Voltage Regulators
1
Publication date: November 2001 SFF00011BEB
AN78xxNSP Series
3-pin positive output voltage regulator (1 A type)
■Overview
The AN78xxNSP series is a 3-pin fixed positive output
type monolithic voltage regulator housed in surface mount-
ing package. Stabilized fixed output voltage is obtained
from unstable DC input voltage with using minimum ex-
ternal components. 9 types of fixed output voltage are avail-
able; 5 V, 6 V, 7 V, 8 V, 9 V, 10 V, 12 V, 15 V and 18 V. They
can be used widely in power circuits with current capacity
up to 1 A.
■Features
•Output voltage: 5 V, 6 V, 7 V, 8 V, 9 V, 10 V, 12 V, 15 V, 18 V
•Built-in overcurrent limit circuit
•Built-in thermal overload protection circuit
•Built-in ASO (area of safe operation) protection circuit
■Block Diagram
SP-3SU
Unit: mm
2.30
(3.00)
(4.35)
5.30±0.10
6.50±0.20
(1.80)
(0.20)
(0.80)
(2.50)
2.30±0.10
(5.50)
9.80±0.20
5.50±0.202.50
4.60±0.10
0.75±0.10
0.10±0.10
1.00±0.30
1
2
3
1.00±0.20
0.55
+0.10
–0.05
Error amp.
Current
source
Voltage
reference
Starter
Pass Tr
Current
limitter
Thermal
protection
R2
R
SC
R1
1
Input
FIN
Output
C
O
C
I
C
I
≥ 0.33 µF, C
O
≥ 0.1 µF
23
■Pin Descriptions
Pin No. Description
1 Input Input voltage pin
2 GND Ground pin (FIN)
3 Output Output voltage pin
Note) The package of this product will be changed
to lead-free type (SP-3SUA). See the new pack-
age dimensions section later of this datasheet.
AN78xxNSP Series
2SFF00011BEB
Note) 1. *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
*2: The power dissipation shown is the value for the independent IC without a heat sink at Ta = 85°C.
When Tj exceeds 150°C (designed value), the internal circuit cuts off the output.
2. This IC is not suitable for car electronics equipment.
■Absolute Maximum Ratings
Parameter Symbol Range Unit
Supply voltage VCC 35 V
Supply current ICC mA
Power dissipation *2PD364 mW
Operating ambient temperature *1Topr −30 to +85 °C
Storage temperature *1Tstg −55 to +150 °C
■Electrical Characteristics at Ta = 25°C
•AN7805NSP (5 V type)
The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10 ms)
that the characteristic value drift due to the chip junction temperature rise can be ignored.
Unless otherwise specified, VI = 10 V, IO = 500 mA, CI = 0.33 µF and CO = 0.1 µF
Parameter Symbol Conditions Min Typ Max Unit
Output voltage VO1 Tj = 25°C 4.8 5 5.2 V
Output voltage tolerance VO2 VI = 8 V to 20 V, IO = 5 mA to 1 A 4.75 5.25 V
Tj = 25°C, PD < 5 W
Line regulation 1 REGIN1 VI = 7.5 V to 25 V, Tj = 25°C3 100 mV
Line regulation 2 REGIN2 VI = 8 V to 12 V, Tj = 25°C150mV
Load regulation 1 REGL1 IO = 5 mA to 1.5 A, Tj = 25°C15 100 mV
Load regulation 2 REGL2 IO = 250 mA to 750 mA, Tj = 25°C5.0 50 mV
Bias current IBias Tj = 25°C3.9 8 mA
Bias current fluctuation to input ∆IBias(IN) VI = 7.5 V to 25 V, Tj = 25°C1.3 mA
Bias current fluctuation to load ∆IBias(L) IO = 5 mA to 1 A, Tj = 25°C0.5 mA
Ripple rejection ratio RR VI = 8 V to 18 V, IO = 100 mA, f = 120 Hz 62 dB
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
Parameter Symbol Conditions Min Typ Max Unit
Output noise voltage VNO f = 10 Hz to 100 kHz 40 µV
Minimum input/output voltage VDIF(min) IO = 1 A, Tj = 25°C2V
difference
Output short-circuit current IO(Short) VI = 35 V, Tj = 25°C700 mA
Peak output current IO(Peak) Tj = 25°C2.0 A
Output voltage temperature ∆VO / TaIO = 5 mA, Tj = 0°C to 125°C− 0.3 mV/°C
coefficient
Thermal protection operating Tj(TH) IO = 5 mA 150 °C
temperature
AN78xxNSP Series
3
SFF00011BEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN7806NSP (6 V type)
The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10 ms)
that the characteristic value drift due to the chip junction temperature rise can be ignored.
