053-7040 Rev - 9-2002
MS1003
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor
designed primarily for VHF, FM communications. Diffused
emitter resistors provide high VSWR capability under rated
operating conditions. Internal impedance matching ensures
optimum power gain and efficiency over the 136-175 MHz band.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
y
mbol Paramete
r
V
alue Unit
V
CBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 18 V
VCES Collector-Emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 20 A
PDISS Power Dissipation 270 W
TJ Junction Temperature +200 °
°°
°C
TSTG Storage Temperature -65 to +150 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 0.65 °
°°
°C/W
Features
175 MHz
12.5 VOLTS
POUT = 100 WATTS
GP = 6.0 dB MINIMUM
COMMON EMITTER CONFIGURATION
053-7040 Rev - 9-2002
MS1003
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°
°°
°C)
C)C)
C)
STATIC
STATICSTATIC
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVCBO IC = 50mA IE = 0mA 36 --- --- V
BVCES IC = 100mA VBE = 0V 36 --- --- V
BVCEO IC = 100mA IB = 0mA 18 --- --- V
BVEBO IE = 10mA IC = 0mA 4.0 --- --- V
ICES VCE = 15V IE = 0mA --- --- 15 mA
hFE VCE = 5V IC = 5A 10 --- 100 ---
DYNAMIC
DYNAMIC DYNAMIC
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
POUT f =175 MHz PIN = 25 W VCC=12.5V 100 --- --- W
GP f =175 MHz PIN = 25 W VCC=12.5V 6.0 --- --- dB
COB f = 1 MHz VCB = 12.5 V --- --- 390 pF
I
II
IMPEDANCE DATA
MPEDANCE DATAMPEDANCE DATA
MPEDANCE DATA
FREQ ZIN(Ω)
Ω)Ω)
Ω) ZCL(Ω)
Ω)Ω)
Ω)
175 MHz 1.5 - j0.9 0.5 - j1.0
053-7040 Rev - 9-2002
MS1003
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA