Data Sheet Schottky barrier Diode RB751G-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.5 0.130.03 0.5 0.60.05 1.40.05 1.00.05 1.2 Features 1) Small power mold type.(VMD2) 2) Low VF 3) High reliability VMD2 Construction Silicon epitaxial planar Structure 0.270.03 0.50.05 ROHM : VMD2 dot (year week factory) Taping specifications (Unit : mm) 0.180.05 1.5+0.1 0 20.05 8.00.3 0.1 0.4 2.10.1 1.110.05 3.50.05 1.750.1 40.1 0.5 Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz1cyc) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25C) Parameter Symbol Limits 40 30 30 200 125 40 to 125 0.3 20.05 40.1 0.760.1 0.650.05 Unit V V mA mA C C Min. Typ. Max. Unit Conditions Forward voltage VF Reverse current Capacitance between terminals IR - - 0.37 0.5 V A IF=1mA VR=30V Ct - 2 - pF VR=1V , f=1MHz www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B Data Sheet RB751G-40 100 Ta=125 100000 10 Ta=125 Ta=25 1 Ta=-25 0.1 0.01 10000 Ta=75 1000 Ta=25 100 Ta=-25 10 0.001 100 200 300 400 500 600 700 800 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 35 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 40 320 310 300 290 800 600 500 400 200 AVE:111.0nA 5 4 AVE:1.81pF 3 2 1 0 Ct DISPERSION MAP 10 1cyc Ifsm 8.3ms 10 AVE:3.40A 5 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 0 AVE:11.7ns PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 30 15 Ifsm 8 8.3ms 8.3ms 1cyc 6 4 2 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP t 6 4 2 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 0.04 Rth(j-c) 100 Mounted on epoxy board IM=1mA IF=10mA FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.05 1000 10 30 6 IR DISPERSION MAP 20 25 Ta=25 f=1MHz VR=0V n=10pcs 7 0 VF DISPERSION MAP 20 8 100 280 15 9 700 AVE:304.2mV 10 10 Ta=25 VR=30V n=30pcs 900 300 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 IF=1mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 5 1000 330 1 0.1 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz Ta=75 10 D=1/2 0.03 DC Sin(180) 0.02 0.01 1ms 10 0.001 time 300us 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 0 1000 0 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.05 2011.05 - Rev.B Data Sheet RB751G-40 0.1 0.1 D=1/2 DC Sin(180) 0.001 0A 0V 0.08 0.06 0.04 t T DC 0A 0V Io VR D=t/T VR=20V Tj=125 D=1/2 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.002 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.003 0.08 0.06 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 40 T D=1/2 0.04 0.02 Sin(180) 0 0 0 t DC Sin(180) 0 Io VR D=t/T VR=20V Tj=125 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 3/3 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A