Unless otherwise specified, VI = 11 V, IO = 500 mA, CI = 0.33 µF and CO = 0.1 µF
Parameter Symbol Conditions Min Typ Max Unit
Output noise voltage VNO f = 10 Hz to 100 kHz 40 µV
Minimum input/output voltage VDIF(min) IO = 1 A, Tj = 25°C2V
difference
Output short-circuit current IO(Short) VI = 35 V, Tj = 25°C700 mA
Peak output current IO(Peak) Tj = 25°C2.0 A
Output voltage temperature ∆VO / TaIO = 5 mA, Tj = 0°C to 125°C− 0.4 mV/°C
coefficient
Thermal protection operating Tj(TH) IO = 5 mA 150 °C
temperature
Parameter Symbol Conditions Min Typ Max Unit
Output voltage VO1 Tj = 25°C 5.75 6 6.25 V
Output voltage tolerance VO2 VI = 9 V to 21 V, IO = 5 mA to 1 A 5.7 6.3 V
Tj = 25°C, PD < 5 W
Line regulation 1 REGIN1 VI = 8.5 V to 25 V, Tj = 25°C5 120 mV
Line regulation 2 REGIN2 VI = 9 V to 13 V, Tj = 25°C1.5 60 mV
Load regulation 1 REGL1 IO = 5 mA to 1.5 A, Tj = 25°C14 120 mV
Load regulation 2 REGL2 IO = 250 mA to 750 mA, Tj = 25°C4.0 60 mV
Bias current IBias Tj = 25°C3.9 8 mA
Bias current fluctuation to input ∆IBias(IN) VI = 8.5 V to 25 V, Tj = 25°C1.3 mA
Bias current fluctuation to load ∆IBias(L) IO = 5 mA to 1 A, Tj = 25°C0.5 mA
Ripple rejection ratio RR VI = 9 V to 19 V, IO = 100 mA, f = 120 Hz 59 dB
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
AN78xxNSP Series
4SFF00011BEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN7807NSP (7 V type)
The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10 ms)
that the characteristic value drift due to the chip junction temperature rise can be ignored.
