VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
®
June 1998
B LOCK DI AG RAM ()
TYPE Vclamp RDS(on) Ilim
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
70 V
70 V
70 V
70 V
0.1
0.1
0.1
0.1
10 A
10 A
10 A
10 A
LINEA R CURRENT LIMIT A TION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INT EGRA T ED CLAM P
LOW CURRE NT DRA WN FROM INPUT PIN
DIAG NO S T IC FEE DBA CK THRO UG H INP UT
PIN
ESD PROT ECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPA TIBLE WITH STANDAR D P OWER
MOSFET
DESCRIPTION
The VNB10N07, VNK10N07FM, VNP10N07FI
and VNV10N07 are monolithic devices made
using STMicroelectronics VIPower M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedback can be detected by monitoring th e
voltage at the input pin.
1
10
PowerSO-10
13
123
ISOWATT220
D2PAK
TO-263 SOT82-FM
() P owerSO-10 Pin Configuration : INPUT = 6,7, 8,9, 10; SOURCE = 1,2, 4,5; DRAIN = TAB
1/14
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
PowerSO-10
D2PAK SOT-82FM ISOWATT220
VDS Drain-source Voltage (Vin = 0) Internally Clamped V
Vin Input Voltage 18 V
IDDrain Current Internally Limited A
IRReverse DC Output Current -14 A
Vesd Electrostatic Discharge (C= 100 pF,
R=1.5 K)2000 V
Ptot Total Dissipation at Tc = 25 oC 50 9.5 31 W
TjOperating Junction Temperature Internally Limited oC
TcCase Operating Temperature Internally Limited oC
Tstg Storage Tem perature -55 to 150 oC
THERMAL DATA
ISOWATT220 PowerSO-10 SOT82-FM D2PAK
Rthj-case Thermal Resistance
Junction-case Max 4 2.5 13 2.5 oC/W
Rthj-amb Thermal Resistance
Junction-ambient Max 62.5 50 100 62.5 oC/W
ELE CT RICAL CHAR ACT ERIST I CS (Tcase = 25 oC unless otherwise specif ied)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCLAMP Drain-source Clamp
Voltage ID = 200 mA Vin = 0 607080 V
V
CLTH Drain-source Clamp
Threshold Voltage ID = 2 mA Vin = 0 55 V
VINCL Input-Source Reverse
Clamp Voltage Iin = -1 mA -1 -0.3 V
IDSS Zero Input Voltage
Drain Current (Vin = 0) VDS = 13 V Vin = 0
VDS = 25 V Vin = 0 50
200 µA
µA
IISS Supply Current from
Input Pin VDS = 0 V Vin = 10 V 250 500 µA
ON ()
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VIN(th) Input Threshold
Voltage VDS = Vin ID + Iin = 1 mA 0.8 3 V
RDS(on) Static Drain-source On
Resistance Vin = 10 V ID = 5 A
Vin = 5 V ID = 5 A 0.1
0.14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
2/14
ELE CT RICAL CHAR ACT ERIST I CS (continued)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs () Forward
Transconductance VDS = 13 V ID = 5 A 6 8 S
Coss Output Capacitance VDS = 13 V f = 1 MHz Vin = 0 350 500 pF
SWIT CHING (**)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 15 V Id = 5 A
Vgen = 10 V Rgen = 10
(see figure 3)
50
80
230
100
100
160
400
180
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 15 V Id = 5 A
Vgen = 10 V Rgen = 1000
(see figure 3)
600
0.9
3.8
1.7
900
2
6
2.5
ns
µs
µs
µs
(di/dt)on Turn-on Current Slope VDD = 15 V ID = 5 A
Vin = 10 V Rgen = 10 60 A/µs
QiTotal Input Charge VDD = 12 V ID = 5 A Vin = 10 V 30 nC
SOUR CE DRAI N DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSD () Forward On Voltage ISD = 5 A Vin = 0 1.6 V
trr (∗∗)
Qrr (∗∗)
IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 5 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
125
0.3
4.8
ns
µC
A
PROTECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ilim Drain Current Limit Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V 7
710
10 14
14 A
A
tdlim (∗∗) Step Response
Current Limit Vin = 10 V
Vin = 5 V 20
50 30
80 µs
µs
Tjsh (∗∗) Overtemperature
Shutdown 150 oC
Tjrs (∗∗) Overtemperature Reset 135 oC
Igf (∗∗) Fault Sink Current Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V 50
20 mA
mA
Eas (∗∗) Single Pulse
Avalanche Energy starting Tj = 25 oC VDD = 20 V
Vin = 10 V Rgen = 1 K L = 10 mH 0.4 J
() P ulsed: P ulse duration = 300 µs, duty cy cle 1.5 %
(∗∗) Parameters guarant eed by des ign/c haracterizat i on
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
3/14
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (Iiss) flows into the Input pin in order to
supply the i nternal circuitry .
