2003-04-24
Page 1
SPD30N03S2L-10
OptiMOS Power-Transistor Product Summary
VDS 30 V
RDS(on) 10 mΩ
ID30 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Low On-Resistance RDS(on)
• Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO252 -3-11
Marking
2N03L10
Type Package Ordering Code
SPD30N03S2L-10 P- TO252 -3-11 Q67042-S4030
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current1)
TC=25°C
ID
30
30
A
Pulsed drain current
TC=25°C
ID puls 120
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
EAS 150 mJ
Repetitive avalanche energy, limited by Tjmax2) EAR 10
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
dv/dt6kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TC=25°C
Ptot 100 W
Operating and storage temperature T
j
, T
stg
-55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
2003-04-24
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SPD30N03S2L-10
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC -11.5 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 100
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
-
75
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS 30 - - V
Gate threshold voltage, VGS = VDS
ID=50µA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
IDSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS -1 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=30A
RDS(on) -11.2 14.6 Ω
Drain-source on-state resistance
VGS=10V, ID=30
RDS(on) -7.8 10 mΩ
1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 76A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2003-04-24
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SPD30N03S2L-10
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=30A
23.8 47.5 -S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
-1160 1550 pF
Output capacitance Coss -450 600
Reverse transfer capacitance Crss -120 175
Turn-on delay time td(on) VDD=15V, VGS=10V,
ID=30A,
RG=5.4Ω
-6.1 9.2 ns
Rise time tr-13 20
Turn-off delay time td(off) -27 41
Fall time tf-17 26
Gate Charge Characteristics
Gate to source charge Qgs VDD=24V, ID=30A -3.7 4.9 nC
Gate to drain charge Qgd -10.9 16.3
Gate charge total QgVDD=24V, ID=30A,
VGS=0 to 10V
-31.4 41.8
Gate plateau voltage V(plateau) VDD=24V, ID=30A -3.4 -V
Reverse Diode
Inverse diode continuous
forward current ISTC=25°C - - 30 A
Inv. diode direct current, pulsed ISM - - 120
Inverse diode forward voltage VSD VGS=0V, IF=30A -0.9 1.2 V
Reverse recovery time trr VR=-V, IF=lS,
diF/dt=100A/µs
-31 39 ns
Reverse recovery charge Qrr -29 37 nC
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SPD30N03S2L-10
1 Power dissipation
Ptot = f (TC)
parameter: VGS≥ 4 V
0 20 40 60 80 100 120 140 160°C 190
TC
0
10
20
30
40
50
60
70
80
90
W
110 SPD30N03S2L-10
Ptot
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 140 160°C 190
TC
0
4
8
12
16
20
24
A
32 SPD30N03S2L-10
ID
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD30N03S2L-10
ZthJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 -1 10 0 10 1 10 2
VVDS
0
10
1
10
2
10
3
10
A
SPD30N03S2L-10
ID
R DS(on) = V DS / I D
1 ms
100 µs
tp = 10.0µs
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SPD30N03S2L-10
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4V5
VDS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75 SPD30N03S2L-10
ID
VGS [V]
a
a3.0
b
b3.5
cc4.0
d
d4.5
e
e5.0
f
Ptot = 100W
f5.5
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 10 20 30 40 A60
ID
0
4
8
12
16
20
24
mΩ
32 SPD30N03S2L-10
RDS(on)
VGS [V] =
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
00.5 11.5 22.5 33.5 4 V 5
VGS
0
5
10
15
20
25
30
35
40
45
50
A
60
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
0 10 20 30 40 A 60
ID
0
5
10
15
20
25
30
35
40
45
50
S
60
gfs
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SPD30N03S2L-10
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 30 , VGS = 10 V
-60 -20 20 60 100 140 °C 200
Tj
0
2
4
6
8
10
12
14
16
18
20
mΩ
24 SPD30N03S2L-10
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 180
Tj
0
0.5
1
1.5
V
2.5
VGS(th)
0,4mA
50µA
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0 5 10 15 20 V 30
VDS
2
10
3
10
4
10
pF
C
Coss
Crss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
00.4 0.8 1.2 1.6 22.4 V3
VSD
0
10
1
10
2
10
3
10
A
SPD30N03S2L-10
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 175 °C typ
Tj = 175 °C (98%)
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SPD30N03S2L-10
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 30 A , VDD = 25 V, RGS = 25 Ω
25 45 65 85 105 125 145 °C 185
Tj
0
20
40
60
80
100
120
mJ
160
EAS
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 30 A pulsed
0 5 10 15 20 25 30 35 40 nC 50
QGate
0
2
4
6
8
10
12
V
16 SPD30N03S2L-10
VGS
0,8 VDS max
DS max
V0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60 -20 20 60 100 140 °C 200
Tj
27
28
29
30
31
32
33
34
V
36 SPD30N03S2L-10
V(BR)DSS
2003-04-24
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SPD30N03S2L-10
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St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
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and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPD30N03S2L-10, for simplicity the device is referred to by the term
SPD30N03S2L-10 throughout this documentation.
