Sto 8834750 TAG SEMICONDUCTORS LTD TAG SEMICONDUCTORS LTD . ba pe Bsaauzso OO00bbe O i 830 00662) OTL ASI] TAG SEMICONDUCTORS LTD . PO102AA P0102DA SCRS 0.8A 100-400V <200LA The P0102 series silicon controlled rectifiers are high performance planar diffused PNPN devices. These parts are intended for general purpose high volume applications. Absolute Maximum Ratings Ta=25C unless otherwise noted Parameter Part Ne. Symbo! Min. Max. Unit Test Conditions Repetitive Peak PO0102AA 100 Vv Off State Voltage = pg102BA [ Vprm 200 Vv Tij=40C to 125C P0102CA wre | 300 Vv [ Rex =1KQ | PO102DA 400 Vv On-State Current tt(RMS) 0.8 A All Conduction Angles Tc = 40C Average On-State Current lT(av) 0.5 A Half Cycle, O= 180 Tc= 40C Nonrept. On-State Current ltsm 8 A Half Cycle, 60 Hz Nonrept. On-State Current itsm 7 A Half Cycle, 50 Hz Fusing Current [2t 0.24 A2s = t==10 ms, Half Cycle Peak Reverse Gate Voltage VGRM 8 Vv Igpn=10 pA Peak Gate Current Iom 1 A Ops max. Peak Gate Dissipation Pem 2 WwW 10ps max. Gate Dissipation Pgiav) 0.1 WwW 20 ms max. Operating Temperature Tj 40 125 Storage Temperature Tstg 40 125 Soldering Temperature Tsid 250 C 1.6 mm from case, 10s max. Electrical Characteristics Ta= 25C unless otherwise noted Parameter Symbol Min. Max. Unit Test Conditions Off-State Leakage Current Iprw/IRRM 0.1 mA @Vpru + Vram. Rok = 1KQ, Tj= 125 C Off-State Leakage Current lprw/IRRM 1.0 pA @Vprm + Varo. Rex = 1KQ, Tj= 25 C On-State Voltage Vr 193 V at IT=1.6 A, Tj= 25C On-State Threshold Voltage Vt(To) 0.95 V Tj=125C On-State Slope Resistance IT 600 mQ- Tj=125C Gate Trigger Current ler 200 wA Vp=7V Gate Trigger Voltage Vet 0.8 Vv Vp=7V Holding Current lH - 5 mA Rex =1KQ Latching Current I 6 mA Rex=1KQ Critical Rate of Voltage Rise dv/dt 25 V/ps Vp=.67xVpram Rex = 1KQ Tj=125 C Critical Rate of Current Rise di/dt 30 A/us Ig=10mA dig/dt = 0.1A/ps Tj = 125 C Gate Controlled Delay Time tga 500 ns Ig =10 mA dig/dt = 0.1A/ps Commutated Turn-Off Time tg 200 sus Tco= 85C Vp =.67xVprmM Vra= 35 V Ir=IT(AV) Thermal Resistance junc. to case Rojc 100 K/W Thermal Resistance junc. to amb. Roja 200 K/W ee eee ee ene