The device integrat es:
-OVERVOLTAGE CLAMP PROTECTION:
internally set at 70V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
-LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperat ure thres hold Tjsh.
-OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast , accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150oC. The device is automatically
restarted when the chip temperature falls
below 135oC.
-STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 .
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increas e in RDS(on)).
PROTECTION FEATURES
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
4/14
Thermal Impedance For ISOWATT220
D erating Curve
Transconductance
Therm al Impedance For D2PAK / P owerS O-10
Output Characteristics
Stat ic Drain-S ource On Resist ance vs Input
Voltage
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
5/14
St atic Drain-Sourc e On Resistance
Input Charge vs Input Voltage
Normalized Input Threshold Voltage vs
Temperatur e
Static Drain-Sourc e On Resistance
Capacitance V ariations
Normalized O n Resist ance vs Temperature
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
6/14
N ormalized On Resist ance vs Temperat ure
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn- on Current Slope
Turn- off Drain-Source Voltage Slope
Switching Time Resistive Load
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
7/14
Switching Time Resis tive Load
Current Limit vs Junction Temperature
Source Drain Diode Forward Characteristics
Switching Time Resistive Load
Step Respons e Current Lim it
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
8/14
Fig. 2: Unclamped Inductiv e Wav eform s
Fig. 3: Switching Times Test Circuit s Fo r
R esistive Load Fig. 4: Input Charge T est Cir cuit
Fig. 1: Unclamped Induct ive Load Test Circ uits
Fig. 5: Test Circuit For Inductive Load Switching
And Di ode Recovery Times Fig. 6: Waveforms
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
9/14
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
L2
L3
L
B2
B
G
EA
C2
D
C
A1
P011P6/C
TO-263 (D2PAK) MECHANICAL DATA
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
10/14
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.85 3.05 1.122 1.200
A1 1.47 1.67 0.578 0.657
b 0.40 0.60 0.157 0.236
b1 1.4 1.6 0.551 0.630
b2 1.3 1.5 0.511 0.590
c 0.45 0.6 0.177 0.236
D 10.5 10.9 4.133 4.291
e 2.2 2.8 0.866 1.102
E 7.45 7.75 2.933 3.051
L 15.5 15.9 6.102 6.260
L1 1.95 2.35 0.767 0.925
P032R
SOT82-FM MECHANICAL DATA
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
11/14
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
ISOWATT220 MEC HANICAL DATA
P011G
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
12/14
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h0.50 0.002
L 1.20 1.80 0.047 0.071
q1.70 0.067
α0
o
8
o
DETAIL "A"
PLANE
SEATING
α
L
A1
F
A1
h
A
D
D1
= =
= =
= =
E4
0.10 A
E1E3
C
Q
A
= =
B
B
DETAIL "A"
SEATING
PLANE
= =
= =
E2
610
51
eB
HE
M
0.25
= =
= =
0068039-C
PowerSO-10 MECHANICAL DATA
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
13/14
DocID1642 Rev 6 14/14
VNB10N07/K10N07FM/VNP10N07FI/VNV10N07
14
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