BCP69 — PNP General-Purpose Amplifier
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP69 Rev. 1.1.0
November 2014
BCP69
PNP General-Purpose Amplifier
Ordering Information
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Marking Package Packing Method
BCP69 BCP69 SOT-223 4L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -20 V
VCBO Collector-Base Voltage -30 V
VEBO Emitter-Base Voltage -5.0 V
ICCollector Current - Continuous -1.5 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 to +150 °C
Description
This device is designed for general-purpose medium-
power amplifiers and switches requiring collector cur-
rents to 1.0 A. Sourced from process 77.
SOT-223
1
2
4
3
1. Base 2,4. Collector 3. Emitter
BCP69 — PNP General-Purpose Amplifier
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP69 Rev. 1.1.0 2
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
Symbol Parameter Max. Unit
PD
Total Device Dissipation 1.0 W
Derate Above 25°C 8.0 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -20 V
BVCBO Collector-Base Breakdown Voltage IC = -1.0 mA, IE = 0 -30 V
BVEBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -5.0 V
ICBO Collector-Base Cut-Off Current
VCB = -25 V, IE = 0 -100 nA
VCB = -25 V, IE = 0,
TJ = 150°C -10 μA
IEBO Emitter-Base Cut-Off Current VEB = -5.0 V, IC = 0 -100 nA
hFE DC Current Gain
IC = -5 mA, VCE = -1.0 V 50
IC = -500 mA, VCE = -1.0 V 85 375
IC = -1.0 A, VCE = -1.0 V 60
VCE(sat) Collector-Emitter Saturation Voltage IC = -1.0 A, IB = -100 mA -0.5 V
VBE(on) Base-Emitter On Voltage IC = -1.0 A, VCE = -1.0 V -1.0 V
Ccb Collector-Base Capacitance VCB = -10 V, IE = 0,
f = 1.0 MHz 30 pF
hfe Small-Signal Current Gain IC = -50 mA, VCE = -10 V,
f = 20 MHz 2.5
BCP69 — PNP General-Purpose Amplifier
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP69 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current Figure 4. Base Emitter On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature Figure 6. Collector-Base Capacitance vs.
Collector-Base Voltage
0.01 0.1 1 2
0
50
100
150
200
250
300
I - CO L L EC TOR CU RR ENT (A)
h - TYPICAL PULSED CURRENT GAIN
FE
- 40 °C
25 °C
C
V = 5 .0V
CE
125 °C
0.01 0.1 1 3
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (A)
V - COLLE CTOR-EMITTER VOLTA GE (V)
CESAT
- 40 °C
25 °C
C
β= 1 0
125 °C
1 10 100 1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAG E (V)
BESAT
C
β= 10
- 40 °C
25 °C
125 °C
1101001000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(O N)
C
V = 5.0 V
CE
- 40 °C
25 °C
125 °C
25 50 75 100 125 150
0.1
1
10
10 0
T - AM BI EN T TE MPE RAT U R E ( C )
I - COLLECTOR CURRENT (nA)
A
V = 20V
CB
°
CBO
0102030
0
10
20
30
40
V - COLLECTOR-BASE VOLTAGE (V)
C - COLLECTOR-BASE CAPACITANCE (pF)
OBO
CB
f = 1.0 MHz
BCP69 — PNP General-Purpose Amplifier
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP69 Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Gain Bandwidth Product vs.
Collector Current Figure 8. Power Dissipation vs. Ambient T emperature
1 10 100 1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
T
C
V = 10V
CE
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
PC[W], POWER DISSIPATION
Ta[oC], AM BIENT TEMPERATURE
APPROVED
July-14-2008
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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