4,5mmx3,5mm
ActualSize
1
FEATURES DESCRIPTION
STAT1
IN
IN
PG
VCC
TTCorCMODE
ISET1
ISET2
STAT2orNC
PGND
PGND
CE
SNS
BAT
CELLSorFBorNC
TS
OUT
OUT
VTSB
VSS
20
1
11
10
2
3
4
5
6
7
8
9
19
18
17
16
15
14
13
12
APPLICATIONS
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENTIC WITH INTEGRATED POWER FETs ( bqSWITCHER™)
23
•Ideal For Highly Efficient Charger Designs For
The bqSWITCHER™ series are highly integratedSingle-, Two- or Three-Cell Li-Ion and
Li-ion and Li-polymer switch-mode chargeLi-Polymer Battery Packs
management devices targeted at a wide range ofportable applications. The bqSWITCHER™ series•bq24105 Also for LiFePO
4
Battery (see Using
offers integrated synchronous PWM controller andbq24105 to Charge the LiFePO
4
Battery)
power FETs, high-accuracy current and voltage•Integrated Synchronous Fixed-Frequency
regulation, charge preconditioning, charge status, andPWM Controller Operating at 1.1 MHz With 0%
charge termination, in a small, thermally enhancedto 100% Duty Cycle
QFN package. The system-controlled versionprovides additional inputs for full charge management•Integrated Power FETs For Up To 2-A Charge
under system control.Rate
•High-Accuracy Voltage and Current Regulation The bqSWITCHER charges the battery in threephases: conditioning, constant current, and constant•Available In Both Stand-Alone (Built-In Charge
voltage. Charge is terminated based on user-Management and Control) and
selectable minimum current level. A programmableSystem-Controlled (Under System Command)
charge timer provides a safety backup for chargeVersions
termination. The bqSWITCHER automatically restarts•Status Outputs For LED or Host Processor
the charge cycle if the battery voltage falls below anInterface Indicates Charge-In-Progress, Charge
internal threshold. The bqSWITCHER automaticallyenters sleep mode when V
CC
supply is removed.Completion, Fault, and AC-Adapter PresentConditions
RHL PACKAGE•20-V Maximum Voltage Rating on IN and OUT
(TOP VIEW)(bq24100, 03, 03A, 04, 05, 08, 09, 13, 13A, 15)Pins
•High-Side Battery Current Sensing•Battery Temperature Monitoring•Automatic Sleep Mode for Low PowerConsumption
•System-Controlled Version Can Be Used InNiMH and NiCd Applications•Reverse Leakage Protection Prevents BatteryDrainage
•Thermal Shutdown and Protection•Built-In Battery Detection•Available in 20-Pin, 3,5 mm × 4,5 mm QFNPackage
•Handheld Products•Portable Media Players•Industrial and Medical Equipment•Portable Equipment
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2bqSWITCHER, PowerPAD are trademarks of Texas Instruments.3All other trademarks are the property of their respective owners.
UNLESS OTHERWISE NOTED this document contains
Copyright © 2004 – 2008, Texas Instruments IncorporatedPRODUCTION DATA information current as of publication date.Products conform to specifications per the terms of TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
ABSOLUTE MAXIMUM RATINGS
(1)
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ..................................................................................................................................................
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
(1)
T
J
CHARGE REGULATION VOLTAGE (V) INTENDED APPLICATION PART NUMBER
(2) (3)
MARKINGS
bq24100RHLR CIA4.2 V Stand-alone
bq24100RHLT CIAbq24103RHLR CID1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) Stand-alone
bq24103RHLT CIDbq24103ARHLR CKO1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) Stand-alone
bq24103ARHLT CKObq24104RHLR NXW1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V)
Stand-alone(Blinking status pins)
bq24104RHLT NXWbq24105RHLR CIF– 40 ° C to 125 ° C Externally programmable (2.1 V to 15.5 V) Stand-alone
bq24105RHLT CIFbq24108RHLR CIU4.2 V (Blinking status pins) Stand-alone
bq24109RHLR CDYbq24113RHLR CIJ1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) System-controlled
bq24113RHLT CIJbq24113ARHLR CKF1 or 2 cells selectable (CELLS pin, 4.2 V or 8.4 V) System-controlled
bq24113ARHLT CKFbq24115RHLR CILExternally programmable (2.1 V to 15.5 V) System-controlled
bq24115RHLT CIL
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIWeb site at www.ti.com .(2) The RHL package is available in the following options:T– taped and reeled in quantities of 250 devices per reelR– taped and reeled in quantities of 3000 devices per reel(3) This product is RoHS-compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable foruse in specified lead-free soldering processes.
over operating free-air temperature range (unless otherwise noted)
UNIT
Supply voltage range (with respect to V
SS
) IN, VCC 20 VSTAT1, STAT2, PG, CE, CELLS, SNS, BAT – 0.3 V to 20 VOUT – 0.7 V to 20 VInput voltage range (with respect to V
SS
and PGND) CMODE, TS, TTC 7 VVTSB 3.6 VISET1, ISET2 3.3 VVoltage difference between SNS and BAT inputs (V
SNS
– V
BAT
) ± 1 VOutput sink STAT1, STAT2, PG 10 mAOutput current (average) OUT 2.2 AT
A
Operating free-air temperature range – 40 ° C to 85 ° CT
J
Junction temperature range – 40 ° C to 125 ° CT
stg
Storage temperature – 65 ° C to 150 ° CLead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 ° C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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PACKAGE DISSIPATION RATINGS
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
VIREG +1V
RSET1 1000,
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
T
A
< 40 ° C DERATING FACTORPACKAGE θ
JA
θ
JC
POWER RATING ABOVE T
A
= 40 ° C
RHL
(1)
46.87 ° C/W 2.5 ° C/W 1.81 W 0.021 W/ ° C
(1) This data is based on using the JEDEC High-K board, and the exposed die pad is connected to a copper pad on the board. This isconnected to the ground plane by a 2x3 via matrix.
MIN NOM MAX UNIT
Supply voltage, V
CC
and IN (Tie together) 4.35
(1)
16
(2)
VOperating junction temperature range, T
J
– 40 125 ° C
(1) The IC continues to operate below V
min
, to 3.5 V, but the specifications are not tested and not specified.(2) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the IN or OUT pins. A tight layoutminimizes switching noise.
T
J
= 0 ° C to 125 ° C and recommended supply voltage range (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT CURRENTS
V
CC
> V
CC(min)
, PWM switching 10
mAI
(VCC)
V
CC
supply current V
CC
> V
CC(min)
, PWM NOT switching 5
V
CC
> V
CC(min)
, CE = HIGH 315 µA
0 ° C ≤T
J
≤65 ° C, V
I(BAT)
= 4.2 V,
3.5V
CC
< V
(SLP)
or V
CC
> V
(SLP)
but not in charge
Battery discharge sleep current, (SNS, 0 ° C ≤T
J
≤65 ° C, V
I(BAT)
= 8.4 V,I
(SLP)
5.5 µABAT, OUT, FB pins) V
CC
< V
(SLP)
or V
CC
> V
(SLP)
but not in charge
0 ° C ≤T
J
≤65 ° C, V
I(BAT)
= 12.6 V,
7.7V
CC
< V
(SLP)
or V
CC
> V
(SLP)
but not in charge
VOLTAGE REGULATION
CELLS = Low, in voltage regulation 4.2Output voltage, bq24103/03A/04/13/13AV
OREG
CELLS = High, in voltage regulation 8.4 V
Output voltage, bq24100/08/09 Operating in voltage regulation 4.2
Feedback regulation REF for bq24105/15V
IBAT
I
IBAT
= 25 nA typical into pin 2.1 Vonly (W/FB)
T
A
= 25 ° C – 0.5% 0.5%Voltage regulation accuracy
– 1% 1%
CURRENT REGULATION - FAST CHARGE
V
LOWV
≤V
I(BAT)
< V
OREG
,I
OCHARGE
Output current range of converter 150 2000 mAV
(VCC)
- V
I(BAT)
> V
(DO-MAX)
100 mV ≤V
IREG
≤200 mV,
V
IREG
Voltage regulated across R
(SNS)
Accuracy – 10% 10%Programmed Where5 k Ω ≤ RSET1 ≤10 k Ω, Select RSET1 toprogram V
IREG
,V
IREG(measured)
= I
OCHARGE
+ R
SNS( – 10% to 10% excludes errors due to RSET1and R
(SNS)
tolerances)
V
(LOWV)
≤V
I(BAT)
≤V
O(REG)
,V
(ISET1)
Output current set voltage 1 VV
(VCC)
≤V
I(BAT)
×
V(DO-MAX)
V
LOWV
≤V
I(BAT)
< V
O(REG)
,K
(ISET1)
Output current set factor 1000 V/AV
(VCC)
≤V
I(BAT)
+
V(DO-MAX)
PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION
Precharge to fast-charge transition voltageV
LOWV
threshold, BAT, 68 71.4 75 %V
O(REG)bq24100/03/03A/04/05/08/09 ICs only
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VIREG*PRE +0.1V
RSET2 1000,
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ..................................................................................................................................................
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ELECTRICAL CHARACTERISTICS (continued)T
J
= 0 ° C to 125 ° C and recommended supply voltage range (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Deglitch time for precharge to fast charge Rising voltage;t 20 30 40 mstransition, t
RISE
, t
FALL
= 100 ns, 2-mV overdrive
I
OPRECHG
Precharge range V
I(BAT)
< V
LOWV
, t < t
PRECHG
15 200 mA
V
(ISET2)
Precharge set voltage, ISET2 V
I(BAT)
< V
LOWV
, t < t
PRECHG
100 mV
K
(ISET2)
Precharge current set factor 1000 V/A
100 mV ≤V
IREG-PRE
≤100 mV,
V
IREG-PRE
Voltage regulated across R
SNS
-Accuracy – 20% 20%(PGM) Where1.2 k Ω ≤ RSET2 ≤10 k Ω, Select RSET1to program V
IREG-PRE,V
IREG-PRE
(Measured) = I
OPRE-CHG
× R
SNS( – 20% to 20% excludes errors due to RSET1and R
SNS
tolerances)
CHARGE TERMINATION (CURRENT TAPER) DETECTION
I
TERM
Charge current termination detection range V
I(BAT)
> V
RCH
15 200 mA
Charge termination detection set voltage,V
TERM
V
I(BAT)
> V
RCH
100 mVISET2
K
(ISET2)
Termination current set factor 1000 V/A
Charger termination accuracy V
I(BAT)
> V
RCH
– 20% 20%
Both rising and falling,t
dg-TERM
Deglitch time for charge termination 20 30 40 ms2-mV overdrive t
RISE
, t
FALL
= 100 ns
TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR
%
LTF
Cold temperature threshold, TS, % of bias V
LTF
= V
O(VTSB)
× % LTF/100 72.8% 73.5% 74.2%
%
HTF
Hot temperature threshold, TS, % of bias V
HTF
= V
O(VTSB)
× % HTF/100 33.7% 34.4% 35.1%
Cutoff temperature threshold, TS, % of%
TCO
V
TCO
= V
O(VTSB)
× % TCO/100 28.7% 29.3% 29.9%bias
LTF hysteresis 0.5% 1% 1.5%
Deglitch time for temperature fault, TS 20 30 40Both rising and falling,t
dg-TS
msDeglitch time for temperature fault, TS,
2-mV overdrive t
RISE
, t
FALL
= 100 ns
500bq24109, bq24104
V
CC
> V
IN(min)
,V
O(VTSB)
TS bias output voltage 3.15 VI
(VTSB)
= 10 mA 0.1 µF≤C
O(VTSB)
≤1µF
V
CC
>
IN(min)
,V
O(VTSB)
TS bias voltage regulation accuracy – 10% 10%I
(VTSB)
= 10 mA 0.1 µF≤C
O(VTSB)
≤1µF
BATTERY RECHARGE THRESHOLD
V
RCH
Recharge threshold voltage Below V
OREG
75 100 125 mV/cell
V
I(BAT)
< decreasing below threshold,t
dg-RCH
Deglitch time 20 30 40 mst
FALL
= 100 ns 10-mV overdrive
STAT1, STAT2, AND PG OUTPUTS
V
OL(STATx)
Low-level output saturation voltage, STATx I
O
= 5 mA 0.5
VV
OL( PG)
Low-level output saturation voltage, PG I
O
= 10 mA 0.1
CE CMODE, CELLS INPUTS
V
IL
Low-level input voltage I
IL
= 5 µA 0 0.4
VV
IH
High-level input voltage I
IH
= 20 µA 1.3 V
CC
TTC INPUT
t
PRECHG
Precharge timer 1440 1800 2160 s
t
CHARGE
Programmable charge timer range t
(CHG)
= C
(TTC)
× K
(TTC)
25 572 minutes
Charge timer accuracy 0.01 µF≤C
(TTC)
≤0.18 µF -10% 10%
K
TTC
Timer multiplier 2.6 min/nF
C
TTC
Charge time capacitor range 0.01 0.22 µF
V
TTC_EN
TTC enable threshold voltage V
(TTC)
rising 200 mV
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
ELECTRICAL CHARACTERISTICS (continued)T
J
= 0 ° C to 125 ° C and recommended supply voltage range (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SLEEP COMPARATOR
V
CC
≤V
IBAT
V
CC
≤V
IBAT2.3 V ≤V
I(OUT)
≤V
OREG,
for 1 or 2 cells
+5 mV +75 mVV
SLP-ENT
Sleep-mode entry threshold VV
I(OUT)
= 12.6 V, R
IN
= 1 k ΩV
CC
≤V
IBAT
V
CC
≤V
IBATbq24105/15
(1)
-4 mV +73 mV
V
SLP-EXIT
Sleep-mode exit hysteresis, 2.3 V ≤V
I(OUT)
≤V
OREG
40 160 mV
V
CC
decreasing below threshold,t
FALL
= 100 ns, 10-mV overdrive, 5 µsPMOS turns offt
dg-SLP
Deglitch time for sleep mode
V
CC
decreasing below threshold,t
FALL
= 100 ns, 10-mV overdrive, 20 30 40 msSTATx pins turn off
UVLO
V
UVLO-ON
IC active threshold voltage V
CC
rising 3.15 3.30 3.50 V
IC active hysteresis V
CC
falling 120 150 mV
PWM
7 V ≤V
CC
≤V
CC(max)
400Internal P-channel MOSFET on-resistance
4.5 V ≤V
CC
≤7 V 500
mΩ7 V ≤V
CC
≤V
CC(max)
130Internal N-channel MOSFET on-resistance
4.5 V ≤V
CC
≤7 V 150
f
OSC
Oscillator frequency 1.1 MHz
Frequency accuracy – 9% 9%
D
MAX
Maximum duty cycle 100%
D
MIN
Minimum duty cycle 0%
t
TOD
Switching delay time (turn on) 20 ns
t
syncmin
Minimum synchronous FET on time 60 ns
Synchronous FET minimum current-off
50 400 mAthreshold
(2)
BATTERY DETECTION
Battery detection current during time-outI
DETECT
V
I(BAT)
< V
OREG
– V
RCH
2 mAfault
I
DISCHRG1
Discharge current V
SHORT
< V
I(BAT)
< V
OREG
– V
RCH
400 µA
t
DISCHRG1
Discharge time V
SHORT
< V
I(BAT)
< V
OREG
– V
RCH
1 s
I
WAKE
Wake current V
SHORT
< V
I(BAT)
< V
OREG
– V
RCH
2 mA
t
WAKE
Wake time V
SHORT
< V
I(BAT)
< V
OREG
– V
RCH
0.5 s
Begins after termination detected,I
DISCHRG2
Termination discharge current 400 µAV
I(BAT)
≤V
OREG
t
DISCHRG2
Termination time 262 ms
OUTPUT CAPACITOR
Required output ceramic capacitor rangeC
OUT
from SNS to PGND, between inductor and 4.7 10 47 µFR
SNS
Required SNS capacitor (ceramic) at SNSC
SNS
0.1 µFpin
PROTECTION
Threshold over V
OREG
to turn off P-channelV
OVP
OVP threshold voltage MOSFET, STAT1, and STAT2 during charge 110 117 121 %V
O(REG)or termination states
I
LIMIT
Cycle-by-cycle current limit 2.6 3.6 4.5 A
V
SHORT
Short-circuit voltage threshold, BAT V
I(BAT)
falling 1.95 2 2.05 V/cell
I
SHORT
Short-circuit current V
I(BAT)
≤V
SHORT
35 65 mA
T
SHTDWN
Thermal trip 165 ° C
Thermal hysteresis 10 ° C
(1) For bq24105 and bq24115 only. R
IN
is connected between IN and PGND pins and needed to ensure sleep entry.(2) N-channel always turns on for ~60 ns and then turns off if current is too low.
