Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Ease of Paralleling BVDSS 200V
▼ Fast Switching Characteristic RDS(ON) 0.4Ω
▼ Simple Drive Requirement ID9.0A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 1.7 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice
Parameter
Storage Temperature Range -55 to 150
Parameter
Linear Derating Factor
IRF630
±20
Rating
200
RoHS-compliant Product
9.0
36
74
9
5.7
40
0.59
-55 to 150
200420071-1/4
GDSTO-220(P)
The TO-220 and package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
G
D
S
A
PEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 200 - - V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.4A - - 0.4 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=5.4A - 4.2 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=200V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=125oC) VDS=160V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge3ID=5.9A - 25 45 nC
Qgs Gate-Source Charge VDS=160V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 14 - nC
td(on) Turn-on Delay Time3VDD=100V - 10 - ns
trRise Time ID=5.9A - 29 - ns
td(off) Turn-off Delay Time RG=12Ω,VGS=10V - 32 - ns
tfFall Time RD=16Ω-24-ns
Ciss Input Capacitance VGS=0V - 630 1010 pF
Coss Output Capacitance VDS=25V - 210 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF
RgGate Resistance f=1.0MHz - 1.6 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3Tj=25℃, IS=9.0A, VGS=0V - - 1.5 V
trr Reverse Recovery Time3IS=5.9A, VGS=0V, - 225 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 2.2 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
IRF630
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
IRF630
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
4
8
12
16
02468
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
8.0V
7.0V
6.0V
VG=5.0V
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=5.4A
VG=10V
0
2
4
6
8
10
12
0 2 4 6 8 10 12 14
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
8.0V
7.0V
6.0V
VG=5.0V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCT
j = 25oC
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
IRF630
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse 1s
100us
1ms
10ms
100m
0
2
4
6
8
10
12
0102030
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=5.9A
VDS =40V
V DS =100V
V DS =160V
10
1000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
DC