Unless otherwise specified, VI = 12 V, IO = 500 mA, CI = 0.33 µF and CO = 0.1 µF
Parameter Symbol Conditions Min Typ Max Unit
Output noise voltage VNO f = 10 Hz to 100 kHz 46 µV
Minimum input/output voltage VDIF(min) IO = 1 A, Tj = 25°C2V
difference
Output short-circuit current IO(Short) VI = 35 V, Tj = 25°C700 mA
Peak output current IO(Peak) Tj = 25°C2.0 A
Output voltage temperature ∆VO / TaIO = 5 mA, Tj = 0°C to 125°C− 0.5 mV/°C
coefficient
Thermal protection operating Tj(TH) IO = 5 mA 150 °C
temperature
Parameter Symbol Conditions Min Typ Max Unit
Output voltage VO1 Tj = 25°C 6.7 7 7.3 V
Output voltage tolerance VO2 VI = 10 V to 22 V, IO = 5 mA to 1 A 6.6 7.4 V
Tj = 25°C, PD < 5 W
Line regulation 1 REGIN1 VI = 9.5 V to 25 V, Tj = 25°C5 140 mV
Line regulation 2 REGIN2 VI = 10 V to 15 V, Tj = 25°C1.5 70 mV
Load regulation 1 REGL1 IO = 5 mA to 1.5 A, Tj = 25°C14 140 mV
Load regulation 2 REGL2 IO = 250 mA to 750 mA, Tj = 25°C4.0 70 mV
Bias current IBias Tj = 25°C3.9 8 mA
Bias current fluctuation to input ∆IBias(IN) VI = 9.5 V to 25 V, Tj = 25°C1.0 mA
Bias current fluctuation to load ∆IBias(L) IO = 5 mA to 1 A, Tj = 25°C0.5 mA
Ripple rejection ratio RR
V
I
= 10 V to 20 V, I
O
= 100 mA, f = 120 Hz
57 dB
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
AN78xxNSP Series
5
SFF00011BEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN7808NSP (8 V type)
The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10 ms)
that the characteristic value drift due to the chip junction temperature rise can be ignored.
Unless otherwise specified, VI = 14 V, IO = 500 mA, CI = 0.33 µF and CO = 0.1 µF
Parameter Symbol Conditions Min Typ Max Unit
Output noise voltage VNO f = 10 Hz to 100 kHz 52 µV
Minimum input/output voltage VDIF(min) IO = 1 A, Tj = 25°C2V
difference
Output short-circuit current IO(Short) VI = 35 V, Tj = 25°C700 mA
Peak output current IO(Peak) Tj = 25°C2.0 A
Output voltage temperature ∆VO / TaIO = 5 mA, Tj = 0°C to 125°C− 0.5 mV/°C
coefficient
Thermal protection operating Tj(TH) IO = 5 mA 150 °C
temperature
Parameter Symbol Conditions Min Typ Max Unit
Output voltage VO1 Tj = 25°C 7.7 8 8.3 V
Output voltage tolerance VO2 VI = 11 V to 23 V, IO = 5 mA to 1 A 7.6 8.4 V
Tj = 25°C, PD < 5 W
Line regulation 1 REGIN1 VI = 10.5 V to 25 V, Tj = 25°C6 160 mV
Line regulation 2 REGIN2 VI = 11 V to 17 V, Tj = 25°C280mV
Load regulation 1 REGL1 IO = 5 mA to 1.5 A, Tj = 25°C12 160 mV
Load regulation 2 REGL2 IO = 250 mA to 750 mA, Tj = 25°C4.0 80 mV
Bias current IBias Tj = 25°C3.9 8 mA
Bias current fluctuation to input ∆IBias(IN) VI = 10.5 V to 25 V, Tj = 25°C1.0 mA
Bias current fluctuation to load ∆IBias(L) IO = 5 mA to 1 A, Tj = 25°C0.5 mA
Ripple rejection ratio RR
V
I
= 11.5 V to 21.5 V, I
O
= 100 mA, f = 120 Hz
56 dB
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
AN78xxNSP Series
6SFF00011BEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN7809NSP (9 V type)
The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10 ms)
that the characteristic value drift due to the chip junction temperature rise can be ignored.
