053-7040 Rev - 9-2002
MS1003
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor
designed primarily for VHF, FM communications. Diffused
emitter resistors provide high VSWR capability under rated
operating conditions. Internal impedance matching ensures
optimum power gain and efficiency over the 136-175 MHz band.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
mbol Paramete
alue Unit
CBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 18 V
VCES Collector-Emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 20 A
PDISS Power Dissipation 270 W
TJ Junction Temperature +200 °
°°
°C
TSTG Storage Temperature -65 to +150 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 0.65 °
°°
°C/W
Features
• 175 MHz
• 12.5 VOLTS
• POUT = 100 WATTS
• GP = 6.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION