFD014PbF
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IRFD014PbF
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IRFD014PbF
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IRFD014PbF
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IRFD014PbF
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IRFD014PbF
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery dv/dt Test Circuit
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig -14 For N Channel HEXFETS
IRFD014PbF
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Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
Hexdip Package Outline
Dimensions are shown in millimeters (inches)
Hexdip Part Marking Information
THIS IS AN IRFD 120
PART NUMBER
DATE CODE
WW = WEEK
Y = YEAR
ASSEMBLY LOT CODE
RECTIFIER
INTERNATIONAL
LOGO IRFD120
XXXX (PYWWA)
A = ASSEMBLY SITE CODE
P = LEAD-FREE (optional)