Unless otherwise specified, VI = 15 V, IO = 500 mA, CI = 0.33 µF and CO = 0.1 µF
Parameter Symbol Conditions Min Typ Max Unit
Output noise voltage VNO f = 10 Hz to 100 kHz 57 µV
Minimum input/output voltage VDIF(min) IO = 1 A, Tj = 25°C2V
difference
output short-circuit current IO(Short) VI = 35 V, Tj = 25°C700 mA
Peak output current IO(Peak) Tj = 25°C2.0 A
Output voltage temperature ∆VO / TaIO = 5 mA, Tj = 0°C to 125°C− 0.5 mV/°C
coefficient
Thermal protection operating Tj(TH) IO = 5 mA 150 °C
temperature
Parameter Symbol Conditions Min Typ Max Unit
Output voltage VO1 Tj = 25°C 8.65 9 9.35 V
Output voltage tolerance VO2 VI = 12 V to 24 V, IO = 5 mA to 1 A 8.55 9.45 V
Tj = 25°C, PD < 5 W
Line regulation 1 REGIN1 VI = 11.5 V to 26 V, Tj = 25°C7 180 mV
Line regulation 2 REGIN2 VI = 12 V to 18 V, Tj = 25°C290mV
Load regulation 1 REGL1 IO = 5 mA to 1.5 A, Tj = 25°C12 180 mV
Load regulation 2 REGL2 IO = 250 mA to 750 mA, Tj = 25°C4.0 90 mV
Bias current IBias Tj = 25°C3.9 8 mA
Bias current fluctuation to input ∆IBias(IN) VI = 11.5 V to 26 V, Tj = 25°C1.0 mA
Bias current fluctuation to load ∆IBias(L) IO = 5 mA to 1 A, Tj = 25°C0.5 mA
Ripple rejection ratio RR
V
I
= 11.5 V to 21.5 V, I
O
= 100 mA, f = 120 Hz
56 dB
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
AN78xxNSP Series
7
SFF00011BEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN7810NSP (10 V type)
The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10 ms)
that the characteristic value drift due to the chip junction temperature rise can be ignored.
Unless otherwise specified, VI = 16 V, IO = 500 mA, CI = 0.33 µF and CO = 0.1 µF
Parameter Symbol Conditions Min Typ Max Unit
Output noise voltage VNO f = 10 Hz to 100 kHz 56 µV
Minimum input/output voltage VDIF(min) IO = 1 A, Tj = 25°C2V
difference
Output short-circuit current IO(Short) VI = 35 V, Tj = 25°C700 mA
Peak output current IO(Peak) Tj = 25°C2.0 A
Output voltage temperature ∆VO / TaIO = 5 mA, Tj = 0°C to 125°C− 0.6 mV/°C
coefficient
Thermal protection operating Tj(TH) IO = 5 mA 150 °C
temperature
Parameter Symbol Conditions Min Typ Max Unit
Output voltage VO1 Tj = 25°C 9.6 10 10.4 V
Output voltage tolerance VO2 VI = 13 V to 25 V, IO = 5 mA to 1 A 9.5 10.5 V
Tj = 25°C, PD < 5 W
Line regulation 1 REGIN1 VI = 12.5 V to 27 V, Tj = 25°C8 200 mV
Line regulation 2 REGIN2 VI = 13 V to 19 V, Tj = 25°C2.5 100 mV
Load regulation 1 REGL1 IO = 5 mA to 1.5 A, Tj = 25°C12 200 mV
Load regulation 2 REGL2 IO = 250 mA to 750 mA, Tj = 25°C4.0 100 mV
Bias current IBias Tj = 25°C3.9 8 mA
Bias current fluctuation to input ∆IBias(IN) VI = 12.5 V to 27 V, Tj = 25°C1.0 mA
Bias current fluctuation to load ∆IBias(L) IO = 5 mA to 1 A, Tj = 25°C0.5 mA
Ripple rejection ratio RR
V
I
= 13 V to 23 V, I
O
= 100 mA, f = 120 Hz
56 dB
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
AN78xxNSP Series
8SFF00011BEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN7812NSP (12 V type)
The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10 ms)
that the characteristic value drift due to the chip junction temperature rise can be ignored.
