SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5802US thru 1N5806US
1N5802US – 1N5806US
DESCRIPTION APPEARANCE
This “Ultrafast Recover y” surf ace mount rectifier diode seri es is military qualified to MIL-
PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. They are also available in axial-
leaded package configurations for thru-hole mounting (see separate data sheet for
1N5802 thru 1N5806). Microsemi als o offers numerous ot her rectifier products to meet
higher and lower current ratings with various recovery time speed requirements
including standard, fast and ultrafast device types in both through-hole and surface
mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Surface mount package series equivalent to the JEDEC
registered 1N5802 to 1N5806 series
• Voidless hermetically s ealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
• Axial-leaded e quivalents available (see 1N5 802 thru 1N5806)
• Ultrafast recovery 2.5 Amp rectifier series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capab ility
• Low thermal resistance
• Contro lled avalanche with peak reverse po wer
capability
• Inhere ntly radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Average Rectified For ward Current (IO): 2.5 A @ TEC = 75ºC
• Thermal Resistance: 13 ºC/W junctio n to end cap
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING and POLARITY: Cathode band only
• Tape & Reel option: Standard per EIA-481-B
• Weight: 193 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
VBR
AVERAGE
RECTIFIED
CURRENT
IO1 @
TEC=+75ºC
(NOTE 1)
AVERAGE
RECTIFIED
CURRENT
IO2 @
TA=+55ºC
(Note 2)
MAXIMUM
FORWARD
VOLTAGE
@ 1 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
VOLTS VOLTS AMPS AMPS VOLTS μA AMPS ns
25oC 100oC25
oC 125oC
1N5802US
1N5803US
1N5804US
1N5805US
1N5806US
50
75
100
125
150
55
80
110
135
160
2.5
2.5
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
0.875
0.875
0.875
0.800
0.800
0.800
1
1
1
1
1
175
175
175
175
175
35
35
35
35
35
25
25
25
25
25
NOTE 1: IO1 is rated at 2.5 A @ TEC = 75º. Derate at 50 mA/ºC for TEC above 125ºC.
NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC.
NOTE 3: TA = 25oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
Microsemi
Scottsdale Division Page 1
NOTE 4: IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A
Copyright © 2009
10-06-2009 REV C; SD41A.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5802US thru 1N5806US
1N5802US – 1N5806US
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specified current
VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range
IO Average Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr Reverse Recovery Time: The time interval between the instant the current passes through zero when changing
from the forward direction to the reverse direction and a specified recovery decay poi nt after a peak reverse
current occurs.
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously PAD LAYOUT
been identified as “D-5A” INCHES mm
A 0.246 6.25
B 0.067 1.70
C 0.105 2.67
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
INCHES mm
MIN MAX MIN MAX
BD .097 .103 2.46 2.62
BL .185 .200 4.70 5.08
ECT .019 .028 0.48 0.71
S .003 --- 0.08 ---
Copyright © 2009
10-06-2009 REV C; SD41A.pdf
