To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
© 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138_F085 — N-Channel Logic Level Enhancement Mode Field Effect Transistor
July 2016
BSS138_F085 • Rev. 1.1
BSS138_F085
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect tran-
sistors are produced using Fairchild’s proprietary, high
cell density, DMOS technology. These products have
been designed to minimize on-state resistance while pro-
vide rugged, reliable, and fast switching perfor-
mance.These products are particularly suited for low
voltage, low current applications such as small servo
motor control, power MOSFET gate drivers, and other
switching applications.
Features
• Automotive Qualified
• 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V
RDS(ON) = 6.0Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount
package
Absolute Maximum Rations TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Units Symbol
VDSS Drain-Source Voltage 50 V
VGSS Gate-Source Voltage 20 V
ID
Drain Current – Continuous (Note 1) 0.22 A
– Pulsed 0.88
PD
Maximum Power Dissipation (Note 1) 0.36 W
Derate Above 25C2.8mW/C
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 C
TL
Maximum Lead Temperature for Soldering Purposes,
1/16” from Case for 10 Seconds 300 C
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 350 C/W
Device Marking Device Reel Size Tape width Quantity
SS BSS138_F085 7’’ 8mm 3000 units
SOT-23
© 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138_F085 • Rev. 1.1 2
BSS138_F085 — N-Channel Logic Level Enhancement Mode Field Effect Transistor
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 μA50 V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25°C 72 mV/C
IDSS Zero Gate Voltage Drain Current
VDS = 50V, VGS = 0 V 0.5 μA
VDS = 50V, VGS = 0 V, TJ = 125°C 5 μA
VDS = 30V, VGS = 0 V 100 nA
IGSS Gate–Body Leakage VGS = 20V, VDS = 0 V 100 nA
On Characteristics (Note2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.3 1.5 V
VGS(th)
/ TJ
Gate Threshold Voltage
Temperature Coefficient ID = 1 mA, Referenced to 25°C -2 mV/C
RDS(on) Static Drain–Source On–Resistance
VGS = 10 V, ID = 0.22 A 0.7 3.5
Ω
VGS = 4.5 V, ID = 0.22 A 1.0 6.0
VGS = 10 V, ID = 0.22 A, TJ = 125°C 1.1 5.8
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 0.2 A
gFS Forward Transconductance VDS = 10 V, ID = 0.22 A 0.12 0.5 S
Dynamic Characteristics
Ciss Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
27 pF
Coss Output Capacitance 13 pF
Crss Reverse Transfer Capacitance 6 pF
RGGate Resistance VGS = 15 mV, f = 1.0 MHz 9Ω
Switching Characteristics (Note2)
td(on) Turn-On Delay Time
VDD = 30 V, ID = 0.29 A,
VGS = 10 V, RGEN = 6 Ω
2.8 5.8 ns
trTurn-On Rise Time 2.1 4.4 ns
td(off) Turn-Off Delay Time 9.6 19.2 ns
tfTurn-Off Fall Time 8.4 16.8 ns
QgTotal Gate Charge
VDS = 25 V, ID = 0.22 A,
VGS = 10 V
1.7 2.4 nC
Qgs Gate-Source Charge 0.1 nC
Qgd Gate-Drain Charge 0.4 nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current 0.22 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 0.44 A (Note 2) 0.8 1.4 V
Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RJC is guaranteed by design while RJA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤ 2.0%.
© 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138_F085 • Rev. 1.1 3
BSS138_F085 — N-Channel Logic Level Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with
Temperature Gate-to-Source Voltage
Figure 5. Transfer Characteristics Figure 5. Body Diode Forward Voltage Variation
with Source Current and Temperature
© 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138_F085 • Rev. 1.1 4
BSS138_F085 — N-Channel Logic Level Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1a
Transient thermal response will change depending on the circuit board design
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC