2007-08-30Rev. 2.6 Page 1
SPP02N60S5
Cool MOS™ Power Transistor VDS 600 V
RDS(on) 3Ω
ID1.8 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• Ultra low effective capacitances
• Improved transconductance
PG-TO220
2
P
-
TO220
-
3
-
1
23
1
Type Package Ordering Code
SPP02N60S5 PG-TO220 Q67040-S4181
Marking
02N60S5
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
1.8
1.1
A
Pulsed drain current, t
p
limited by T
j
max ID
p
uls 3.2
Avalanche energy, single pulse
ID = 1.35 A, VDD = 50 V
EAS 50 mJ
Avalanche energy, repetitive tAR limited by Tjmax1
)
ID = 1.8 A, VDD = 50 V
EAR 0.07
Avalanche current, repetitive t
AR
limited by T
j
max I
AR
1.8 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 25 W
Operating and storage temperature T
j
,Tst
g
-55... +150 °C
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2007-08-30Rev. 2.6 Page 2
SPP02N60S5
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C
dv/dt20 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 5 K/W
Thermal resistance, junction - ambient, leaded RthJA --62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
35
62
-
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s3)
Tsold - - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=1.8A - 700 -
Gate threshold voltage VGS(th) ID=80µΑ,VGS=VDS 3.5 4.5 5.5
Zero gate voltage drain current IDSS VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
0.5
-
1
50
µA
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=1.1A,
Tj=25°C
Tj=150°C
-
-
2.7
7.3
3
-
Ω
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2007-08-30Rev. 2.6 Page 3
SPP02N60S5
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=1.1A
- 1.4 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 240 - pF
Output capacitance Coss - 77 -
Reverse transfer capacitance Crss - 4.4 -
Turn-on delay time td(on) VDD=350V, VGS=0/10V,
ID=1.8A, RG=50Ω
- 35 - ns
Rise time tr- 35 -
Turn-off delay time td(off) - 35 42
Fall time tf- 20 30
Gate Charge Characteristics
Gate to source charge Qgs VDD=350V, ID=1.8A - 2.3 - nC
Gate to drain charge Qgd - 4.5 -
Gate charge total QgVDD=350V, ID=1.8A,
VGS=0 to 10V
- 7.3 9.5
Gate plateau voltage V(plateau) VDD=350V, ID=1.8A - 8 - V
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220°C, reflow
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2007-08-30Rev. 2.6 Page 4
SPP02N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 1.8 A
Inverse diode direct current,
pulsed
ISM - - 3.2
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=350V, IF=IS ,
diF/dt=100A/µs
- 860 1460 ns
Reverse recovery charge Qrr - 1.6 - µC
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1 0.1 K/W
Rth2 0.184
Rth3 0.306
Rth4 1.207
Rth5 0.974
Rth6 0.251
Thermal capacitance
Cth1 0.00002806 Ws/K
Cth2 0.0001113
Cth3 0.0001679
Cth4 0.000547
Cth5 0.001388
Cth6 0.019
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
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2007-08-30Rev. 2.6 Page 5
SPP02N60S5
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
2
4
6
8
10
12
14
16
18
20
22
24
W
28
SPP02N60S5
Ptot
2 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 5 10 15 V 25
VDS
0
1
2
3
4
A
6
ID
6V
7V
7.5V
8V
8.5V
9V
10V
12V
20V
4 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 1.1 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
2
4
6
8
10
12
14
Ω
17 SPP02N60S5
RDS(on)
typ
98%
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2007-08-30Rev. 2.6 Page 6
SPP02N60S5
5 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 4 8 12 VGS 20
V
0
1
2
3
4
A
6
ID
6 Typ. gate charge
VGS =f (QGate)
parameter: ID = 1.8 A pulsed
0 1 2 3 4 5 6 7 8 nC 10
QGate
0
2
4
6
8
10
12
V
16 SPP02N60S5
VGS
0.2 VDS max
0.8 VDS max
7 Forward characteristics of body diode
IF = f (VSD)
parameter: T
j
, tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-2
10
-1
10
0
10
1
10
A
SPP02N60S5
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
8 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
A
2
IAR
Tj(START)=25°C
Tj(START)=125°C
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2007-08-30Rev. 2.6 Page 7
SPP02N60S5
9 Avalanche energy
EAS = f(Tj)
par.: ID = 1.35 A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
10
20
30
mJ
50
EAS
10 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720
SPP02N60S5
V(BR)DSS
11 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 10 20 30 40 50 60 70 80 V 100
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
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2007-08-30Rev. 2.6 Page 8
SPP02N60S5
Definition of diodes switching characteristics
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2007-08-30Rev. 2.6 Page 9
SPP02N60S5
PG-TO220-3-1, PG-TO220-3-21
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2007-08-30Rev. 2.6 Page 10
SPP02N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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regarding circuits, descriptions and charts stated herein.
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