FDMA520PZ tm Single P-Channel PowerTrench(R) MOSFET -20V, -7.3A, 30m: Features General Description Max rDS(on) = 30m: at VGS = -4.5V, ID = -7.3A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. Max rDS(on) = 53m: at VGS = -2.5V, ID = -5.5A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection level > 3k V typical (Note 3) The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1 D D G Bottom Drain Contact Drain Source D D 1 6 D D 2 5 D G 3 4 S S D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V 12 V -7.3 -24 Power Dissipation (Note 1a) 2.4 Power Dissipation (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W C Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) 52 RTJA Thermal Resistance, Junction to Ambient (Note 1b) 145 C/W Package Marking and Ordering Information Device Marking 520 Device FDMA520PZ (c)2009 Fairchild Semiconductor Corporation FDMA520PZ Rev.B2 Package MicroFET 2X2 1 Reel Size 7'' Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMA520PZ Single P-Channel PowerTrench(R) MOSFET April 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient -20 V ID = -250PA, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V -1 PA IGSS Gate to Source Leakage Current VGS = 12V, VDS = 0V 10 PA -1.5 V mV/C -8.4 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250PA, referenced to 25C 3.5 VGS = -4.5V, ID = -7.3A 26 rDS(on) Static Drain to Source On Resistance VGS = -2.5V, ID = -5.5A 42 53 VGS = -4.5V, ID = -7.3A ,TJ = 125C 36 55 VDS = -5V, ID = -7.3A 22 gFS Forward Transconductance -0.6 -1.1 mV/C 30 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHz 1235 1645 pF 255 340 pF 225 340 pF 10 20 ns 29 47 ns 83 133 ns 74 119 ns 14 20 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = -10V, ID = -7.3A VGS = -4.5V, RGEN = 6: VDD = -5V, ID = -7.3A VGS = -4.5V 2.9 nC 4.4 nC FDMA520PZ Single P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge -2 VGS = 0V, IS = -2A IF =-7.3A, di/dt = 100A/Ps A -0.8 -1.2 V 30 45 ns 22 33 nC Notes: 1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. b.145C/W when mounted on a minimum pad of 2 oz copper a. 52C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied. FDMA520PZ Rev.B2 2 www.fairchildsemi.com VGS = -4.5V PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VGS = -4V 18 VGS = -3.5V VGS = -2.5V VGS = -3V 12 6 0 0 1 2 3 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 24 4 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 2.5 VGS = -2.5V 2.0 VGS = -3V VGS = -3.5V 1.5 1.0 VGS = -4V 0.5 0 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 24 60 ID = -7.3A VGS = -4.5V 1.4 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 18 -ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 50 40 TJ = 125oC 30 20 ID = -3.6A 2 Figure 3. Normalized On- Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 18 VDD = -5V 12 TJ = 125oC TJ = 25oC TJ =-55oC 0 0 1 2 3 8 30 10 1 0.1 Figure 5. Transfer Characteristics VGS = 0V TJ = 125oC TJ = 25oC 0.01 0.001 0.0001 0.0 4 -VGS, GATE TO SOURCE VOLTAGE (V) FDMA520PZ Rev.B2 3 4 5 6 7 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 24 6 TJ = 25oC 10 150 TJ, JUNCTION TEMPERATURE (oC) -ID, DRAIN CURRENT (A) VGS = -4.5V TJ = -55oC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMA520PZ Single P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted FDMA520PZ Single P-Channel PowerTrench(R) MOSFET 10 3000 ID = -7.3A Ciss VDD = -5V 8 VDD = -10V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) Typical Characteristics TJ = 25C unless otherwise noted 6 VDD = -15V 4 2 1000 Coss f = 1MHz VGS = 0V 30 0.1 0 0 7 14 21 -Qg, GATE CHARGE(nC) 28 35 Figure 7. Gate Charge Characteristics 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 60 VGS = 0V ID, DRAIN CURRENT (A) rDS(on) LIMIT 1E-5 TJ = 125oC 1E-6 1E-7 TJ = 25oC 1E-8 10 100us 1ms 1 10ms VGS=4.5V 0.1 100ms 1s 10s DC SINGLE PULSE R o =145 TJA C/W TA = 25oC 0.01 0.1 1E-9 0 3 6 9 12 -VGS, GATE TO SOURCE VOLTAGE(V) 15 1 2 SINGLE PULSE o RTJA = 145 C/W NORMALIZED THERMAL IMPEDANCE, ZTJA 1 o TA=25 C 90 60 30 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE -3 10 -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 0.005 -4 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Single Pulse Maximum Power Dissipation FDMA520PZ Rev.B2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA 0.01 0 -4 10 60 Figure 10. Forward Bias Safe Operating Area 150 120 10 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 20 Figure 8. Capacitance vs Drain to Source Voltage 1E-4 -Ig, GATE LEAKAGE CURRENT(A) Crss 100 Figure 12. Transient Thermal Response Curve 4 www.fairchildsemi.com FDMA520PZ Single P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout FDMA520PZ Rev.B2 5 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDMA520PZ Rev. B2 6 www.fairchildsemi.com FDMA520PZ Single P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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