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SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ..................................................................................................................................................
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TERMINAL FUNCTIONSTERMINAL
bq24100, bq24103,
I/O DESCRIPTIONbq24113,NAME bq24108, bq24103A bq24105 bq24115bq24113Abq24109 bq24104
Battery voltage sense input. Bypass it with a 0.1 µF capacitor to PGND ifBAT 14 14 14 14 14 I
there are long inductive leads to battery.
Charger enable input. This active low input, if set high, suspends chargeCE 16 16 16 16 16 I and places the device in the low-power sleep mode. Do not pull up thisinput to VTSB.
Available on parts with fixed output voltage. Ground or float for single-cellCELLS 13 13 I operation (4.2 V). For two-cell operation (8.4 V) pull up this pin with aresistor to V
CC
.
Charge mode selection: low for precharge as set by ISET2 pin and highCMODE 7 7 I
(pull up to VTSB or < 7 V) for fast charge as set by ISET1.
Output voltage analog feedback adjustment. Connect the output of aFB 13 13 I resistive voltage divider powered from the battery terminals to this node toadjust the output battery voltage regulation.
IN 3, 4 3, 4 3, 4 3, 4 3, 4 I Charger input voltage.
Charger current set point 1 (fast charge). Use a resistor to ground to setISET1 8 8 8 8 8 I/O
this value.
Charge current set point 2 (precharge and termination), set by a resistorconnected to ground. A low-level CMODE signal selects the ISET2 chargeISET2 9 9 9 9 9 I/O
rate, but if the battery voltage reaches the regulation set point,bqSWITCHER changes to voltage regulation regardless of CMODE input.
N/C 13 19 19 - No connection. This pin must be left floating in the application.
1 1 1 1 1 O Charge current output inductor connection. Connect a zener TVS diodeOUT between OUT pin and PGND pin to clamp the voltage spike to protect the20 20 20 20 20 O
power MOSFETs during abnormal conditions.
Power-good status output (open drain). The transistor turns on when aPG 5 5 5 5 5 O valid V
CC
is detected. It is turned off in the sleep mode. PG can be used todrive a LED or communicate with a host processor.
PGND 17,18 17,18 17,18 17,18 17, 18 Power ground input
Charge current-sense input. Battery current is sensed via the voltage dropSNS 15 15 15 15 15 I developed on this pin by an external sense resistor in series with thebattery pack. A 0.1- µF capacitor to PGND is required.
Charge status 1 (open-drain output). When the transistor turns onSTAT1 2 2 2 2 2 O indicates charge in process. When it is off and with the condition of STAT2indicates various charger conditions (See Table 1 )
Charge status 2 (open-drain output). When the transistor turns onSTAT2 19 19 19 O indicates charge is done. When it is off and with the condition of STAT1indicates various charger conditions (See Table 1 )
Temperature sense input. This input monitors its voltage against aninternal threshold to determine if charging is allowed. Use an NTCTS 12 12 12 12 12 I
thermistor and a voltage divider powered from VTSB to develop thisvoltage. (See Figure 10 )
Timer and termination control. Connect a capacitor from this node to GNDTTC 7 7 7 I to set the bqSWITCHER timer. When this input is low, the timer andtermination detection are disabled.
VCC 6 6 6 6 6 I Analog device input. A 0.1 µF capacitor to VSS is required.
VSS 10 10 10 10 10 Analog ground input
TS internal bias regulator voltage. Connect capacitor (with a valueVTSB 11 11 11 11 11 O
between a 0.1- µF and 1- µF) between this output and VSS.
There is an internal electrical connection between the exposed thermalpad and VSS. The exposed thermal pad must be connected to the sameExposed
potential as the VSS pin on the printed circuit board. The power pad canThermal Pad Pad Pad Pad Pad
be used as a star ground connection between V
SS
and PGND. A commonPad
ground plane may be used. VSS pin must be connected to ground at alltimes.
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
TYPICAL APPLICATION CIRCUITS
3IN
4IN
6VCC
2STAT1
19STAT2
5PG
7 TTC
16CE
10VSS
13NC
OUT 1
OUT 20
PGND17
PGND18
SNS15
BAT 14
ISET18
ISET29
TS12
VTSB11
VIN
LOUT
CIN COUT
RSNS
0.1W
1.5KW1.5KW1.5KW
Charge
DoneAdapter
Present
7.5KW
7.5KW
9.31KW
442KW
RT1
103AT
Battery
Pack
Pack-
Pack+
0.1 Fm
0.1 Fm
0.1 Fm
0.1 Fm
10 Fm
10 Hm
10 Fm
BQ24100
RISET2
RISET1
RT2
CTTC
VTSB
MMBZ18VALT1
D1
3IN
4IN
6VCC
2STAT1
19STAT2
5PG
7 TTC
16CE
10VSS
13CELLS
OUT 1
OUT 20
PGND17
PGND18
SNS15
BAT 14
ISET18
ISET29
TS12
VTSB11
VIN
CIN COUT
RSNS
0.1W
1.5KW1.5KW1.5KW
Charge
DoneAdapter
Present
7.5KW
7.5KW
9.31KW
442KW
RT1
103AT
Battery
Pack
Pack-
Pack+
0.1 Fm
0.1 Fm
0.1 Fm
0.1 Fm
10 Fm
10 Hm
10kW
10 Fm
BQ24103
BQ24104
RISET2
RISET1
VIN
LOUT
CTTC
RT2
VTSB
MMBZ18VALT1
(seeNote A)
D1
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
Figure 1. Stand-Alone 1-Cell Application
A. Zener diode not needed for bq24103A and bq24104.
Figure 2. Stand-Alone 2-Cell Application
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
3IN
4IN
6VCC
2STAT1
19STAT2
5PG
7 TTC
16CE
10VSS
13FB
OUT 1
OUT 20
PGND17
PGND18
SNS15
BAT 14
ISET18
ISET29
TS12
VTSB11
VIN
L
CTTC
CIN COUT
RSNS
0.1W
1.5KW1.5KW1.5KW
Charge
DoneAdapter
Present
7.5KW
7.5KW
9.31KW
442KW
RT1
103AT
Battery
Pack
Pack-
Pack+
0.1 Fm
0.1 Fm
0.1 Fm
0.1 Fm
10 Fm
10 Hm
10 Fm
BQ24105
RISET2
RISET1
100KW
301KW
RT2
VTSB
OUT
MMBZ18VALT1
D1
3IN
4IN
6VCC
2STAT1
19NC
5PG
7CMODE
16CE
10VSS
13CELLS
OUT 1
OUT 20
PGND17
PGND18
SNS15
BAT 14
ISET18
ISET29
TS12
VTSB11
VIN
LOUT
CIN COUT
RSNS
0.1W
7.5KW
7.5KW
9.31KW
442KW
VTSB
103AT
Battery
Pack
Pack-
Pack+
0.1 Fm
0.1 Fm
0.1 Fm
10 Fm
10 Hm
10 Fm
BQ24113,
BQ24113A
RISET2
RISET1
RT1
RT2
TOHOSTCONTROLLER
MMBZ18VALT1
(seeNote A)
D1
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ..................................................................................................................................................
