Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky barrier Diode
RB751G-40
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
General rectification
Features
1) Small power mold type.(VMD2)
2) Low VF
3) High reliability
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
Io mA
IFSM mA
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)Symbol Min. Typ. Max. Unit Conditions
VF- - 0.37 V IF=1mA
Reverse current IR- - 0.5 μAV
R=30V
Ct - 2 - pF VR=1V , f=1MHz
Parameter
Forward voltage
Capacitance between terminals
Storage temperature 40 to 125
Forward current surge peak (60Hz・1cyc) 200
Junction temperature 125
Reverse voltage (DC) 30
Average rectified forward current 30
Parameter Limits
Reverse voltage (repetitive peak) 40
VMD2
0.5
1.2
0.5
ROHM : VMD2
dot (year week factory)
0.13±0.03
0.5±0.05
0.27±0.03
0.6±0.05
1.0±0.05
1.4±0.05
0.76±0.1 4±0.1
4±0.1 2±0.05 φ1.5+0.1
0
3.5±0.05 1.75±0.1
8.0±0.3
0.1
0.18±0.05
0.65±0.05
φ0.5
0.4
2±0.05
0.3
1.11±0.05
2.1±0.1
1/3 2011.05 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB751G-40
0
5
10
15
20
25
30
AVE:11.7ns
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1
10
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
0.001
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
0.1
1
10
0 5 10 15 20 25 30
f=1MHz
280
290
300
310
320
330
0
100
200
300
400
500
600
700
800
900
1000
0
1
2
3
4
5
6
7
8
9
10
AVE:1.81pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
AVE:3.40A
8.3ms
Ifsm 1cyc
0
2
4
6
8
10
1 10 100
0
2
4
6
8
10
0.1 1 10 100
t
Ifsm
0
0.01
0.02
0.03
0.04
0.05
0 0.010.020.030.040.05
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
AVE:304.2mV
Ta=25℃
IF=1mA
n=30pcs
Ta=25℃
VR=30V
n=30pcs
AVE:111.0nA
8.3ms
Ifsm
1cyc
8.3ms
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
DC
D=1/2
Sin(θ＝180)
2/3 2011.05 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB751G-40
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.001
0.002
0.003
0 10203040
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
DC
D=1/2
TTj=125℃
D=t/T
tVR
Io
VR=20V
0A
0V
TTj=125℃
D=t/T
tVR
Io
VR=20V
0A
0V
3/3 2011.05 - Rev.B
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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