Unless otherwise specified, VI = 19 V, IO = 500 mA, CI = 0.33 µF and CO = 0.1 µF
Parameter Symbol Conditions Min Typ Max Unit
Output noise voltage VNO f = 10 Hz to 100 kHz 75 µV
Minimum input/output voltage VDIF(min) IO = 1 A, Tj = 25°C2V
difference
Output short-circuit current IO(Short) VI = 35 V, Tj = 25°C700 mA
Peak output current IO(Peak) Tj = 25°C2.0 A
Output voltage temperature ∆VO / TaIO = 5 mA, Tj = 0°C to 125°C− 0.8 mV/°C
coefficient
Thermal protection operating Tj(TH) IO = 5 mA 150 °C
temperature
Parameter Symbol Conditions Min Typ Max Unit
Output voltage VO1 Tj = 25°C 11.5 12 12.5 V
Output voltage tolerance VO2 VI = 15 V to 27 V, IO = 5 mA to 1 A 11.4 12.6 V
Tj = 25°C, PD < 5 W
Line regulation 1 REGIN1 VI = 14.5 V to 30 V, Tj = 25°C10 240 mV
Line regulation 2 REGIN2 VI = 16 V to 22 V, Tj = 25°C2 120 mV
Load regulation 1 REGL1 IO = 5 mA to 1.5 A, Tj = 25°C12 240 mV
Load regulation 2 REGL2 IO = 250 mA to 750 mA, Tj = 25°C4.0 120 mV
Bias current IBias Tj = 25°C4.0 8 mA
Bias current fluctuation to input ∆IBias(IN) VI = 14.5 V to 30 V, Tj = 25°C1.0 mA
Bias current fluctuation to load ∆IBias(L) IO = 5 mA to 1 A, Tj = 25°C0.5 mA
Ripple rejection ratio RR
V
I
= 15 V
to
25 V, I
O
= 100 mA, f = 120 Hz
55 dB
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
AN78xxNSP Series
9
SFF00011BEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN7815NSP (15 V type)
The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10 ms)
that the characteristic value drift due to the chip junction temperature rise can be ignored.
Unless otherwise specified, VI = 23 V, IO = 500 mA, CI = 0.33 µF and CO = 0.1 µF
Parameter Symbol Conditions Min Typ Max Unit
Output noise voltage VNO f = 10 Hz to 100 kHz 90 µV
Minimum input/output voltage VDIF(min) IO = 1 A, Tj = 25°C2V
difference
Output short-circuit current IO(Short) VI = 35 V, Tj = 25°C700 mA
Peak output current IO(Peak) Tj = 25°C2.0 A
Output voltage temperature ∆VO / TaIO = 5 mA, Tj = 0°C to 125°C−1.0 mV/°C
coefficient
Thermal protection operating Tj(TH) IO = 5 mA 150 °C
temperature
Parameter Symbol Conditions Min Typ Max Unit
Output voltage VO1 Tj = 25°C 14.4 15 15.6 V
Output voltage tolerance VO2 VI = 18 V to 30 V, IO = 5 mA to 1 A 14.25 15.75 V
Tj = 25°C, PD < 5 W
Line regulation 1 REGIN1 VI = 17.5 V to 30 V, Tj = 25°C11 300 mV
Line regulation 2 REGIN2 VI = 20 V to 26 V, Tj = 25°C3 150 mV
Load regulation 1 REGL1 IO = 5 mA to 1.5 A, Tj = 25°C12 300 mV
Load regulation 2 REGL2 IO = 250 mA to 750 mA, Tj = 25°C4.0 150 mV
Bias current IBias Tj = 25°C4.0 8 mA
Bias current fluctuation to input ∆IBias(IN) VI = 17.5 V to 30 V, Tj = 25°C1.0 mA
Bias current fluctuation to load ∆IBias(L) IO = 5 mA to 1 A, Tj = 25°C0.5 mA
Ripple rejection ratio RR
V
I
= 18.5 V to 28.5 V, I
O
= 100 mA, f = 120 Hz
54 dB
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
AN78xxNSP Series
10 SFF00011BEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN7818NSP (18 V type)
The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10 ms)
that the characteristic value drift due to the chip junction temperature rise can be ignored.