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TYPICAL APPLICATION CIRCUITS (continued)
Figure 3. Stand-Alone 2-Cell Application
A. Zener diode not needed for bq24113A.
Figure 4. System-Controlled Application
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
TYPICAL OPERATING PERFORMANCE
I -ChargeCurrent- A
(BAT)
Efficiency-%
0
80
0.5 1 1.5 2
50
60
70
100
90
V =4.2V
(BAT)
1-Cell
V =16V
I
V =5V
I
I -ChargeCurrent- A
(BAT)
Efficiency-%
V =8.4V
(BAT)
2-Cell
V =9V
I
0
80
0.5 1 1.5 2
50
60
70
100
90
V =16V
I
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
EFFICIENCY EFFICIENCYvs vsCHARGE CURRENT CHARGE CURRENT
Figure 5. Figure 6.
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bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ..................................................................................................................................................
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FUNCTIONAL BLOCK DIAGRAM
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
OPERATIONAL FLOW CHART
Battery
Detect?
TS Pin
in LTF to HTF
Range? Indicate CHARGE
SUSPEND
No
VBAT<VLOWV Yes
No
VBAT<VLOWV
T30min
Expired? No
Yes
Indicate Fault
Battery
Replaced?
(Vbat < Vrch?)
Yes
No
Yes
FSTCHG Timer
Expired?
No
Suspend Charge
Indicate Charge-
In-Progress
Regulate
IPRECHG
Indicate Charge-
In-Progress
Regulate
Current or Voltage
Indicate BATTERY
ABSENT
Check for Battery
Presence
No
Reset and Start
T30min timer
TS pin
in LTF to TCO
range? Indicate CHARGE
SUSPEND
No
Suspend Charge
POR
Yes
Yes
Reset and Start
FSTCHG timer
TS Pin
in LTF to TCO
Range?
ITERM detection?
Yes
Yes
VBAT < VRCH?No Indicate DONE
Charge Complete
Yes
VBAT<VLOWV
No
No
- Fault Condition
- Enable IDETECT
No
Yes
Yes
TS pin
in LTF to HTF
range?
No
TS pin
in LTF to HTF
range?
Indicate CHARGE
SUSPEND
Suspend Charge
No
No
Indicate Charge-
In-Progress
- Turn Off Charge
- Enable IDISCHG for
tDISCHG2
Indicate BATTERY
ABSENT
Battery Removed
Yes
Yes
Yes
*
*NOTE: If the TTC pin is
pulled low, the safety timer
and termination are
disabled; the charger
continues to regulate, and
the STAT pins indicate
charge in progress.
If the TTC pin is pulled high
(VTSB), only the safety
timer is disabled
(termination is normal).
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
Figure 7. Stand-Alone Version Operational Flow Chart
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
Vcc > VI(BAT)
Checked at All
CMODE=Low Yes
No
No
Yes
Indicate Charge-
In-Progress
Regulate
IO(PRECHG)
Indicate Charge-
In-Progress
Regulate Current
or Voltage
No
POR
Yes
/CE=High
CMODE=Low
No
Yes
Indicate DONE
Turn Off Charge
Indicate SLEEP
MODE
SLEEP MODE
CMODE=High
No
Yes
/CE=Low
Yes
Yes
No
/CE=Low
Yes
No
/CE=High
No
or
VIBAT in VREG
Yes
Yes
Times
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ..................................................................................................................................................
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Figure 8. System-Controlled Operational Flow Chart
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
DETAILED DESCRIPTION
UDG-04037
VLOW
Charge Voltage
Charge Current
Regulation Voltage
Regulation Current
VSHORT
Voltage Regulation and
Charge Termination Phase
Precharge
Timer Programmable
Safety Timer
Current Regulation Phase
Precharge
Phase
Precharge
and Termination
ISHORT
PWM Controller
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
The bqSWITCHER™ supports a precision Li-ion or Li-polymer charging system for one-, two-, or three-cellapplications. See Figure 7 and Figure 8 for a typical charge profile.
Figure 9. Typical Charging Profile
The bq241xx provides an integrated fixed 1MHz frequency voltage-mode controller with Feed-Forward functionto regulate charge current or voltage. This type of controller is used to help improve line transient response,thereby simplifying the compensation network used for both continuous and discontinuous current conductionoperation. The voltage and current loops are internally compensated using a Type-III compensation scheme thatprovides enough phase boost for stable operation, allowing the use of small ceramic capacitors with very lowESR. There is a 0.5V offset on the bottom of the PWM ramp to allow the device to operate between 0% to 100%duty cycle.
The internal PWM gate drive can directly control the internal PMOS and NMOS power MOSFETs. The high-sidegate voltage swings from V
CC
(when off), to V
CC
-6 (when on and V
CC
is greater than 6V) to help reduce theconduction losses of the converter by enhancing the gate an extra volt beyond the standard 5V. The low-sidegate voltage swings from 6V, to turn on the NMOS, down to PGND to turn it off. The bq241xx has two back toback common-drain P-MOSFETs on the high side. An input P-MOSFET prevents battery discharge when IN islower than BAT. The second P-MOSFET behaves as the switching control FET, eliminating the need of abootstrap capacitor.
Cycle-by-cycle current limit is sensed through the internal high-side sense FET. The threshold is set to a nominal3.6A peak current. The low-side FET also has a current limit that decides if the PWM Controller will operate insynchronous or non-synchronous mode. This threshold is set to 100mA and it turns off the low-side NMOSbefore the current reverses, preventing the battery from discharging. Synchronous operation is used when thecurrent of the low-side FET is greater than 100mA to minimize power losses.
Copyright © 2004 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
Temperature Qualification
RT2=
V RTH RTH
O(VTSB) COLD HOT
´ ´ ´ 1
VLTF
1
VHTF
-
RTHHOT ´ - ´RTHCOLD
VO(VTSB)
HTF
V-1
( )
VO(VTSB)
LTF
V-1
( )
1
RT2
1
RTHCOLD
+
VO(VTSB)
LTF
V-1
RT1=
Where:
V =V % /100
LTF O(VTSB) LTF 100¸
V =V % /100
HTF O(VTSB) HTF 100¸
´
´
(1)
Charge Suspend
Temperature Range
to Initiate Charge
Charge Suspend Charge Suspend
Temperature Range
During Charge Cycle
Charge Suspend
V(LTF)
V(HTF)
V(TCO)
VSS
VCC
Battery Preconditioning (Precharge)
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ..................................................................................................................................................
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The bqSWITCHER continuously monitors battery temperature by measuring the voltage between the TS pin andVSS pin. A negative temperature coefficient thermistor (NTC) and an external voltage divider typically developthis voltage. The bqSWITCHER compares this voltage against its internal thresholds to determine if charging isallowed. To initiate a charge cycle, the battery temperature must be within the V
(LTF)
-to-V
(HTF)
thresholds. Ifbattery temperature is outside of this range, the bqSWITCHER suspends charge and waits until the batterytemperature is within the V
(LTF)
-to-V
(HTF)
range. During the charge cycle (both precharge and fast charge), thebattery temperature must be within the V
(LTF)
-to-V
(TCO)
thresholds. If battery temperature is outside of this range,the bqSWITCHER suspends charge and waits until the battery temperature is within the V
(LTF)
-to-V
(HTF)
range.The bqSWITCHER suspends charge by turning off the PWM and holding the timer value (i.e., timers are notreset during a suspend condition). Note that the bias for the external resistor divider is provided from the VTSBoutput. Applying a constant voltage between the V
(LTF)
-to-V
(HTF)
thresholds to the TS pin disables thetemperature-sensing feature.
Figure 10. TS Pin Thresholds
On power up, if the battery voltage is below the V
LOWV
threshold, the bqSWITCHER applies a precharge current,I
PRECHG
, to the battery. This feature revives deeply discharged cells. The bqSWITCHER activates a safety timer,t
PRECHG
, during the conditioning phase. If the V
LOWV
threshold is not reached within the timer period, thebqSWITCHER turns off the charger and enunciates FAULT on the STATx pins. In the case of a FAULTcondition, the bqSWITCHER reduces the current to I
DETECT
. I
DETECT
is used to detect a battery replacementcondition. Fault condition is cleared by POR or battery replacement.
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IO(PRECHG) +K(ISET2) V(ISET2)
ǒR(ISET2) R(SNS)Ǔ
(2)
Battery Charge Current
R(SNS) +VIREG
IOCHARGE
(3)
RISET1 +KISET1 VISET1
RSNS ICHARGE
(4)
Battery Voltage Regulation
OREG
IBAT
(R1 + R2)
V = R2 x V
(5)
RCH
(R1 + R2)
V = R2 x 50 mV
(6)
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
The magnitude of the precharge current, I
O(PRECHG)
, is determined by the value of programming resistor, R
(ISET2)
,connected to the ISET2 pin.
where
R
SNS
is the external current-sense resistorV
(ISET2)
is the output voltage of the ISET2 pinK
(ISET2)
is the V/A gain factorV
(ISET2)
and K
(ISET2)
are specified in the Electrical Characteristics table.
The battery charge current, I
O(CHARGE)
, is established by setting the external sense resistor, R
(SNS)
, and theresistor, R
(ISET1)
, connected to the ISET1 pin.
In order to set the current, first choose R
(SNS)
based on the regulation threshold V
IREG
across this resistor. Thebest accuracy is achieved when the V
IREG
is between 100mV and 200mV.
If the results is not a standard sense resistor value, choose the next larger value. Using the selected standardvalue, solve for V
IREG
. Once the sense resistor is selected, the ISET1 resistor can be calculated using thefollowing equation:
The voltage regulation feedback occurs through the BAT pin. This input is tied directly to the positive side of thebattery pack. The bqSWITCHER monitors the battery-pack voltage between the BAT and VSS pins. ThebqSWITCHER is offered in a fixed single-cell voltage version (4.2 V) and as a one-cell or two-cell versionselected by the CELLS input. A low or floating input on the CELLS selects single-cell mode (4.2 V) while ahigh-input through a resistor selects two-cell mode (8.4 V).
For the bq24105 and bq24115, the output regulation voltage is specified as:
where R1 and R2 are resistor divider from BAT to FB and FB to VSS, respectively.
The bq24105 and bq24115 recharge threshold voltage is specified as:
Copyright © 2004 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
Charge Termination and Recharge
ITERM +K(ISET2) VTERM
ǒR(ISET2) R(SNS)Ǔ
(7)
tCHARGE +C(TTC) K(TTC)
(8)
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ..................................................................................................................................................
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The bqSWITCHER monitors the charging current during the voltage regulation phase. Once the terminationthreshold, I
TERM
, is detected, the bqSWITCHER terminates charge. The termination current level is selected bythe value of programming resistor, R
(ISET2)
, connected to the ISET2 pin.
where
R
(SNS)
is the external current-sense resistorV
TERM
is the output of the ISET2 pinK
(ISET2)
is the A/V gain factorV
TERM
and K
(ISET2)
are specified in the Electrical Characteristics table
As a safety backup, the bqSWITCHER also provides a programmable charge timer. The charge time isprogrammed by the value of a capacitor connected between the TTC pin and GND by the following formula:
where
C
(TTC)
is the capacitor connected to the TTC pinK
(TTC)
is the multiplier
A new charge cycle is initiated when one of the following conditions is detected:•The battery voltage falls below the V
RCH
threshold.•Power-on reset (POR), if battery voltage is below the V
RCH
threshold•CE toggle•TTC pin, described as follows.
In order to disable the charge termination and safety timer, the user can pull the TTC input below the V
TTC_ENthreshold. Going above this threshold enables the termination and safety timer features and also resets the timer.Tying TTC high disables the safety timer only.
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
Sleep Mode
Charge Status Outputs
PG Output
CE Input (Charge Enable)
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
The bqSWITCHER enters the low-power sleep mode if the VCC pin is removed from the circuit. This featureprevents draining the battery during the absence of VCC.
The open-drain STAT1 and STAT2 outputs indicate various charger operations as shown in Table 1 . Thesestatus pins can be used to drive LEDs or communicate to the host processor. Note that OFF indicates that theopen-drain transistor is turned off.
Table 1. Status Pins Summary
Charge State STAT1 STAT2
Charge-in-progress ON OFFCharge complete OFF ONCharge suspend, timer fault, overvoltage, sleep mode, battery absent OFF OFF
Table 2. Status Pins Summary (bq24104, bq24108 and bq24109 only)
Charge State STAT1 STAT2
Battery absent OFF OFFCharge-in-progress ON OFFCharge complete OFF ONBattery over discharge, V
I(BAT)
< V
(SC)
ON/OFF (0.5 Hz) OFFCharge suspend (due to TS pin and internal thermal protection) ON/OFF (0.5 Hz) OFFPrecharge timer fault ON/OFF (0.5 Hz) OFFFast charge timer fault ON/OFF (0.5 Hz) OFFSleep mode OFF OFF
The open-drain PG (power good) indicates when the AC-to-DC adapter (i.e., V
CC
) is present. The output turns onwhen sleep-mode exit threshold, V
SLP-EXIT
, is detected. This output is turned off in the sleep mode. The PG pincan be used to drive an LED or communicate to the host processor.
The CE digital input is used to disable or enable the charge process. A low-level signal on this pin enables thecharge and a high-level V
CC
signal disables the charge. A high-to-low transition on this pin also resets all timersand fault conditions. Note that the CE pin cannot be pulled up to VTSB voltage. This may create power-upissues.
Copyright © 2004 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
Timer Fault Recovery
Output Overvoltage Protection (Applies To All Versions)
Functional Description for System-Controlled Version (bq2411x)
Precharge And Fast-Charge Control
Charge Termination And Safety Timers
Inductor, Capacitor, and Sense Resistor Selection Guidelines
f0+1
2p LOUT COUT
Ǹ
(9)
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008 ..................................................................................................................................................
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As shown in FIGURE 10, bqSWITCHER provides a recovery method to deal with timer fault conditions. Thefollowing summarizes this method.
Condition 1 V
I(BAT)
above recharge threshold (V
OREG
- V
RCH
) and timeout fault occurs.
Recovery method: bqSWITCHER waits for the battery voltage to fall below the recharge threshold. This couldhappen as a result of a load on the battery, self-discharge or battery removal. Once the battery falls below therecharge threshold, the bqSWITCHER clears the fault and enters the battery absent detection routine. A POR orCE toggle also clears the fault.
Condition 2 Charge voltage below recharge threshold (V
OREG
– V
RCH
) and timeout fault occurs
Recovery method: Under this scenario, the bqSWITCHER applies the I
DETECT
current. This small current is usedto detect a battery removal condition and remains on as long as the battery voltage stays below the rechargethreshold. If the battery voltage goes above the recharge threshold, then the bqSWITCHER disables the I
DETECTcurrent and executes the recovery method described in Condition 1. Once the battery falls below the rechargethreshold, the bqSWITCHER clears the fault and enters the battery absent detection routine. A POR or CE togglealso clears the fault.
The bqSWITCHER provides a built-in overvoltage protection to protect the device and other components againstdamages if the battery voltage gets too high, as when the battery is suddenly removed. When an overvoltagecondition is detected, this feature turns off the PWM and STATx pins. The fault is cleared once V
IBAT
drops to therecharge threshold (V
OREG
– V
RCH
).
