QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24 Black Plastic Package Matched Emitters: QEB363 or QEB373 Daylight Filter Tape & Reel Option (See Tape & Reel Specifications) Lead Form Options: Gullwing, Yoke, Z-Bend Package Dimensions EMITTER 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) SCHEMATIC .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3) COLLECTOR 0.055 (1.4) 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) 0.024 (0.6) EMITTER NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified. (c)2006 Fairchild Semiconductor Corporation QSB363 Rev. 1.0.5 www.fairchildsemi.com QSB363 Subminiature Plastic Silicon Infrared Phototransistor August 2011 Parameter Symbol Rating Unit TOPR -40 to +85 C TSTG -40 to +85 C TSOL 260 C Operating Temperature Storage Temperature Soldering Temperature (Iron)(2, 3) Soldering Temperature (Flow)(2,3) TSOL 260 C Collector Emitter Voltage VCEO 30 V Emitter Collector Voltage VECO 5 V PC 75 mW Power Dissipation(1) Notes: 1. Derate power dissipation linearly 1.08 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. Electrical/Optical Characteristics (TA =25C) Parameters Test Conditions Symbol Min. Typ. Max Units nm Peak Sensitivity Wavelength P - 940 - Reception Angle - 12 - Collector Dark Current VCE = 20V, Ee = 0mW/cm2 ICEO - - 100 nA Collector-Emitter Breakdown Voltage IC = 100 A, Ee = 0mW/cm2 BVCEO 30 - - V Emitter-Collector Breakdown Voltage IE = 100 A, Ee = 0mW/cm2 BVECO 5 - - V On-State Collector Current VCE = 5V Ee = 1 mW/cm2 = 940nm GaAs IC(on) 1.0 1.5 - mA Collector-Emitter Saturation Voltage IC = 2 mA Ee = 1 mW/cm2 = 940nm GaAs VCE (SAT) - - 0.4 V VCE = 5 V, IC = 1 mA RL = 1000 tr tf - - 15 15 - - s s Rise Time Fall Time (c)2006 Fairchild Semiconductor Corporation QSB363 Rev. 1.0.5 www.fairchildsemi.com 2 QSB363 Subminiature Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25C unless otherwise specified) Fig. 1 Collector Power Dissipation vs. Ambient Temperature Fig. 2 Spectral Sensitivity 1.0 100 Relative Spectral Sensitivity Collector Power Dissipation Pd (mW) TA = 25C 80 60 40 20 0.8 0.6 0.4 0.2 0 0 -25 0 25 50 700 75 85 100 800 10 VCE = 5 V Ee = 1 mW/cm2 Collector Current IC (mA) Relative Collector Current (%) 160 120 100 80 60 40 1100 1300 VCE = 5 V TA = 25C 1 0.1 0.01 20 0 0 20 10 40 30 50 60 0.001 0.01 70 1 0.1 10 Ambient Temperature TA (C) Irradiance Ee (mW/cm2) Fig. 5 Collector Dark Current vs. Ambient Temperature Fig. 6 Collector Current vs. Collector Emitter Voltage 10-6 5 14 VCE = 20 V 12 2 Collector Current IC (mA) Collector Dark Current ICEO (A) 1000 Fig. 4 Collector Current vs. Irradiance Fig. 3 Relative Collector Current vs. Ambient Temperature 140 900 Wavelength (nm) Ambient Temperature TA (C) -7 10 5 2 10-8 5 2 10-9 5 10 Ee=1.50mW/cm2 8 Ee=1.25mW/cm2 6 Ee=1.0mW/cm2 4 Ee=0.75mW/cm2 2 2 10-10 Ee=0.5mW/cm2 0 0 25 50 75 100 0 2 4 3 Collector Emitter Voltage VCE (V) Ambient Temperature (C) (c)2006 Fairchild Semiconductor Corporation QSB363 Rev. 1.0.5 1 www.fairchildsemi.com 3 QSB363 Subminiature Plastic Silicon Infrared Phototransistor Typical Performance Curves Features Three lead forming options: Gull Wing, Yoke and Z-Bend Compatible with automatic placement equipment Supplied on tape and reel or in bulk packaging Compatible with vapor phase reflow solder processes Z-Bend Lead Configuration o0.0750.008 (1.90.2) CL 0.0120.004 (0.30.1) 0.032 +0.005 -0 +0.13 (0.83 -0 0.0290.004 (0.750.1) 0.0510.004 (1.30.1) 0.0060.002 (0.150.05) 0.023 +0.005 -0 0.0550.004 (1.40.1) (0.6 +0.13 ) -0 0.120.008 (3.050.2) 0.1690.008 (4.30.2) 0.2280.008 (5.80.2) 0.0250.004 (0.650.1) 0.0160.004 (0.40.1) 0.0200.004 (0.50.1) 0.0430.008 0.0550.008 R0.031.004 (1.10.2) (1.40.2) (0.80.1) 0.1060.008 (2.70.2) 0.0060.002 (0.150.05) 0.0250.004 (0.650.1) 0.0430.008 0.0550.008 (1.10.2) (1.40.2) R0.031.004 (0.80.1) CL CL 0.0790.008 (2.00.2) 0.0160.004 (0.40.1) CL 0.0200.004 (0.50.1) 0.1570.008 (4.00.2) Collector 0.0980.004 (2.50.1) 0.0790.008 (2.00.2) 0.0980.004 (2.50.1) o0.0750.008 (o1.90.2) Collector 0.0510.004 (1.30.1) 0.1060.008 (2.70.2) Gull Wing Lead Configuration 0.0550.004 (1.40.1) 0.0290.004 (0.750.1) ) Yoke Lead Configuration o0.0750.008 (1.90.2) 0.0980.004 (2.50.1) 0.0060.002 (0.150.05) R0.016.004 (0.40.1) 0.1850.008 (4.70.2) 0.2910.008 (7.40.2) (c)2006 Fairchild Semiconductor Corporation QSB363 Rev. 1.0.5 0.0290.004 (0.750.1) 0.0510.004 (1.30.1) 0.1060.008 (2.70.2) 0.0430.008 0.0550.008 (1.10.2) (1.40.2) R0.031.004 (0.80.1) 0.0250.004 (0.650.1) 0.0160.004 (0.40.1) 0.0200.004 (0.50.1) CL 0.0790.008 (2.00.2) CL Collector 0.0550.004 (1.40.1) www.fairchildsemi.com 4 QSB363 Subminiature Plastic Silicon Infrared Phototransistor Package Dimensions QSB363 Subminiature Plastic Silicon Infrared Phototransistor (c)2006 Fairchild Semiconductor Corporation QSB363 Rev. 1.0.5 www.fairchildsemi.com 5