SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet 3437, Rev. A
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR20200CT-G
MBRB20200CT-G
MBR20200CT-1-G
MBR20200CT-G/MBRB20200CT-G/MBR20200CT-1-G
SCHOTTKY RECTIFIER
Applications:
•
••
• Switching power supply •
••
• Converters •
••
• Free-Wheeling diodes •
••
• Reverse battery protection
Features:
• 150 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
Case styles
MBR20200CT-G
TO-220AB
MBRB20200CT-G
D2PAK
MBR20200CT-1-G
TO-262
Mechanical Dimensions: In Inches / mm
TO-220AB
SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet 3437, Rev. A
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR20200CT-G
MBRB20200CT-G
MBR20200CT-1-G
D2PAK
1.17(0.046)
1.37(0.054)
1.30(0.051)
1.70(0.067)
10.16(0.400)
REF.
15.49(0.610)
14.73(0.580)
1.40(0.055)
1.14(0.045)
3
×
8.90(0.350)
8.50(0.335)
2
×
0.93(0.037)
0.69(0.027)
4.69(0.185)
4.20(0.165)
1.32(0.052)
1.22(0.048)
5.28(0.208)
4.78(0.188)
5.08(0.200)REF.
0.55(0.022)
0.46(0.018)
BASE
COMMON
CATHODE
ANODE 1 ANODE 2
CATHODE
COMMON
TO-262
SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet 3437, Rev. A
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR20200CT-G
MBRB20200CT-G
MBR20200CT-1-G
Maximum Ratings:
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 200 V
10(Per leg) Max. Average Forward IF(AV) 50% duty cycle @TC =125°C,
rectangular wave form 20(Per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
180
A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop
(per leg)*
VF1 @ 10A, Pulse, TJ = 25 °C
@ 20 A, Pulse, TJ = 25 °C
0.90
1.00
V
V
F2 @ 10 A, Pulse, TJ = 125 °C
@ 20 A, Pulse, TJ = 125 °C
0.80
0.90
V
Max. Reverse Current (per
leg)*
IR1 @VR = rated VR
TJ = 25 °C
1.00 mA
I
R2 @VR = rated VR
TJ = 125 °C
50 mA
Max. Junction Capacitance
(per leg)
CT @VR = 5V, TC = 25 °C
fSIG = 1MHz
500 pF
Typical Series Inductance
(per leg)
LS Measured lead to lead 5 mm from
package body
8.0 nH
Max. Voltage Rate of Change dv/dt - 10,000 V/µs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150
°C
Max. Storage Temperature Tstg - -55 to +150
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC DC operation 2.0 °C/W
Maximum Thermal
Resistance Junction to Case
(per package)
RθJC DC operation - °C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθCS Mounting surface,
smooth and greased
(only for TO-220)
- °C/W
Approximate Weight wt - 2 g
Mounting Torque TM - 6(Min.)
12(Max.)
Kg-cm
Case Style TO-220AB D2PAK TO-262
SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet 3437, Rev. A
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR20200CT-G
MBRB20200CT-G
MBR20200CT-1-G
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting
from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