For applications requiring charge management under the host system control, the bqSWITCHER (bq2411x)offers a number of control functions. The following section describes these functions.
A low-level signal on the CMODE pin forces the bqSWITCHER to charge at the precharge rate set on the ISET2pin. A high-level signal forces charge at fast-charge rate as set by the ISET1 pin. If the battery reaches thevoltage regulation level, V
OREG
, the bqSWITCHER transitions to voltage regulation phase regardless of the statusof the CMODE input.
The charge timers and termination are disabled in the system-controlled versions of the bqSWITCHER. The hostsystem can use the CE input to enable or disable charge. When an overvoltage condition is detected, thecharger process stops, and all power FETs are turned off.
The bqSWITCHER provides internal loop compensation. With this scheme, best stability occurs when LCresonant frequency, f
o
is approximately 16 kHz (8 kHz to 32 kHz). Equation 9 can be used to calculate the valueof the output inductor and capacitor. Table 3 provides a summary of typical component values for various chargerates.
Table 3. Output Components Summary
CHARGE CURRENT 0.5 A 1 A 2 A
Output inductor, L
OUT
22 µH 10 µH 4.7 µHOutput capacitor, C
OUT
4.7 µF 10 µF 22 µF (or 2 × 10 µF) ceramicSense resistor, R
(SNS)
0.2 Ω0.1 Ω0.05 Ω
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
Battery Detection
No
Yes
Yes
BATTERY
PRESENT,
Begin Charge
No BATTERY
PRESENT,
Begin Charge
BATTERY
ABSENT
Yes
Enable
I(DETECT)
for t(DETECT)
VI(BAT)<V(LOWV)
Apply I(WAKE)
for t(WAKE)
POR or VRCH Detection routine runs on power up
and if VBAT drops below refresh
threshold due to removing battery
or discharging battery.
VI(BAT) >
VO(REG)
-VRCH
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
For applications with removable battery packs, bqSWITCHER provides a battery absent detection scheme toreliably detect insertion and/or removal of battery packs.
Figure 11. Battery Absent Detection for bq2410x ICs only
The voltage at the BAT pin is held above the battery recharge threshold, V
OREG
– V
RCH
, by the charged batteryfollowing fast charging. When the voltage at the BAT pin falls to the recharge threshold, either by a load on thebattery or due to battery removal, the bqSWITCHER begins a battery absent detection test. This test involvesenabling a detection current, I
DISCHARGE1
, for a period of t
DISCHARGE1
and checking to see if the battery voltage isbelow the short circuit threshold, V
SHORT
. Following this, the wake current, I
WAKE
is applied for a period of t
WAKEand the battery voltage is checked again to ensure that it is above the recharge threshold. The purpose of thiscurrent is to attempt to close an open battery pack protector, if one is connected to the bqSWITCHER.
Passing both of the discharge and charge tests indicates a battery absent fault at the STAT pins. Failure of eithertest starts a new charge cycle. For the absent battery condition, typically the voltage on the BAT pin rises andfalls between 0V and V
OVP
thresholds indefinitely.
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
tWAKE tDISCHRG1
VOREG
2V/cell
IWAKE
-IDISCHRG1
Yes
Battery
Detected
No
Battery
Detected
No
Battery
Detected
Battery
Connected
VBAT
IBAT
tDISCHRG1
Battery Detection Example
CMAX_DIS +IDISCHRG1 tDISCHRG1
VOREG *VSHORT
CMAX_DIS +400 mA 1s
4.2 V *2 V
CMAX_DIS +182 mF
(10)
CMAX_WAKE +IWAKE tWAKE
ǒVOREG *VRCHǓ*0 V
CMAX_WAKE +2 mA 0.5s
(4.2 V *0.1 V) *0V
CMAX_WAKE +244 mF
(11)
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Figure 12. Battery Detect Timing Diagram
In order to detect a no battery condition during the discharge and wake tests, the maximum output capacitanceshould not exceed the following:a. Discharge (I
DISCHRG1
= 400 µA, t
DISCHRG1
= 1s, V
SHORT
= 2V)
b. Wake (I
WAKE
= 2 mA, t
WAKE
= 0.5 s, V
OREG
– V
RCH
= 4.1V)
Based on these calculations the recommended maximum output capacitance to ensure proper operation of thebattery detection scheme is 100 µF which will allow for process and temperature variations.
Figure 13 shows the battery detection scheme when a battery is inserted. Channel 3 is the output signal andChannel 4 is the output current. The output signal switches between V
OREG
and GND until a battery is inserted.Once the battery is detected, the output current increases from 0A to 1.3A, which is the programmed chargecurrent for this application.
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
Figure 13. Battery Detection Waveform When a Battery is Inserted
Figure 14 shows the battery detection scheme when a battery is removed. Channel 3 is the output signal andChannel 4 is the output current. When the battery is removed, the output signal goes up due to the stored energyin the inductor and it crosses the V
OREG
– V
RCH
threshold. At this point the output current goes to 0A and the ICterminates the charge process and turns on the I
DISCHG2
for t
DISCHG2
. This causes the output voltage to fall downbelow the V
OREG
– V
RCHG
threshold triggering a Battery Absent condition and starting the battery detectionscheme.
Figure 14. Battery Detection Waveform When a Battery is Removed
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
Current Sense Amplifier
+
-
FASTCHG
Disable
BAT
-
KISET2
+
+
ISET2
RISET2
RSNS
OUT
-
ICHARGE
SNS
ICHARGE +VISET2 K(ISET2)
RSNS RISET2
(12)
CH3=InductorCurrent
CH2
10V/div
CH2
16V
CH1
200mV/div
CH3
500mA/div
CH3
0 A
CH1
0V
CH1=ISET2
CH2=OUT
t=Time=200 s/divm
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BQ241xx family offers a current sense amplifier feature that translates the charge current into a DC voltage.Figure 15 is a block diagram of this feature.
Figure 15. Current Sense Amplifier
The voltage on the ISET2 pin can be used to calculate the charge current. Equation 12 shows the relationshipbetween the ISET2 voltage and the charge current:
This feature can be used to monitor the charge current (Figure 16 ) during the current regulation phase(Fastcharge only) and the voltage regulation phase. The schematic for the application circuit for this waveform isshown in Figure 18
Figure 16. Current Sense Amplifier Charge Current Waveform
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bqSWITCHER SYSTEM DESIGN EXAMPLE
System Design Specifications:
DIL+ICHARGE ICHARGERipple
LOUT +VBAT ǒVINMAX *VBATǓ
VINMAX ƒ DIL
LOUT +4.2 (16 *4.2)
16 (1.1 106) (1.33 0.3)
LOUT +7.06 mH
(13)
DIL+VBAT ǒVINMAX *VBATǓ
VINMAX ƒ LOUT
DIL+4.2 (16 *4.2)
16 (1.1 106) (10 10*6)
DIL+0.282 A
(14)
ILPK +IOUT )
DIL
2
ILPK +1.33 )0.282
2
ILPK +1.471 A
(15)
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The following section provides a detailed system design example for the bq24100.
