VISHAY
SMF5.0A to SMF51A
Document Number 85811
Rev. 4, 17-Mar-03
Vishay Semiconductors
www.vishay.com
1
17249
Surface Mount ESD Protection Diodes
\
Features
For surface mounted applications
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
IEC 1000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 1000-4-4 (EFT) 40 A (tp = 5/ 50 ns)
IEC 1000-4-5 (Lightning) 24 A (tp = 8/ 20 µs)
Low incremental surge resistance, excellent
clamping capability
200 W peak pulse power capability with a
10/1000 µs waveform, repetition rate
(duty cycle): 0.01 %
Very fast response time
High temperature soldering guaranteed:
260 °C/ 10 seconds at terminals
Mechanical Data
Case: JEDEC DO-219-AB (SMF) Plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 0.00035 oz, 0.01g
Packaging Codes/Options:
G1/10 K per 13 " reel (8 mm tape), 50 K/box
G2/3 K per 7 " reel (8 mm tape), 30 K/box
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
1) Non-repetitive current pulse and derated above TA = 25 °C
Maximum Thermal Resistance
Ratings at 25 °C, ambient temperature unless otherwise specified
2) Mounted on epoxy substrate with 3 x 3 mm, cu pads ( 40 µm thick)
Parameter Te st c o n d i t i o n Symbol Value Unit
Peak pulse power dissipation 10/1000 µs waveform1) PPPM 200 W
8/20 µs waveform1) PPPM 1000 W
Peak pulse current 10/1000 µs waveform1) IPPM next
Table
A
Peak forward surge current 8.3 ms single half sine-wave IFSM 20 A
Parameter Symbol Value Unit
Thermal resistance2) RthJA 180 K/W
Operation junction and storage
temperature range
Tstg, TJ- 55 to + 150 °C
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Document Number 85811
Rev. 4, 17-Mar-03
VISHAY
SMF5.0A to SMF51A
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. VF = 3.5 V at IF = 12 A (uni-directional only)
1) Pulse test tp 5.0 ms
2) Surge current waveform 10/1000 µs
3) All terms and symbols are consistent with ANSI/IEEE C62.35
Partnumber Marking
Code
UNI
Breakdown
Voltage1)
Test Current Stand-off
Voltage
Maximum
Reverse
Leakage
Maximum
Peak Pulse
Surge
Current 2,3)
Maximum
Clamping
Voltage
V(BR) @ ITVWM @ VWM
ID
IPPM @ IPPM
VC
VmA VµA A V
min
SMF5.0A AE 6.40 10 5.0 400 21.7 9.2
SMF6.0A AG 6.67 10 6.0 400 19.4 10.3
SMF6.5A AK 7.22 10 6.5 250 17.9 11.2
SMF7.0A AM 7.78 10 7.0 100 16.7 12.0
SMF7.5A AP 8.33 1.0 7.5 50 15.5 12.9
SMF8.0A AR 8.89 1.0 8.0 25 14.7 13.6
SMF8.5A AT 9.44 1.0 8.5 10 13.9 14.4
SMF9.0A AV 10.0 1.0 9.0 5.0 13.5 15.4
SMF10A AX 11.1 1.0 10 2.5 11.8 17.0
SMF11A AZ 12.2 1.0 11 2.5 11.0 18.2
SMF12A BE 13.3 1.0 12 2.5 10.1 19.9
SMF13A BG 14.4 1.0 13 1.0 9.3 21.5
SMF14A BK 15.6 1.0 14 1.0 8.6 23.2
SMF15A BM 16.7 1.0 15 1.0 8.2 24.4
SMF16A BP 17.8 1.0 16 1.0 7.7 26.0
SMF17A BR 18.9 1.0 17 1.0 7.2 27.6
SMF18A BT 20.0 1.0 18 1.0 5.8 29.2
SMF20A BV 22.2 1.0 20 1.0 6.2 32.4
SMF22A BX 24.4 1.0 22 1.0 5.6 35.5
SMF24A BZ 26.7 1.0 24 1.0 5.1 38.9
SMF26A CE 28.9 1.0 26 1.0 4.8 42.1
SMF28A CG 31.1 1.0 28 1.0 4.4 45.4
SMF30A CK 33.3 1.0 30 1.0 4.1 48.4
SMF33A CM 36.7 1.0 33 1.0 3.8 53.3
SMF36A CP 40.0 1.0 36 1.0 3.4 58.1
SMF40A CR 44.4 1.0 40 1.0 3.1 64.5
SMF43A CT 47.8 1.0 43 1.0 2.9 69.4
SMF45A CV 50.0 1.0 45 1.0 2.8 72.7
SMF48A CX 53.3 1.0 48 1.0 2.6 77.4
SMF51A CZ 56.7 1.0 51 1.0 2.4 82.4
VISHAY
SMF5.0A to SMF51A
Document Number 85811
Rev. 4, 17-Mar-03
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Peak Pulse Power Rating
Figure 2. Pulse Derating Curve
Figure 3. Pulse Waveform
PPPM - Peak Pulse Power (kW)
0.1
1
10
0.1µs 1.0µs10µs
td- Pulse Width (sec.)
100µs 1.0ms 10ms
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
=25 °C
17250
0
25
50
75
100
07525 50 100 125 150 175 200
Peak Pulse Power (PPP) or Current (IPPM)
Derating in Percentage, %
TA- Ambient Temperature (°C)
17251
0
50
100
150
IPPM - Peak Pulse Current, % IRSM
T
J
=25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10 µs
Peak Value
IPPM
Half Value - IPP
IPPM 2
td
10/1000sec. Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t - Time (ms)
17252
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4
Document Number 85811
Rev. 4, 17-Mar-03
VISHAY
SMF5.0A to SMF51A
Vishay Semiconductors
Package Dimensions in mm
Mounting Pad Layout
T op View
1.0 ±0.2
1.8 0.1
2.8 ±0.1
0.98 0.1 0.05 - 0.30
5
5
Z
Cathode Band
Detail
Z
enlarged
0.00 - 0.10
0.60 ±0.25
3.7 ±0.2
±
17247
±
1.6 1.2
1.2
17248
VISHAY
SMF5.0A to SMF51A
Document Number 85811
Rev. 4, 17-Mar-03
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423