MS1003 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features * * * * * 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and efficiency over the 136-175 MHz band. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 36 18 36 4.0 20 270 +200 -65 to +150 V V V V A W C C 0.65 C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7040 Rev - 9-2002 MS1003 ELECTRICAL SPECIFICATIONS (Tcase = 25 25C) STATIC Symbol BVCBO BVCES BVCEO BVEBO ICES hFE Test Conditions IC = 50mA IC = 100mA IC = 100mA IE = 10mA VCE = 15V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 5A Min. Value Typ. Max. Unit 36 36 18 4.0 --10 ------------- --------15 100 V V V V mA --- DYNAMIC Symbol POUT GP COB Test Conditions Min. Value Typ. Max. Unit f =175 MHz PIN = 25 W VCC=12.5V 100 --- --- W f =175 MHz PIN = 25 W VCC=12.5V 6.0 --- --- dB f = 1 MHz VCB = 12.5 V --- --- 390 pF IMPEDANCE DATA FREQ 175 MHz 053-7040 Rev - 9-2002 ZIN() ZCL() 1.5 - j0.9 0.5 - j1.0 MS1003 PACKAGE MECHANICAL DATA 053-7040 Rev - 9-2002