•V
IN
= 16V•V
BAT
= 4.2V (1-Cell)•I
CHARGE
= 1.33 A•I
PRECHARGE
= I
TERM
= 133 mA•Safety Timer = 5 hours•Inductor Ripple Current = 30% of Fast Charge Current•Initiate Charge Temperature = 0 ° C to 45 ° C1. Determine the inductor value (L
OUT
) for the specified charge current ripple:
Set the output inductor to standard 10 µH. Calculate the total ripple current with using the 10 µH inductor:
Calculate the maximum output current (peak current):
Use standard 10 µH inductor with a saturation current higher than 1.471A. (i.e., Sumida CDRH74-100)
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ƒo+1
2pLOUT COUT
Ǹ
COUT +1
4p2 ƒo2 LOUT
COUT +1
4p2 (16 103)2 (10 10*6)
COUT +9.89 mF
(16)
RSNS +VRSNS
ICHARGE
(17)
RSNS +100 mV
1.33 A
RSNS +0.075 W
(18)
PRSNS +ICHARGE2 RSNS
PRSNS +1.332 0.1
PRSNS +176.9 mW
(19)
RISET1 +KISET1 VISET1
RSNS ICHARGE
RISET1 +1000 1.0
0.1 1.33
RISET1 +7.5 kW
(20)
RISET2 +KISET2 VISET2
RSNS IPRECHARGE
RISET2 +1000 0.1
0.1 0.133
RISET2 +7.5 kW
(21)
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2. Determine the output capacitor value (
OUT
) using 16 kHz as the resonant frequency:
Use standard value 10 µF, 25V, X5R, ± 20% ceramic capacitor (i.e., Panasonic 1206 ECJ-3YB1E106M3. Determine the sense resistor using the following equation:
In order to get better current regulation accuracy ( ± 10%), let V
RSNS
be between 100 mV and 200 mV. UseV
RSNS
= 100 mV and calculate the value for the sense resistor.
This value is not standard in resistors. If this happens, then choose the next larger value which in this case is0.1 Ω. Using the same equation (15) the actual V
RSNS
will be 133mV. Calculate the power dissipation on thesense resistor:
Select standard value 100 m Ω, 0.25W 0805, 1206 or 2010 size, high precision sensing resistor. (i.e., VishayCRCW1210-0R10F)
4. Determine ISET 1 resistor using the following equation:
Select standard value 7.5 k Ω, 1/16W ± 1% resistor (i.e., Vishay CRCWD0603-7501-F)5. Determine ISET 2 resistor using the following equation:
Select standard value 7.5 k Ω, 1/16W ± 1% resistor (i.e., Vishay CRCWD0603-7501-F)
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
CTTC +tCHARGE
KTTC
CTTC +300 m
2.6 mńnF
CTTC +115.4 nF
(22)
103AT
RT1
RT2
VTSB
TS
RTH
RT2=
V RTH RTH
O(VTSB) COLD HOT
´ ´ ´ 1
VLTF
1
VHTF
-
RTHHOT ´ - ´RTHCOLD
VO(VTSB)
HTF
V-1
( )
VO(VTSB)
LTF
V-1
( )
1
RT2
1
RTHCOLD
+
VO(VTSB)
LTF
V-1
RT1=
Where:
V =V % /100
LTF O(VTSB) LTF 100¸
V =V % /100
HTF O(VTSB) HTF 100¸
´
´
(23)
RTHCOLD +27.28 kW
RT1 +9.31 kW
RTHHOT +4.912 kW
RT2 +442 kW
(24)
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
6. Determine TTC capacitor (
TTC
) for the 5.0 hours safety timer using the following equation:
Select standard value 100 nF, 16V, X7R, ± 10% ceramic capacitor (i.e., Panasonic ECJ-1VB1C104K). Usingthis capacitor the actual safety timer will be 4.3 hours.7. Determine TS resistor network for an operating temperature range from 0 ° C to 45 ° C.
Figure 17. TS Resistor Network
Assuming a 103AT NTC Thermistor on the battery pack, determine the values for RT1 and RT2 using thefollowing equations:
Copyright © 2004 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 25
Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
APPLICATION INFORMATION
Charging Battery and Powering System Without Affecting Battery Charge and Termination
3IN
4IN
6VCC
2STAT1
19STAT2
5 PG
7 TTC
16 CE
10VSS
13NC
OUT 1
OUT 20
PGND17
PGND18
SNS15
BAT 14
ISET18
ISET29
TS12
VTSB11
VIN
CIN COUT
RSNS
0.1W
1.5KW1.5KW1.5KW
Charge
DoneAdapter
Present
7.5KW
7.5KW
9.31KW
442KW
VTSB
103AT
Battery
Pack
Pack-
Pack+
0.1 Fm
0.1 Fm
0.1 Fm
0.1 Fm
10 Fm
10 Hm
10 Fm
BQ24100
D1
RSYS
CTTC
LOUT
MMBZ18VALT1
bq24100 , , bq24103 , , bq24103Abq24104 , bq24105 , bq24108 , bq24109bq24113 , bq24113A , bq24115
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Figure 18. Application Circuit for Charging a Battery and Powering a SystemWithout Affecting Termination
The bqSWITCHER was designed as a stand-alone battery charger but can be easily adapted to power a systemload, while considering a few minor issues.
Advantages:
1. The charger controller is based only on what current goes through the current-sense resistor (so precharge,constant current, and termination all work well), and is not affected by the system load.2. The input voltage has been converted to a usable system voltage with good efficiency from the input.3. Extra external FETs are not needed to switch power source to the battery.4. The TTC pin can be grounded to disable termination and keep the converter running and the battery fullycharged, or let the switcher terminate when the battery is full and then run off of the battery via the senseresistor.
Other Issues:
1. If the system load current is large ( ≥1 A), the IR drop across the battery impedance causes the batteryvoltage to drop below the refresh threshold and start a new charge. The charger would then terminate due tolow charge current. Therefore, the charger would cycle between charging and termination. If the load issmaller, the battery would have to discharge down to the refresh threshold resulting in a much slowercycling. Note that grounding the TTC pin keeps the converter on continuously.2. If TTC is grounded, the battery is kept at 4.2 V (not much different than leaving a fully charged battery setunloaded).
3. Efficiency declines 2-3% hit when discharging through the sense resistor to the system.
26 Submit Documentation Feedback Copyright © 2004 – 2008, Texas Instruments Incorporated
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Using bq24105 to Charge the LiFePO
4
Battery
3IN
4IN
6VCC
2STAT1
19STAT2
5PG
7 TTC
16CE
10VSS
13FB
OUT 1
OUT 20
PGND17
PGND18
SNS15
BAT 14
ISET18
ISET29
TS12
VTSB11
VIN
L
CTTC
CIN COUT
RSNS
0.1W
1.5KW1.5KW1.5KW
Charge
DoneAdapter
Present
7.5KW
20KW
9.31KW
442KW
RT1
103AT
Battery
Pack
Pack-
Pack+
0.1 Fm
0.1 Fm
0.1 Fm
0.1 Fm
10 Fm
10 Hm
10 Fm
BQ24105
RISET2
RISET1
200KW
143KW
RT2
VTSB
OUT
MMBZ18VALT1
D1
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
The LiFePO
4
battery has many unique features such as a high thermal runaway temperature, discharge currentcapability, and charge current. These special features make it attractive in many applications such as powertools. The recommended charge voltage is 3.6 V and termination current is 50 mA. Figure 19 shows anapplication circuit for charging one cell LiFePO4 using bq24105. The charge voltage is 3.6 V and rechargevoltage is 3.516 V. The fast charging current is set to 1.33 A while the termination current is 50 mA. This circuitcan be easily changed to support two or three cell applications. However, only 84 mV difference betweenregulation set point and rechargeable threshold makes it frequently enter into recharge mode when small loadcurrent is applied. This can be solved by lower down the recharge voltage threshold to 200 mV to dischargemore energy from the battery before it enters recharge mode again. See the application report, Using thebq24105/25 to Charge LiFePO
4
Battery (SLUA443 ), for additional details. The recharge threshold should beselected according to real application conditions.
Figure 19. 1-Cell LiFePO4 Application
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THERMAL CONSIDERATIONS
q(JA) +TJ*TA
P
(25)
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The SWITCHER is packaged in a thermally enhanced MLP package. The package includes a thermal pad toprovide an effective thermal contact between the IC and the printed circuit board (PCB). Full PCB designguidelines for this package are provided in the application report entitled: QFN/SON PCB Attachment(SLUA271 ).
