VNB10N07/K10N07FM VNP10N07FI/VNV10N07 (R) "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 Vclamp 70 70 70 70 V V V V R DS(on) 0.1 0.1 0.1 0.1 I lim 10 10 10 10 A A A A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect BLOCK DIAGRAM () 3 1 SOT82-FM D2PAK TO-263 3 1 ISOWATT220 2 10 1 PowerSO-10 the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. () PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB June 1998 1/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 ABSOLUTE MAXIMUM RATING Symbol Parameter Value PowerSO-10 D2PAK V DS Drain-source Voltage (V in = 0) V in Unit SOT-82FM ISOWATT220 Internally Clamped V Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC Output Current -14 A 2000 V V esd Electrostatic Discharge (C= 100 pF, R=1.5 K) P tot Total Dissipation at T c = 25 o C Tj Tc T stg 50 9.5 Operating Junction Temperature Case Operating Temperature 31 W Internally Limited o C Internally Limited o C -55 to 150 o C Storage Temperature THERMAL DATA R thj-case Thermal Resistance Junction-case R thj-amb Thermal Resistance Junction-ambient ISOWATT220 PowerSO-10 SOT82-FM D2PAK Max 4 2.5 13 2.5 o C/W Max 62.5 50 100 62.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions V CLAMP Drain-source Clamp Voltage I D = 200 mA V CLTH Drain-source Clamp Threshold Voltage I D = 2 mA V INCL Input-Source Reverse Clamp Voltage I in = -1 mA I DSS Zero Input Voltage Drain Current (V in = 0) V DS = 13 V V DS = 25 V II SS Supply Current from Input Pin V DS = 0 V V in = 0 V in = 0 Min. Typ. Max. Unit 60 70 80 V 55 V -1 -0.3 V 50 200 A A 250 500 A Typ. Max. Unit 3 V 0.1 0.14 V in = 0 V in = 0 V in = 10 V ON () Symbol Parameter Test Conditions Min. I D + Ii n = 1 mA 0.8 V IN(th) Input Threshold Voltage V DS = Vin R DS(on) Static Drain-source On Resistance V in = 10 V I D = 5 A V in = 5 V ID = 5 A 2/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symbol g fs () C oss Parameter Test Conditions Forward Transconductance V DS = 13 V ID = 5 A Output Capacitance VDS = 13 V f = 1 MHz Min. Typ. 6 8 V in = 0 Max. Unit S 350 500 pF Typ. Max. Unit SWITCHING (**) Symbol Parameter Test Conditions Min. t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 15 V V gen = 10 V (see figure 3) Id = 5 A R gen = 10 50 80 230 100 100 160 400 180 ns ns ns ns t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 15 V V gen = 10 V (see figure 3) Id = 5 A R gen = 1000 600 0.9 3.8 1.7 900 2 6 2.5 ns s s s Turn-on Current Slope V DD = 15 V V in = 10 V Total Input Charge V DD = 12 V (di/dt) on Qi ID = 5 A R gen = 10 ID = 5 A Vin = 10 V 60 A/s 30 nC SOURCE DRAIN DIODE Symbol Parameter Test Conditions V SD () Forward On Voltage I SD = 5 A t rr () Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A di/dt = 100 A/s V DD = 30 V T j = 25 o C (see test circuit, figure 5) Q rr () I RRM () Min. Typ. V in = 0 Max. Unit 1.6 V 125 ns 0.3 C 4.8 A PROTECTION Symbol I lim Parameter Test Conditions Min. Typ. Max. Unit V DS = 13 V V DS = 13 V 7 7 10 10 14 14 A A 20 50 30 80 s s Drain Current Limit V in = 10 V V in = 5 V t dlim () Step Response Current Limit V in = 10 V V in = 5 V T jsh () Overtemperature Shutdown 150 o C T jrs () Overtemperature Reset 135 o C I gf () Fault Sink Current V in = 10 V V in = 5 V E as () Single Pulse Avalanche Energy starting T j = 25 o C V DD = 20 V V in = 10 V R gen = 1 K L = 10 mH V DS = 13 V V DS = 13 V 50 20 0.4 mA mA J () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Parameters guaranteed by design/characterization 3/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. 4/14 - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC. - STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 . The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)). VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Thermal Impedance For ISOWATT220 Thermal Impedance For D2PAK / PowerSO-10 Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage 5/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 6/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Normalized On Resistance vs Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 7/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Switching Time Resistive Load Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 8/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 9/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G P011P6/C 10/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 SOT82-FM MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.85 3.05 1.122 1.200 A1 1.47 1.67 0.578 0.657 b 0.40 0.60 0.157 0.236 b1 1.4 1.6 0.551 0.630 b2 1.3 1.5 0.511 0.590 c 0.45 0.6 0.177 0.236 D 10.5 10.9 4.133 4.291 e 2.2 2.8 0.866 1.102 E 7.45 7.75 2.933 3.051 L 15.5 15.9 6.102 6.260 L1 1.95 2.35 0.767 0.925 P032R 11/14 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 F F1 L7 1 2 3 L2 12/14 L4 P011G VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 PowerSO-10 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 e 1.27 0.240 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 1.80 0.047 h 0.50 L 0.002 1.20 q 1.70 0.071 0.067 0o 8o B 0.10 A B 10 = E4 = = = E1 = E3 = E2 = E = = = H 6 = = 1 5 B e 0.25 SEATING PLANE DETAIL "A" A C M Q D h = D1 = = = SEATING PLANE A F A1 A1 L DETAIL "A" 0068039-C 13/14 VNB10N07/K10N07FM/VNP10N07FI/VNV10N07 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER'S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR "AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL" INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID1642 Rev 6 14/14 14