tm
April 2009
FDMA520PZ Single P-Channel PowerTrench®MOSFET
©2009 Fairchild Semiconductor Corporation
FDMA520PZ Rev.B2
www.fairchildsemi.com
1
FDMA520PZ
Single P-Channel PowerTrench® MOSFET
–20V, –7.3A, 30m:
Features
Max rDS(on) = 30m: at VGS = –4.5V, ID = –7.3A
Max rDS(on) = 53m: at VGS = –2.5V, ID = –5.5A
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
Free from halogenated compounds and antimony oxides
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage –20 V
VGS Gate to Source Voltage ±12 V
ID
Drain Current -Continuous (Note 1a) –7.3 A
-Pulsed –24
PD
Power Dissipation (Note 1a) 2.4 W
Power Dissipation (Note 1b) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 52 °C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1b) 145
Device Marking Device Package Reel Size Tape Width Quantity
520 FDMA520PZ MicroFET 2X2 7’’ 8mm 3000 units
5
16
2
34
D
D
S
D
D
G
Bottom Drain Contact
D
DS
G
D
D
Pin 1
Drain Source
MicroFET 2X2 (Bottom View)
HBM ESD protection level > 3k V typical (Note 3)
RoHS Compliant
FDMA520PZ Single P-Channel PowerTrench®MOSFET
FDMA520PZ Rev.B2 www.fairchildsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = –250PA, referenced to 25°C –8.4 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 PA
IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±10 PA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250PA –0.6 –1.1 –1.5 V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = –250PA, referenced to 25°C 3.5 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = –4.5V, ID = –7.3A 26 30
m:VGS = –2.5V, ID = –5.5A 42 53
VGS = –4.5V, ID = –7.3A ,TJ = 125°C 36 55
gFS Forward Transconductance VDS = –5V, ID = –7.3A 22 S
Dynamic Characteristics
Ciss Input Capacitance VDS = –10V, VGS = 0V,
f = 1MHz
1235 1645 pF
Coss Output Capacitance 255 340 pF
Crss Reverse Transfer Capacitance 225 340 pF
Switching Characteristics
td(on) Turn-On Delay Time
VDD = –10V, ID = –7.3A
VGS = –4.5V, RGEN = 6:
10 20 ns
trRise Time 29 47 ns
td(off) Turn-Off Delay Time 83 133 ns
tfFall Time 74 119 ns
QgTotal Gate Charge VDD = –5V, ID = –7.3A
VGS = –4.5V
14 20 nC
Qgs Gate to Source Gate Charge 2.9 nC
Qgd Gate to Drain “Miller” Charge 4.4 nC
Drain-Source Diode Characteristics
ISMaximum Continuous Drain-Source Diode Forward Current –2 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS= –2A –0.8 –1.2 V
trr Reverse Recovery Time IF =–7.3A, di/dt = 100A/Ps30 45 ns
Qrr Reverse Recovery Charge 22 33 nC
Notes:
1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
a. 52°C/W when mounted on
a 1 in2pad of 2 oz copper
b.145°C/W when mounted on a
minimum pad of 2 oz copper
FDMA520PZ Single P-Channel PowerTrench®MOSFET
FDMA520PZ Rev.B2 www.fairchildsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
01234
0
6
12
18
24
VGS = -2.5V
VGS = -3V
VGS = -4.5V
VGS = -3.5V
VGS = -4V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 6 12 18 24
0.5
1.0
1.5
2.0
2.5
3.0
VGS = -2.5V
VGS = -4.5V
VGS = -4V
VGS = -3.5V
VGS = -3V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -7.3A
VGS = -4.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
2345678
10
20
30
40
50
60
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 125oC
TJ= 25oC
ID= -3.6A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m:)
-VGS, GATE TO SOURCE VOLTAGE (V)
O n -R es is ta nc e v s G a te to
Source Voltage
Figure 5. Transfer Characteristics
01234
0
6
12
18
24
VDD = -5V
TJ =-55oC
TJ= 25oC
TJ= 125oC
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.0001
0.001
0.01
0.1
1
10
30
TJ = -55oC
TJ = 25oC
TJ= 125oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou rc e t o Dr ai n D i od e
Forward Voltage vs Source Current
FDMA520PZ Single P-Channel PowerTrench®MOSFET
FDMA520PZ Rev.B2 www.fairchildsemi.com
4
Figure 7.
0 7 14 21 28 35
0
2
4
6
8
10
ID = -7.3A
VDD = -15V
VDD = -5V
-VGS, GATE TO SOURCE VOLTAGE(V)
-Qg, GATE CHARGE(nC)
VDD = -10V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
30 20
f = 1MHz
VGS = 0V
Crss
Coss
Ciss
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
3000
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
03691215
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
TJ = 25oC
TJ= 125oC
VGS = 0V
-Ig, GATE LEAKAGE CURRENT(A)
-VGS, GATE TO SOURCE VOLTAGE(V)
Gate Leakage Current vs Gate to
Source Voltage
F i g u re 10 . F orwa r d B ia s S af e
0.1 1 10
0.01
0.1
1
10
60
60
100us
10s
rDS(on) LIMIT
1ms
10ms
100ms
1s
DC
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
VGS=4.5V
SINGLE PULSE
RTJA=145oC/W
TA = 25oC
Operating Area
Figure 11.
10-4 10-3 10-2 10-1 100101102103
0
30
60
90
120
150
SINGLE PULSE
RTJA = 145oC/W
TA=25oC
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
S i n g l e P u l s e M a x i m u m
Power Dissipation
Figure 12. Transient Thermal Response Curve
10-4 10-3 10-2 10-1 100101102103
0.01
0.1
1DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZTJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
0.005
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
FDMA520PZ Single P-Channel PowerTrench®MOSFET
FDMA520PZ Rev.B2 www.fairchildsemi.com
5
Dimensional Outline and Pad Layout
FDMA520PZ Rev. B2 www.fairchildsemi.com
6
FDMA520PZ Single P-Channel PowerTrench®MOSFET
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™*
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Fairchild Semiconductor®
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MicroFET™
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OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
PSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
t
m
®
tm
t
m
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Rev. I40