The most common measure of package thermal performance is thermal impedance ( θ
JA
) measured (or modeled)from the chip junction to the air surrounding the package surface (ambient). The mathematical expression for θ
JAis:
Where:
T
J
= chip junction temperatureT
A
= ambient temperatureP = device power dissipation
Factors that can greatly influence the measurement and calculation of θ
JA
include:•Whether or not the device is board mounted•Trace size, composition, thickness, and geometry•Orientation of the device (horizontal or vertical)•Volume of the ambient air surrounding the device under test and airflow•Whether other surfaces are in close proximity to the device being tested
The device power dissipation, P, is a function of the charge rate and the voltage drop across the internal powerFET. It can be calculated from the following equation:P = [Vin × lin - Vbat × Ibat]
Due to the charge profile of Li-xx batteries, the maximum power dissipation is typically seen at the beginning ofthe charge cycle when the battery voltage is at its lowest. (See Figure 9 .)
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PCB LAYOUT CONSIDERATION
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.................................................................................................................................................. SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008
It is important to pay special attention to the PCB layout. The following provides some guidelines:•To obtain optimal performance, the power input capacitors, connected from input to PGND, should be placedas close as possible to the bqSWITCHER. The output inductor should be placed directly above the IC and theoutput capacitor connected between the inductor and PGND of the IC. The intent is to minimize the currentpath loop area from the OUT pin through the LC filter and back to the GND pin. The sense resistor should beadjacent to the junction of the inductor and output capacitor. Route the sense leads connected across theR
(SNS)
back to the IC, close to each other (minimize loop area) or on top of each other on adjacent layers (donot route the sense leads through a high-current path). Use an optional capacitor downstream from the senseresistor if long (inductive) battery leads are used.•Place all small-signal components (C
TTC
, RSET1/2 and TS) close to their respective IC pin (do not placecomponents such that routing interrupts power stage currents). All small control signals should be routedaway from the high current paths.•The PCB should have a ground plane (return) connected directly to the return of all components through vias(3 vias per capacitor for power-stage capacitors, 3 vias for the IC PGND, 1 via per capacitor for small-signalcomponents). A star ground design approach is typically used to keep circuit block currents isolated(high-power/low-power small-signal) which reduces noise-coupling and ground-bounce issues. A singleground plane for this design gives good results. With this small layout and a single ground plane, there is nota ground-bounce issue, and having the components segregated minimizes coupling between signals.•The high-current charge paths into IN and from the OUT pins must be sized appropriately for the maximumcharge current in order to avoid voltage drops in these traces. The PGND pins should be connected to theground plane to return current through the internal low-side FET. The thermal vias in the IC PowerPAD™provide the return-path connection.•The bqSWITCHER is packaged in a thermally enhanced MLP package. The package includes a thermal padto provide an effective thermal contact between the IC and the PCB. Full PCB design guidelines for thispackage are provided in the application report entitled: QFN/SON PCB Attachment (SLUA271 ). Six 10-13 milvias are a minimum number of recommended vias, placed in the IC's power pad, connecting it to a groundthermal plane on the opposite side of the PWB. This plane must be at the same potential as V
SS
and PGNDof this IC.•See user guide SLUU200 for an example of good layout.
WAVEFORMS: All waveforms are taken at Lout (IC Out pin). V
IN
= 7.6 V and the battery was set to 2.6 V, 3.5 V,and 4.2 V for the three waveforms. When the top switch of the converter is on, the waveform is at ~7.5 V, andwhen off, the waveform is near ground. Note that the ringing on the switching edges is small. This is due to atight layout (minimized loop areas), a shielded inductor (closed core), and using a low-inductive scope groundlead (i.e., short with minimum loop) .
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Precharge: The current is low in precharge; so, the bottom synchronous FET turns off after its minimum on-timewhich explains the step between ≈0 V and -0.5 V. When the bottom FET and top FET are off, the currentconducts through the body diode of the bottom FET which results in a diode drop below the ground potential.The initial negative spike is the delay turning on the bottom FET, which is to prevent shoot-through current as thetop FET is turning off.
Fast Charge: This is captured during the constant-current phase. The two negative spikes are the result of theshort delay when switching between the top and bottom FETs. The break-before-make action prevents currentshoot-through and results in a body diode drop below ground potential during the break time.
Charge during Voltage Regulation and Approaching Termination: Note that this waveform is similar to theprecharge waveform. The difference is that the battery voltage is higher so the duty cycle is slightly higher. Thebottom FET stays on longer because there is more of a current load than during precharge; it takes longer for theinductor current to ramp down to the current threshold where the synchronous FET is disabled.
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113Abq24115
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
BQ24100RHL PREVIEW QFN RHL 20 50 TBD Call TI Call TI
BQ24100RHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24103ARHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24103ARHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24103ARHLT ACTIVE QFN RHL 20 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24103ARHLTG4 ACTIVE QFN RHL 20 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24103RHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24104RHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24104RHLT ACTIVE QFN RHL 20 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24105RHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24105RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24108RHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24108RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24109RHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24109RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24109RHLT ACTIVE QFN RHL 20 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24109RHLTG4 ACTIVE QFN RHL 20 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24113ARHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24113ARHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24113ARHLT ACTIVE QFN RHL 20 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24113ARHLTG4 ACTIVE QFN RHL 20 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24113RHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24113RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24115RHLR ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
BQ24115RHLRG4 ACTIVE QFN RHL 20 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
PACKAGE OPTION ADDENDUM
www.ti.com 16-Apr-2009
Addendum-Page 1
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 16-Apr-2009
Addendum-Page 2
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
BQ24100RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24100RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1
BQ24103ARHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1
BQ24103ARHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24103ARHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1
BQ24103ARHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24103RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1
BQ24103RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24104RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24104RHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24105RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1
BQ24105RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24108RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24109RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24109RHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24113ARHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24113ARHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1
BQ24113ARHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Aug-2009
Pack Materials-Page 1
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
BQ24113ARHLT QFN RHL 20 250 180.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1
BQ24113RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1
BQ24113RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
BQ24115RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.3 8.0 12.0 Q1
BQ24115RHLR QFN RHL 20 3000 330.0 12.4 3.8 4.8 1.6 8.0 12.0 Q1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
BQ24100RHLR QFN RHL 20 3000 346.0 346.0 29.0
BQ24100RHLR QFN RHL 20 3000 370.0 355.0 55.0
BQ24103ARHLR QFN RHL 20 3000 370.0 355.0 55.0
BQ24103ARHLR QFN RHL 20 3000 346.0 346.0 29.0
BQ24103ARHLT QFN RHL 20 250 195.0 200.0 45.0
BQ24103ARHLT QFN RHL 20 250 190.5 212.7 31.8
BQ24103RHLR QFN RHL 20 3000 370.0 355.0 55.0
BQ24103RHLR QFN RHL 20 3000 346.0 346.0 29.0
BQ24104RHLR QFN RHL 20 3000 346.0 346.0 29.0
BQ24104RHLT QFN RHL 20 250 190.5 212.7 31.8
BQ24105RHLR QFN RHL 20 3000 370.0 355.0 55.0
BQ24105RHLR QFN RHL 20 3000 346.0 346.0 29.0
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Aug-2009
Pack Materials-Page 2
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
BQ24108RHLR QFN RHL 20 3000 346.0 346.0 29.0
BQ24109RHLR QFN RHL 20 3000 346.0 346.0 29.0
BQ24109RHLT QFN RHL 20 250 190.5 212.7 31.8
BQ24113ARHLR QFN RHL 20 3000 346.0 346.0 29.0
BQ24113ARHLR QFN RHL 20 3000 370.0 355.0 55.0
BQ24113ARHLT QFN RHL 20 250 190.5 212.7 31.8
BQ24113ARHLT QFN RHL 20 250 195.0 200.0 45.0
BQ24113RHLR QFN RHL 20 3000 370.0 355.0 55.0
BQ24113RHLR QFN RHL 20 3000 346.0 346.0 29.0
BQ24115RHLR QFN RHL 20 3000 370.0 355.0 55.0
BQ24115RHLR QFN RHL 20 3000 346.0 346.0 29.0
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Aug-2009
Pack Materials-Page 3
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