FEATURES
● High reliability
● High forward current capability
APPLICATIONS
computer and industrial applications
CONSTRUCTION
● Silicon epitaxial planar
ABSOLUTE MAXIMUM RATINGS (TJ=25℃)
Parameter
Repetitive peak reverse voltage
Reverse Vltage
Peak forward surge current
Forward current
Average forward current
Power dissipation
Junction temperature
Storge temperature range
MAXIMUM THERMAL RESISTANCE (TJ=25℃)
Parameter
Junction ambient
ELECTRICAL CHARACTERISTICS
TJ=25℃
Parameter Symbol Min Typ Max Unit
VF0.54 0.62 V
VF0.66 0.74 V
VF0.76 0.86 V
VF0.82 0.92 V
VF0.87 1.0 V
IR100 nA
IR100 uA
Diode capacitance CD2.5 pF
Reverse recovery time trr 4 ns
~ 425 ~
HIGH-SPEED SWITCHING DIODE
Dimensions in inches and (millimeters)
LL4150
VRRM 100 V
Type Symbol ValueTest Conditions
53
V
IFSM 75 A
VR75
IF
PVmW
75
℃
mA
℃
mA
300
IFAV
500 K/WOn PC board 50mm*50mm*1.6mm
Test Conditions
RthJA
Symbol Value Unit
● High speed switch and general purpose use in
tp=1uS
VR=0
Reverse current
TJ
Unit
Forward voltage
IF=10mA
IF=50mA
IF=100mA
IF=200mA
TsTg-65 ~ +175
VR=0, f=1MHZ, VHF=50mA
IF= IR=10…100mA,RL=100Ω
Test Conditions
IF=1mA
VR=50V
VR=50V, Tj=150℃
DL - 35
.055(1.4)
.063(1.6)
.020(0.5)
.012(0.3).012(0.3)
.020(0.5)
.146(3.7)
.130(3.3)
RATING AND CHARACTERISTIC CURVES
~ 426 ~
LL4150
FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE
IR (uA)
TJ((°C)
0.1
1
0.01
10
0 100 200
100
1000
VR=75V
TYPICAL VALUES
VR=20V
TYPICAL VALUES
VR(V)
FIG. 4 -DIODE CAPACITANCE VS. REVERSE
VOLTAGE (TYPICAL VALUES)
Cd
(pF)
0.8
0.6
0.4 010 20
1.0
1.2
f=1MHZ,TJ=25°C
Tamb(°C)
FIG. 1 - MAXIMUM PERMISSIBLE CONTINUOUS
FORWARD CURRENT VS. AMBIENT TEMPERATURE
IF
(m A)
0100 200
400
100
0
200
300
VF (V)
FIG. 2 -FORWARD CURRENT VS.FORWARD
VOLTAGE
IF
(m A)
400
200
0
012
600
TJ=175°C
TYPICAL VALUES
TJ=25°C
TYPICAL VALUES
