PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET(R) Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* D G S V(BR)DSS 75V RDS(on) typ. max ID (Silicon Limited) 3.6m 4.5m 209A ID (Package Limited) 90A h D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-247AC AUIRFP2907 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter Units h 148h ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 209 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) A 90 c 840 PD @TC = 25C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage 470 3.1 20 W W/C V 1970 mJ See Fig. 12a, 12b, 15, 16 A IDM Pulsed Drain Current d EAS Single Pulse Avalanche Energy (Thermally Limited) IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and dv/dt TJ TSTG c c e Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw C 300 10 lbf in (1.1N m) y Thermal Resistance y Typ. Max. --- 0.32 Case-to-Sink, Flat, Greased Surface 0.24 --- Junction-to-Ambient --- 40 RJC Junction-to-Case RCS RJA j Parameter mJ V/ns 5.0 -55 to + 175 Units C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 08/11/11 AUIRFP2907 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 75 --- --- 2.0 130 --- --- --- --- --- 0.085 3.6 --- --- --- --- --- --- --- --- 4.5 4.0 --- 20 250 200 -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 125A V VDS = VGS, ID = 250A S VDS = 25V, ID = 125A A VDS = 75V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 150C nA VGS = 20V VGS = -20V f f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Min. Typ. Max. Units Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- --- --- --- --- --- --- --- 410 92 140 23 190 130 130 5.0 620 140 210 --- --- --- --- --- nC ns nH Conditions ID = 125A VDS = 60V VGS = 10V VDD = 38V ID = 125A RG = 1.2 VGS = 10V Between lead, f f D LS Internal Source Inductance --- 13 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 13000 2100 500 9780 1360 2320 --- --- --- --- --- --- S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 60V, = 1.0MHz VGS = 0V, VDS = 0V to 60V g pF G Diode Characteristics Parameter Min. Typ. Max. Units h IS Continuous Source Current --- --- ISM (Body Diode) Pulsed Source Current --- --- 840 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 140 880 1.3 210 1320 c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.25mH RG = 25, IAS = 125A. (See Figure 12). ISD 125A, di/dt 260A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. 2 Conditions MOSFET symbol 209 A V ns nC D showing the integral reverse G S p-n junction diode. TJ = 25C, IS = 125A, VGS = 0V TJ = 25C, IF = 125A di/dt = 100A/s f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. R is measured at TJ of approximately 90C. www.irf.com AUIRFP2907 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-247 MSL1 Class M4 (+/- 425V) AEC-Q101-002 Class H3A (+/- 8000V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 AUIRFP2907 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 4.5V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 4.5V 10 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 175 C 100 TJ = 25 C 10 V DS = 25V 20s PULSE WIDTH 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 1000 5.0 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 1 4.0 20s PULSE WIDTH TJ = 175 C 10.0 ID = 209A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRFP2907 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 16000 Coss = Cds + Cgd Ciss 12000 8000 4000 Coss Crss 0 1 10 20 VGS , Gate-to-Source Voltage (V) 20000 100 12 8 4 0 0 100 200 300 400 500 600 700 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10000 ID, Drain-to-Source Current (A) 1000 ISD , Reverse Drain Current (A) FOR TEST CIRCUIT SEE FIGURE 13 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 175 C 10 TJ = 25 C 1 0.1 0.0 VDS = 60V VDS = 37V 16 VDS, Drain-to-Source Voltage (V) 100 ID = 125A V GS = 0 V 0.5 1.0 1.5 2.0 2.5 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.0 OPERATION IN THIS AREA LIMITED BY R (on) DS 1000 100 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 10msec DC 0.1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFP2907 240 LIMITED BY PACKAGE VGS 200 ID , Drain Current (A) RD VDS D.U.T. RG + -VDD 160 10V 120 Pulse Width 1 s Duty Factor 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 0 VDS 25 50 75 100 125 150 TC , Case Temperature ( C) 175 90% 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFP2907 15V DRIVER L VDS ID 51A 88A BOTTOM 125A TOP 4000 D.U.T RG + V - DD IAS 20V EAS , Single Pulse Avalanche Energy (mJ) 5000 0.01 tp A 3000 2000 Fig 12a. Unclamped Inductive Test Circuit 1000 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG 4.0 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS VGS(th) , Variace ( V ) 3.5 3.0 ID = 250A 2.5 2.0 1.5 1.0 3mA -75 -50 -25 IG ID Current Sampling Resistors 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRFP2907 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 2000 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 125A 1600 1200 800 400 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature 8 www.irf.com AUIRFP2907 Peak Diode Recovery dv/dt Test Circuit + D.U.T* - Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG + - * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS * VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [ VGS=10V] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ Re-Applied Voltage Body Diode VDD ] Forward Drop Inductor Curent Ripple 5% [ ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET(R) power MOSFETs www.irf.com 9 AUIRFP2907 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number AUFP2907 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFP2907 Ordering Information Base part number Package Type Standard Pack AUIRFP2907 TO-247 Form Tube www.irf.com Complete Part Number Quantity 25 AUIRFP2907 11 AUIRFP2907 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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