QSB363 Subminiature Plastic Silicon Infrared Phototransistor
August 2011
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363 Rev. 1.0.5
QSB363
Subminiature Plastic Silicon Infrared Phototransistor
Features
■
NPN Silicon Phototransistor
■
T-3/4 (2mm) Surface Mount Package
■
Medium Wide Beam Angle, 24°
■
Black Plastic Package
■
Matched Emitters: QEB363 or QEB373
■
Daylight Filter
■
Tape & Reel Option (See Tape & Reel Specifications)
■
Lead Form Options: Gullwing, Yoke, Z-Bend
Description
The QSB363 is a silicon phototransistor encapsulated in
a black infrared transparent T-3/4 package.
Package Dimensions
SCHEMATIC
EMITTER
COLLECTOR
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
QSB363 Subminiature Plastic Silicon Infrared Phototransistor
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363 Rev. 1.0.5 2
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Notes:
1. Derate power dissipation linearly 1.08 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
Electrical/Optical Characteristics
(T
A
=25°C)
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +85 °C
Storage Temperature T
STG
-40 to +85 °C
Soldering Temperature (Iron)
(2, 3)
T
SOL
260 °C
Soldering Temperature (Flow)
(2,3)
T
SOL
260 °C
Collector Emitter Voltage V
CEO
30 V
Emitter Collector Voltage V
ECO
5V
Power Dissipation
(1)
P
C
75 mW
Parameters Test Conditions Symbol Min. Typ. Max Units
Peak Sensitivity Wavelength
λ
P
– 940 – nm
Reception Angle
Θ
– ±12 –
Collector Dark Current V
CE
= 20V, Ee = 0mW/cm
2
I
CEO
––100 nA
Collector-Emitter Breakdown
Voltage
I
C
= 100 µA, Ee = 0mW/cm
2
BV
CEO
30 – – V
Emitter-Collector Breakdown
Voltage
I
E
= 100 µA, Ee = 0mW/cm
2
BV
ECO
5––V
On-State Collector Current V
CE
= 5V
Ee = 1 mW/cm
2
λ
= 940nm GaAs
I
C(on)
1.0 1.5 – mA
Collector-Emitter Saturation
Voltage
I
C
= 2 mA
Ee = 1 mW/cm
2
λ
= 940nm GaAs
V
CE (SAT)
––0.4 V
Rise Time
Fall Time
V
CE
= 5 V,
I
C
= 1 mA
R
L
= 1000
Ω
t
r
t
f
–
–
15
15
–
–
µs
µs
QSB363 Subminiature Plastic Silicon Infrared Phototransistor
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363 Rev. 1.0.5 3
Typical Performance Curves
Collector Dark Current ICEO (A)
Ambient Temperature (°C)
10-10
10-9
10-8
10-7
10-6
5
2
5
2
5
2
5
2
025 50 75 100
Fig. 5 Collector Dark Current vs.
Ambient Temperature
100
80
60
40
20
0
-25
025
50 75 85 100
Ambient Temperature TA (˚C) Wavelength λ (nm)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Collector Power
Dissipation Pd (mW)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
Relative Collector Current (%)
Ambient Temperature T
A
(˚C)
0
20
40
60
80
100
010 20 30 40 50 60 70
120
140
160
VCE = 5 V
Ee = 1 mW/cm
2
14
12
10
8
6
4
2
0
01234
Collector Current IC (mA)
Collector Emitter Voltage V
CE
(V)
Fig. 6 Collector Current vs.
Collector Emitter Voltage
Fig. 4 Collector Current vs.
Irradiance
Collector Current IC (mA)
Irradiance E
e
(mW/cm
2
)
0.01 0.1 110
0.001
0.01
0.1
1
10 V
CE
= 5 V
T
A
= 25˚C
Fig. 2 Spectral Sensitivity
0
0.2
0.4
0.6
0.8
1.0
Relative Spectral Sensitivity
700 800 900 1000 1100 1300
V
Ee=1.50mW/cm
2
Ee=1.25mW/cm
2
Ee=1.0mW/cm
2
Ee=0.75mW/cm
2
Ee=0.5mW/cm
2
CE = 20 V
T
A
= 25˚C
QSB363 Subminiature Plastic Silicon Infrared Phototransistor
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363 Rev. 1.0.5 4
Package Dimensions
Features
■
Three lead forming options: Gull Wing, Yoke and Z-Bend
■
Compatible with automatic placement equipment
■
Supplied on tape and reel or in bulk packaging
■
Compatible with vapor phase reflow solder processes
Gull Wing Lead Configuration Z-Bend Lead Configuration
0.098±0.004
(2.5±0.1)
0.157±0.008
(4.0±0.2)
0.043±0.008
(1.1±0.2)
0.055±0.008
(1.4±0.2)
0.012±0.004
(0.3±0.1)
0.029±0.004
(0.75±0.1)
R0.031±.004
(0.8±0.1)
(0.83 )
+0.13
–0
0.032 +0.005
–0
C
L
C
L
0.020±0.004
(0.5±0.1)
0.006±0.002
(0.15±0.05)
0.016±0.004
(0.4±0.1)
0.079±0.008
(2.0±0.2)
0.106±0.008
(2.7±0.2)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.025±0.004
(0.65±0.1)
ø0.075±0.008
(ø1.9±0.2)
Collector
(0.6 )
+0.13
–0
0.023 +0.005
–0
0.098±0.004
(2.5±0.1)
0.043±0.008
(1.1±0.2)
0.055±0.008
(1.4±0.2)
0.12±0.008
(3.05±0.2)
0.169±0.008 (4.3±0.2)
0.228±0.008 (5.8±0.2) 0.029±0.004
(0.75±0.1)
R0.031±.004
(0.8±0.1)
C
L
C
L
0.020±0.004
(0.5±0.1)
0.006±0.002
(0.15±0.05)
0.016±0.004
(0.4±0.1)
0.079±0.008
(2.0±0.2)
0.106±0.008
(2.7±0.2)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.025±0.004
(0.65±0.1)
ø0.075±0.008
(1.9±0.2)
Collector
Yoke Lead Configuration
0.098±0.004
(2.5±0.1)
0.043±0.008
(1.1±0.2)
0.055±0.008
(1.4±0.2)
0.185±0.008 (4.7±0.2)
0.291±0.008 (7.4±0.2)
0.029±0.004
(0.75±0.1)
R0.031±.004
(0.8±0.1)
R0.016±.004
(0.4±0.1)
C
L
C
L
0.020±0.004
(0.5±0.1)
0.006±0.002
(0.15±0.05)
0.016±0.004
(0.4±0.1)
0.079±0.008
(2.0±0.2)
0.106±0.008
(2.7±0.2)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.025±0.004
(0.65±0.1)
ø0.075±0.008
(1.9±0.2)
Collector
QSB363 Subminiature Plastic Silicon Infrared Phototransistor
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363 Rev. 1.0.5 5
