3.4 +0.3
-0.1 0.4±0.1
φ1.5±0.1
Cathode indif i ca tion
FEATURES
◇ Silicon epitaxial planar diode
◇ High speed switching diode
◇ 500 mW power dissipation
MECHANICAL DATA
◇ Case: MINI-MELF,glass case
◇ Polarity: Color band denotes cathode
◇ Weight: Approx 0.031 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATING
S
UNITS
Reverse voltage VRV
Peak reverse voltage VRM V
Average forward rectified current VR=0V
IO mA
Forward surge current at t=1µsIFSM A
Power dissipation Ptot mW
Thermal resistance junction to ambient Rthja K/W
Junction temperature Tj ℃
Storage temperature range TSTG ℃
UNITS
Forward voltage at IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
Leakage current @VR=50V,TJ=25℃
VR=50V,TJ=150℃
Capacitance at VR=0V,f=1MHZ,VHF=50mV Ctot pF
Reverse recovery time
IF=IR=(10to100mA),iR=0.1×IR
RL=100Ω
- 4.0
trr
-
-65 --- + 175
4.0
500
MAX.
BL
GALAXY ELECTRICAL LL4150
300
VOLTAGE RANGE: 50 V
SMALL SIGNAL SWITCHING DIODE
50
50
CURRENT: 300 m A
LL4150
MINI-MELF
ELECTRICAL CHARACTERISTIC
S
175
350
MIN.
0.76
0.82
0.87
0.66
0.54
www.galaxycn.com
0.86
0.92
1.0
0.1
2.5
ns
- 100
V
VF
IRµA
-
0.74
0.62
Document Number 0268024 1.BLGALAXY ELECTRICAL
TJ=25
-2
10
-1
10
1
10
3
10
mA
IF
VF
2
10
0 0.5 1V
200
400
600
800
0 100 200℃
1000
100
300
700
500
900
0
mW
Ptot
TA
BLGALAXY ELECTRICAL
www.galaxycn.com
Document Number 0268024 2.
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS
RATINGS AND CHARACTERISTIC CURVES LL4 150
FIG.3 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE
0 200℃
10
1
nA
3
10
2
10
4
10
VR=50V
100