Unless otherwise specified, VI = 27 V, IO = 500 mA, CI = 0.33 µF and CO = 0.1 µF
Parameter Symbol Conditions Min Typ Max Unit
Output noise voltage VNO f = 10 Hz to 100 kHz 110 µV
Minimum input/output voltage VDIF(min) IO = 1 A, Tj = 25°C2V
difference
Output short-circuit current IO(Short) VI = 35 V, Tj = 25°C700 mA
Peak output current IO(Peak) Tj = 25°C2.0 A
Output voltage temperature ∆VO / TaIO = 5 mA, Tj = 0°C to 125°C−1.1 mV/°C
coefficient
Thermal protection operating Tj(TH) IO = 5 mA 150 °C
temperature
Parameter Symbol Conditions Min Typ Max Unit
Output voltage VO1 Tj = 25°C 17.3 18 18.7 V
Output voltage tolerance VO2 VI = 21 V to 33 V, IO = 5 mA to 1 A 17.1 18.9 V
Tj = 25°C, PD < 5 W
Line regulation 1 REGIN1 VI = 21 V to 33 V, Tj = 25°C14 360 mV
Line regulation 2 REGIN2 VI = 24 V to 30 V, Tj = 25°C4 180 mV
Load regulation 1 REGL1 IO = 5 mA to 1.5 A, Tj = 25°C14 360 mV
Load regulation 2 REGL2 IO = 250 mA to 750 mA, Tj = 25°C4.0 180 mV
Bias current IBias Tj = 25°C4.1 8 mA
Bias current fluctuation to input ∆IBias(IN) VI = 21 V to 33 V, Tj = 25°C1.0 mA
Bias current fluctuation to load ∆IBias(L) IO = 5 mA to 1 A, Tj = 25°C0.5 mA
Ripple rejection ratio RR
V
I
= 22 V
to
32 V, I
O
= 100 mA, f = 120 Hz
53 dB
•Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
AN78xxNSP Series
11
SFF00011BEB
5.00
6.00
0 25 15050 75 100 125
4.00
3.00
2.00
0.85
0.70
1.00
1.40
0
Mounted on
glass epoxy board 2
(50 × 50 × t1.5 mm
3
)
R
th(j-a)
= 89.3°C/W
Mounted on
glass epoxy board 1
(20 × 20 × t1.7 mm
3
)
R
th(j-a)
= 147.0°C/W
Independent IC
without a heat sink
R
th( j-a)
= 178.0°C/W
Mounted on Al board
(50 × 50 × t2.0 mm
3
)
R
th(j-a)
= 25.0°C/W
Ambient temperature Ta (°C)
Power dissipation P
D
(W)
■Application Notes
1. PD Ta curves of SP-3SU PD Ta
2. Main Characteristics
Minimum input/output voltage difference vs. Minimum input/output voltage difference
load current characteristic temperature characteristic
Peak output current temperature characteristic Current limit characteristics
V
DIF
(V)
100.80.60.40.2
I
O
(A)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2
T
j
= 25°C
I
O(Peak)
(A)
120−40 80400−20 1006020
T
a
(°C)
0.000
2.500
0.500
1.000
1.500
2.000
VDIF(min) (V)
1.800
1.820
1.840
1.860
1.880
1.900
1.920
1.940
1.960
1.980
2.000
120−40 80400−20 1006020
Ta (°C)
IO = −1 A
V
O
(V)
21.5100.5
I
O
(A)
0
6
1
2
3
4
5
V
I
= 10 V
V
I
= 20 V
V
I
= 30 V
T
j
= 25°C
Please read the following notes before using the datasheets
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semiconductor products best suited to their applications.
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product types, technical data, and so on, is subject to change without notice.
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Consult our sales staff in advance for information on the following applications:
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2001 MAR
