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FGD5T120SH — 1200 V, 5 A FS Trench IGBT
November 2015
©2015 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGD5T120SH Rev. 1.0
FGD5T120SH
1200 V, 5 A FS Trench IGBT
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: VCE(sat) =2.9 V @ IC = 5 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• RoHS Compliant
Applications
• Inrush current limitation
• Lighting
• Home appliances
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for inrush current limitation, lighting and home appliance
applications.
D-PAK
G
E
C
Absolute Maximum Ratings
Symbol Description FGD5T120SH Unit
VCES Collector to Emitter Voltage 1200 V
VGES
Gate to Emitter Voltage ±25 V
Transient Gate to Emitter Voltage ±30 V
IC
Collector Current @ TC = 25oC10 A
Collector Current @ TC = 100oC 5 A
ILM (1) Clamped Inductive Load Current @ TC = 25oC 12.5 A
ICM (2) Pulsed Collector Current 12.5 A
PD
Maximum Power Dissipation @ TC = 25oC69 W
Maximum Power Dissipation @ TC = 100oC28 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
TC = 25°C unless otherwise noted
Notes:
1. Vcc = 600 V,VGE = 15 V, IC = 12.5 A, RG = 50 Ω, Inductive Load
2. Limited by Tjmax
©2015 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGD5T120SH — 1200 V, 5 A FS Trench IGBT
FGD5T120SH Rev. 1.0
Thermal Characteristics
Notes : 3. Mounted on 1” squre PCB (FR4 or G-10 material)
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter FGD5T120SH Unit
RθJC (IGBT) Thermal Resistance, Junction to Case, Max. 1.8 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. (3) 50 oC/W
Device Marking Device Package Reel Size Tape Width Qty per Tube
FGD5T120SH FGD5T120SH TO-252 A03 380 mm 16 mm 2500
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 1200 - - V
ΔBVCES
/ ΔTJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 250 uA -1.2-V/
oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ± 400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 5 mA, VCE = VGE 2.5 3.5 4.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 5 A, VGE = 15 V -2.93.6V
IC = 5 A, VGE = 15 V,
TC = 150oC-4.5- V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
- 209 - pF
Coes Output Capacitance - 11 - pF
Cres Reverse Transfer Capacitance - 2 - pF
Switching Characteristics
Td(on) Turn-On Delay Time
VCC = 600 V, IC = 5 A,
RG = 30 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
-4.8- ns
TrRise Time - 20.8 - ns
Td(off) Turn-Off Delay Time - 24.8 - ns
TfFall Time - 104 - ns
Eon Turn-On Switching Loss - 247 - uJ
Eoff Turn-Off Switching Loss - 94 - uJ
Ets Total Switching Loss - 341 - uJ
Td(on) Turn-On Delay Time
VCC = 600 V, IC = 5 A,
RG = 30 Ω, VGE = 15 V,
Inductive Load, TC = 150oC
-4.8- ns
TrRise Time - 40 - ns
Td(off) Turn-Off Delay Time - 25.6 - ns
TfFall Time - 134 - ns
Eon Turn-On Switching Loss - 393 - uJ
Eoff Turn-Off Switching Loss - 114 - uJ
Ets Total Switching Loss - 507 - uJ
QgTotal Gate Charge
VCC = 600 V, IC = 5 A,
VGE = 15 V
-6.7- nC
Qge Gate to Emitter Charge - 1.8 - nC
Qgc Gate to Emitter Charge - 2.6 - nC
©2015 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGD5T120SH — 1200 V, 5 A FS Trench IGBT
FGD5T120SH Rev. 1.0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteritics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
246810
0
3
6
9
12
15
7V
VGE = 17V
11V
TC = 25oC
15V
13V
9V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0246810
0
3
6
9
12
VGE = 17V
9V
7V
TC = 150oC
15V
13V
11V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0246810
0
3
6
9
12
15
Common Emitter
VGE = 15V
TC = 25oC
TC = 150oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0481216
0
3
6
9
12
15
150oC
-40oC
TC = 25oC
Common Emitter
VCE = 20V
Collector Current, IC [A]
Gate-Emitter Voltage,VGE [V]
25 50 75 100 125 150
2
4
6
8
10
10A
5A
IC = 3A
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Case Temperature, TC [oC]
4 8 12 16 20
0
4
8
12
16
20
IC = 3A
5A
10A
Common Emitter
TC = -40oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
©2015 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGD5T120SH — 1200 V, 5 A FS Trench IGBT
FGD5T120SH Rev. 1.0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
IC = 3A
5A
10A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
4
8
12
16
20
IC = 3A
5A
10A
Common Emitter
TC = 150oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
5 1015202530
1
10
100
500
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
02468
0
3
6
9
12
15
Common Emitter
TC = 25oC
600V
400V
VCC = 200V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Qg [nC]
30 60 90 120 150
1
10
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 5A
TC = 25oC
TC = 150oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
1 10 100 1000 3000
0.01
0.1
1
10
50
1ms
10 ms
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10μs
100μs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
©2015 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGD5T120SH — 1200 V, 5 A FS Trench IGBT
FGD5T120SH Rev. 1.0
Typical Performance Characteristics
Figure 13. Turn-off Characteristics VS. Figure 14.Turn-on Characteristics VS.
Gate Resistance Collector Current
Figure 15.Turn-off Characteristics VS. Figure 16.Switching Loss VS.
Collector Current Gate Resistance
Figure 17. Switching Loss VS. Figure 18. Current Derating
Collector Current
30 60 90 120 150
10
100
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 5A
TC = 25oC
TC = 150oC
td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
246810
1
10
100
Common Emitter
VGE = 15V, RG = 30Ω
TC = 25oC
TC = 150oC tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
246810
10
100
1000
Common Emitter
VGE = 15V, RG = 30Ω
TC = 25oC
TC = 150oC
td(off)
tf
Switching Time [ns]
Collector Current, IC [A]
30 60 90 120 150
10
100
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 5A
TC = 25oC
TC = 150oC
Eon
Eoff
Switching Loss [uJ]
Gate Resistance, RG [Ω]
246810
10
100
1000
Common Emitter
VGE = 15V, RG = 30Ω
TC = 25oC
TC = 150oC
Eon
Eoff
Switching Loss [uJ]
Collector Current, IC [A]
25 50 75 100 125 150
0
2
4
6
8
10
ICE, Collector Current [A]
Case temperature, TC [oC]
©2015 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGD5T120SH — 1200 V, 5 A FS Trench IGBT
FGD5T120SH Rev. 1.0
Figure 19. Load Current Vs. Frequency
Figure 20. Transient Thermal Impedance of IGBT
1k 10k 100k 1M
0
5
10
15
20
25
TC = 25oC
Square Wave
TJ <= 150oC, D = 0.5, VCE = 600V
VGE = 15/0V, RG = 30Ω
Collector Current, [A]
Switching Frequency, f[Hz]
1E-5 1E-4 1E-3 0.01 0.1 1
0.03
0.1
1
2
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t
1
P
DM
t
2
©2015 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGD5T120SH — 1200 V, 5 A FS Trench IGBT
FGD5T120SH Rev. 1.0
Mechanical dimensions
Figure 21. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
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©2015 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FGD5T120SH — 1200 V, 5 A FS Trench IGBT
FGD5T120SH Rev. 1.0
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