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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BSS138_F085 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. * Automotive Qualified * 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V RDS(ON) = 6.0 @ VGS = 4.5 V * High density cell design for extremely low RDS(ON) * Rugged and Reliable * Compact industry standard SOT-23 surface mount package SOT-23 Absolute Maximum Rations Symbol TA = 25C unless otherwise noted Parameter Units Symbol VDSS Drain-Source Voltage 50 V VGSS Gate-Source Voltage 20 V Drain Current - Continuous ID (Note 1) 0.22 - Pulsed 0.88 Maximum Power Dissipation PD (Note 1) Derate Above 25C A 0.36 W 2.8 mW/C TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 C 350 C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RJA (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SS BSS138_F085 7'' 8mm 3000 units (c) 2016 Fairchild Semiconductor Corporation BSS138_F085 * Rev. 1.1 www.fairchildsemi.com BSS138_F085 -- N-Channel Logic Level Enhancement Mode Field Effect Transistor July 2016 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, BVDSS / TJ Breakdown Coefficient ID = 250 A, Referenced to 25C Voltage Temperature ID = 250 A VDS = 50V, IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics VDS = 50V, 50 V 72 VGS = 0 V VGS = 0 V, TJ = 125C mV/C 0.5 A 5 A VDS = 30V, VGS = 0 V 100 nA VGS = 20V, VDS = 0 V 100 nA ID = 1 mA 1.5 V (Note2) VGS(th) Gate Threshold Voltage VDS = VGS, 0.8 VGS(th) / TJ Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25C -2 VGS = 10 V, ID = 0.22 A 0.7 3.5 RDS(on) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.22 A 1.0 6.0 1.1 5.8 VGS = 10 V, ID = 0.22 A, TJ = 125C ID(on) gFS On-State Drain Current VGS = 10 V, VDS = 5 V 0.2 Forward Transconductance VDS = 10 V, ID = 0.22 A 0.12 VDS = 25 V, f = 1.0 MHz VGS = 0 V, 1.3 mV/C A 0.5 S 27 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VGS = 15 mV, f = 1.0 MHz 13 pF 6 pF 9 (Note2) td(on) Turn-On Delay Time 2.8 5.8 ns tr Turn-On Rise Time 2.1 4.4 ns td(off) Turn-Off Delay Time 9.6 19.2 ns tf Turn-Off Fall Time 8.4 16.8 ns Qg Total Gate Charge 1.7 2.4 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, VGS = 10 V, ID = 0.29 A, RGEN = 6 VDS = 25 V, VGS = 10 V ID = 0.22 A, 0.1 nC 0.4 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.44 A (Note 2) 0.8 0.22 A 1.4 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 350C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (c) 2016 Fairchild Semiconductor Corporation BSS138_F085 * Rev. 1.1 www.fairchildsemi.com 2 BSS138_F085 -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature Gate-to-Source Voltage Figure 5. Body Diode Forward Voltage Variation Figure 5. Transfer Characteristics with Source Current and Temperature (c) 2016 Fairchild Semiconductor Corporation BSS138_F085 * Rev. 1.1 www.fairchildsemi.com 3 BSS138_F085 -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Performance Characteristics Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1a Transient thermal response will change depending on the circuit board design (c) 2016 Fairchild Semiconductor Corporation BSS138_F085 * Rev. 1.1 www.fairchildsemi.com 4 BSS138_F085 -- N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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