SMF5.0A to SMF51A VISHAY Vishay Semiconductors Surface Mount ESD Protection Diodes \ Features * * * * For surface mounted applications Low-profile package Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) * Ideal for EFT protection of data lines in accordance with IEC 1000-4-4 (IEC801-4) * IEC 1000-4-2 (ESD) 15 kV (air) 8 kV (contact) IEC 1000-4-4 (EFT) 40 A (tp = 5/ 50 ns) IEC 1000-4-5 (Lightning) 24 A (tp = 8/ 20 s) 17249 * Low incremental surge resistance, excellent clamping capability * 200 W peak pulse power capability with a 10/1000 s waveform, repetition rate (duty cycle): 0.01 % * Very fast response time * High temperature soldering guaranteed: 260 C/ 10 seconds at terminals Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity:The band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: approx. 0.00035 oz, 0.01g Packaging Codes/Options: G1/10 K per 13 " reel (8 mm tape), 50 K/box G2/3 K per 7 " reel (8 mm tape), 30 K/box Mechanical Data Case: JEDEC DO-219-AB (SMF) Plastic case Absolute Maximum Ratings Ratings at 25 C, ambient temperature unless otherwise specified Parameter Peak pulse power dissipation Test condition 10/1000 s Symbol Value Unit PPPM 200 W PPPM 1000 W next Table A 20 A waveform1) 8/20 s waveform 1) Peak pulse current 10/1000 s waveform IPPM Peak forward surge current 8.3 ms single half sine-wave IFSM 1) 1) Non-repetitive current pulse and derated above TA = 25 C Maximum Thermal Resistance Ratings at 25 C, ambient temperature unless otherwise specified Parameter Thermal resistance 2) Operation junction and storage temperature range 2) Symbol Value Unit RthJA 180 K/W Tstg, TJ - 55 to + 150 C Mounted on epoxy substrate with 3 x 3 mm, cu pads ( 40 m thick) Document Number 85811 Rev. 4, 17-Mar-03 www.vishay.com 1 SMF5.0A to SMF51A VISHAY Vishay Semiconductors Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. V F = 3.5 V at IF = 12 A (uni-directional only) Partnumber Marking Code UNI Breakdown Test Current Voltage1) Stand-off Voltage Maximum Reverse Leakage Maximum Peak Pulse Surge Maximum Clamping Voltage Current 2,3) V(BR) @ IT VWM @ VWM ID IPPM @ IPPM VC V mA V A A V min SMF5.0A AE 6.40 10 5.0 400 21.7 9.2 SMF6.0A AG 6.67 10 6.0 400 19.4 10.3 SMF6.5A AK 7.22 10 6.5 250 17.9 11.2 SMF7.0A AM 7.78 10 7.0 100 16.7 12.0 SMF7.5A AP 8.33 1.0 7.5 50 15.5 12.9 SMF8.0A AR 8.89 1.0 8.0 25 14.7 13.6 SMF8.5A AT 9.44 1.0 8.5 10 13.9 14.4 SMF9.0A AV 10.0 1.0 9.0 5.0 13.5 15.4 SMF10A AX 11.1 1.0 10 2.5 11.8 17.0 SMF11A AZ 12.2 1.0 11 2.5 11.0 18.2 SMF12A BE 13.3 1.0 12 2.5 10.1 19.9 SMF13A BG 14.4 1.0 13 1.0 9.3 21.5 SMF14A BK 15.6 1.0 14 1.0 8.6 23.2 SMF15A BM 16.7 1.0 15 1.0 8.2 24.4 SMF16A BP 17.8 1.0 16 1.0 7.7 26.0 SMF17A BR 18.9 1.0 17 1.0 7.2 27.6 SMF18A BT 20.0 1.0 18 1.0 5.8 29.2 SMF20A BV 22.2 1.0 20 1.0 6.2 32.4 SMF22A BX 24.4 1.0 22 1.0 5.6 35.5 SMF24A BZ 26.7 1.0 24 1.0 5.1 38.9 SMF26A CE 28.9 1.0 26 1.0 4.8 42.1 SMF28A CG 31.1 1.0 28 1.0 4.4 45.4 SMF30A CK 33.3 1.0 30 1.0 4.1 48.4 SMF33A CM 36.7 1.0 33 1.0 3.8 53.3 SMF36A CP 40.0 1.0 36 1.0 3.4 58.1 SMF40A CR 44.4 1.0 40 1.0 3.1 64.5 SMF43A CT 47.8 1.0 43 1.0 2.9 69.4 SMF45A CV 50.0 1.0 45 1.0 2.8 72.7 SMF48A CX 53.3 1.0 48 1.0 2.6 77.4 SMF51A CZ 56.7 1.0 51 1.0 2.4 82.4 1) Pulse test tp 5.0 ms 2) Surge current waveform 10/1000 s 3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 85811 Rev. 4, 17-Mar-03 SMF5.0A to SMF51A VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 10 PPPM - Peak Pulse Power (kW) Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25 C 1 0.1 0.1s 1.0s 10s 100s 1.0ms 10ms 17250 td - Pulse Width (sec.) Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, % Figure 1. Peak Pulse Power Rating 100 75 50 25 0 0 25 17251 50 75 100 125 150 175 200 TA - Ambient Temperature (C) Figure 2. Pulse Derating Curve IPPM - Peak Pulse Current, % IRSM 150 TJ = 25 C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10 s Peak Value IPPM 100 Half Value - IPP 2 IPPM 50 10/1000 sec. Waveform as defined by R.E.A. td 0 0 1.0 17252 2.0 3.0 4.0 t - Time (ms) Figure 3. Pulse Waveform Document Number 85811 Rev. 4, 17-Mar-03 www.vishay.com 3 SMF5.0A to SMF51A VISHAY Vishay Semiconductors Package Dimensions in mm Cathode Band T op View 1.8 0.1 1.0 0.2 2.8 0.1 5 0.05 - 0.30 0.98 0.1 5 Z 0.60 0.25 Detail Z enlarged 0.00 - 0.10 3.7 0.2 17247 Mounting Pad Layout 1.6 1.2 1.2 17248 www.vishay.com 4 Document Number 85811 Rev. 4, 17-Mar-03 SMF5.0A to SMF51A VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85811 Rev. 4, 17-Mar-03 www.vishay.com 5