© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 10
1Publication Order Number:
MMBT4401LT1/D
MMBT4401L, SMMBT4401L
Switching Transistor
NPN Silicon
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 60 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current Continuous IC600 mAdc
Collector Current Peak ICM 900 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT23 (TO236)
CASE 318
STYLE 6
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1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
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*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2X M G
G
2X = Specific Device Code
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MMBT4401LT3G SOT23
(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT4401LT1G
SMMBT4401LT1G
SOT23
(PbFree)
3000 / Tape &
Reel
10,000 / Tape &
Reel
MMBT4401L, SMMBT4401L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 Vdc
CollectorBase Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 Vdc
EmitterBase Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 Vdc
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV 0.1 mAdc
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX 0.1 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE 20
40
80
100
40
300
CollectorEmitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.4
0.75
Vdc
Base Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.75
0.95
1.2
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT250 MHz
CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb 6.5 pF
EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 30 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 104
SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td15
ns
Rise Time tr20
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts225
ns
Fall Time tf30
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Figure 1. TurnOn Time Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
-2.0 V < 2.0 ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1.0 kW
+30 V
200 W
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE 2.0%
1.0 kW
+30 V
200 W
CS* < 10 pF
-4.0 V
MMBT4401L, SMMBT4401L
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3
Figure 3. Charge Data
IC, COLLECTOR CURRENT (mA)
Q, CHARGE (nC)
2.0
3.0
5.0
7.0
10
1.0
10 20 50 70 100 200
0.1 300 500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 4. TurnOn Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 5. Rise and Fall Times
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
10
5.0
7.0
QT
QA
25°C 100°C
TRANSIENT CHARACTERISTICS
0.3
0.2
30
ts, STORAGE TIME (ns)
t, TIME (ns)
t, TIME (ns)tf, FALL TIME (ns)
70
100
10 20 50 70 100 200 300 500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0 20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 500
30
VCC = 30 V
IC/IB = 10
tr
tf
10 20 50 70 100 200 300 500
30
100
200
30
70
50
300
10 20 50 70 100 200 300 500
30
ts = ts - 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
MMBT4401L, SMMBT4401L
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4
6.0
8.0
10
0
4.0
2.0
0.1 2.0 5.0 10 20 50
1.00.50.20.01 0.02 0.05 100
Figure 8. Frequency Effects
f, FREQUENCY (kHz)
SMALLSIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 150 W
IC = 500 mA, RS = 200 W
IC = 100 mA, RS = 2.0 kW
IC = 50 mA, RS = 4.0 kW
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
100k50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k
6.0
8.0
10
0
4.0
2.0
NF, NOISE FIGURE (dB)
Figure 9. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1.0 kHz
IC = 50 mA
IC = 100 mA
IC = 500 mA
IC = 1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a highgain and a lowgain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
hie, INPUT IMPEDANCE (OHMS)
Figure 10. Input Impedance
IC, COLLECTOR CURRENT (mA)
50k
500
20k
10k
5.0k
2.0k
1.0k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
Figure 11. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
0.2
10
Figure 12. Output Admittance
IC, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h , OUTPUT ADMITTANCE ( mhos)
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
m
-4
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401L, SMMBT4401L
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5
STATIC CHARACTERISTICS
-55°C
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT (A)
Figure 14. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.2
0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
IC = 1.0 mA
0.001
10 mA 100 mA 500 mA
50
250
300
500
0.01
h , DC CURRENT GAIN
0.1
0
1
FE
TJ = 150°C
400
25°C
VCE = 5.0 V
VCE = 2.0 V
VCE = 1.0 V
Figure 15. CollectorEmitter Saturation
Voltage vs. Collector Current
IC, COLLECTOR CURRENT (A)
0.15
0.20
0.30
0.35
0.05
Figure 16. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.01 0.1
0
-0.5
0
+0.5
-1.0
-1.5
-2.0
1
150°C
qVC for VCE(sat)
qVB for VBE
0.0001
COEFFICIENT (mV/ C)°
-2.5 1.0 2.0 5.0 10 20 50 100 500
200
0.1 0.2 0.5
0.01 0.1
1.0
110
300 mA
100
150
200
350
450
-55°C
0.001
25°C
0.10
0.25
IC/IB = 10
100
MMBT4401L, SMMBT4401L
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6
STATIC CHARACTERISTICS
Figure 17. BaseEmitter Saturation Voltage vs.
Collector Current
Figure 18. BaseEmitter Turn On Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
1.1
10.10.010.0010.0001
0.3
0.4
0.5
0.6
0.7
0.9
1.0
VBE(sat), BASEEMITTER SATURA-
TION VOLTAGE (V)
VBE(on), BASEEMITTER TURN ON
VOLTAGE (V)
0.8
150°C
25°C
55°C
0.8
150°C
25°C
55°C
IC/IB = 10 VCE = 2.0 V
Figure 19. Input Capacitance vs. Emitter Base
Voltage
Figure 20. Output Capacitance vs. Collector
Base Voltage
Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)
63210
9
11
13
15
19
21
503025100
1.5
2.5
3.5
4.5
6.5
8.5
Cibo, INPUT CAPACITANCE (pF)
Cobo, OUTPUT CAPACITANCE (pF)
17
5.5
4 5 5 1520 354045
7.5
Figure 21. Safe Operating Area Figure 22. CurrentGainBandwidth Product
VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
100101
0.001
0.01
1
100.1
10
1000
IC, COLLECTOR CURRENT (A)
fT
, CURRENTGAINBANDWIDTH (MHz)
0.1
100
1 100 1000
10 msec
1 sec
VCE = 1.0 V
TA = 25°C
MMBT4401L, SMMBT4401L
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7
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
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MMBT4401LT1/D
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