ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D-Pak (TO-263), and TO-262 and TO220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. Applications * Automotive Ignition Coil Driver Circuits * Coil- On Plug Applications Features EcoSPARKTM devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. * Space saving D-Pak package availability * SCIS Energy = 300mJ at TJ = 25oC * Logic Level Gate Drive Package Symbol JEDEC TO-263AB D-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 GATE JEDEC TO-252AA D-Pak JEDEC TO-262AA E R2 C G G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings TA = 25C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 430 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ ESCIS150 At Starting TJ = 150C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ IC25 Collector Current Continuous, At TC = 25C, See Fig 9 21 A IC110 Collector Current Continuous, At TC = 110C, See Fig 9 17 A VGEM Gate to Emitter Voltage Continuous 10 V PD Power Dissipation Total TC = 25C 150 W Power Dissipation Derating TC > 25C 1.0 W/C TJ TSTG Operating Junction Temperature Range -40 to 175 C Storage Junction Temperature Range -40 to 175 C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 C Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 C ESD Electrostatic Discharge Voltage at 100pF, 1500 4 kV TL (c)2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 October 2004 Device Marking V3040D Device ISL9V3040D3ST Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 V3040S V3040P ISL9V3040S3ST TO-263AB 330mm 24mm 800 ISL9V3040P3 TO-220AA Tube N/A 50 V3040S ISL9V3040S3 TO-262AA Tube N/A 50 V3040D ISL9V3040D3S TO-252AA Tube N/A 75 V3040S ISL9V3040S3S TO-263AB Tube N/A 50 Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C 370 400 430 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C 390 420 450 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = 2mA Collector to Emitter Leakage Current VCER = 250V, RG = 1K, See Fig. 11 ICER IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance 12 14 - V TC = 25C - - 25 A TC = 150C - - 1 mA VEC = 24V, See TC = 25C Fig. 11 TC = 150C - - 1 mA - - 40 mA - 70 - 10K - 26K On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V TC = 25C, See Fig. 3 - 1.25 1.60 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.5V TC = 150C, See Fig. 4 - 1.58 1.80 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A, VGE = 4.5V TC = 150C - 1.90 2.20 V - 17 - nC TC = 25C 1.3 - 2.2 V TC = 150C 0.75 - 1.8 V - 3.0 - V Dynamic Characteristics QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 - 0.7 4 s - 2.1 7 s VCE = 300V, L = 500Hy, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 - 4.8 15 s - 2.8 15 s TJ = 25C, L = 3.0 mHy, RG = 1K, VGE = 5V, See Fig. 1 & 2 - - 300 mJ All packages - - 1.0 C/W Thermal Characteristics RJC Thermal Resistance Junction-Case (c)2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 30 RG = 1k, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25C TJ = 150C 10 5 SCIS Curves valid for Vclamp Voltages of <430V 0 30 RG = 1k, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25C 10 TJ = 150C 5 SCIS Curves valid for Vclamp Voltages of <430V 0 0 25 50 75 100 125 150 175 0 200 2 4 tCLP, TIME IN CLAMP (S) VGE = 3.7V VGE = 4.0V 1.26 1.22 VGE = 4.5V VGE = 5.0V VGE = 8.0V 1.14 -75 -50 -25 0 25 50 75 100 125 150 1.8 ICE = 10A 1.7 VGE = 3.7V VGE = 4.0V 1.6 1.5 1.4 VGE = 4.5V VGE = 5.0V 1.3 VGE = 8.0V 1.2 175 -75 -50 -25 0 TJ, JUNCTION TEMPERATURE (C) 50 75 100 125 150 175 Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 25 TJ, JUNCTION TEMPERATURE (C) Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature 20 10 Figure 2. Self Clamped Inductive Switching Current vs Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.30 1.18 8 L, INDUCTANCE (mHy) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp ICE = 6A 6 10 5 TJ = - 40C 25 VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 5 TJ = 25C 0 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs Collector Current (c)2004 Fairchild Semiconductor Corporation 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage vs Collector Current ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 5 TJ = 175C ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 0 25 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 20 15 TJ = 150C 10 TJ = 25C 5 TJ = -40C 0 0 1.0 2.0 3.0 4.0 1.0 2.0 1.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3.0 2.5 Figure 7. Collector to Emitter On-State Voltage vs Collector Current 4.5 Figure 8. Transfer Characteristics 25 2.2 VCE = VGE VGE = 4.0V 20 VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) 4.0 3.5 VGE, GATE TO EMITTER VOLTAGE (V) 15 10 5 ICE = 1mA 2.0 1.8 1.6 1.4 1.2 1.0 0 25 50 75 100 125 150 -50 175 -25 0 TC, CASE TEMPERATURE (C) 25 50 100 75 125 150 175 TJ JUNCTION TEMPERATURE (C) Figure 9. DC Collector Current vs Case Temperature Figure 10. Threshold Voltage vs Junction Temperature 12 10000 ICE = 6.5A, VGE = 5V, RG = 1K VECS = 24V SWITCHING TIME (S) LEAKAGE CURRENT (A) Resistive tOFF 10 1000 100 10 VCES = 300V Inductive tOFF 8 6 4 1 Resistive tON VCES = 250V 2 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 11. Leakage Current vs Junction Temperature (c)2004 Fairchild Semiconductor Corporation 175 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 12. Switching Time vs Junction Temperature ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves (Continued) 8 1600 IG(REF) = 1mA, RL = 1.25, TJ = 25C VGE, GATE TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) FREQUENCY = 1 MHz 1200 CIES 800 CRES 400 COES 7 6 5 VCE = 12V 4 3 2 VCE = 6V 1 0 0 0 5 10 15 20 0 25 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 12 16 20 24 28 32 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14. Gate Charge 430 BVCER, BREAKDOWN VOLTAGE (V) ICER = 10mA 425 420 TJ = - 40C TJ = 175C 415 TJ = 25C 410 405 400 395 390 10 100 1000 2000 3000 RG, SERIES GATE RESISTANCE (k) ZthJC, NORMALIZED THERMAL RESPONSE Figure 15. Breakdown Voltage vs Series Gate Resistance 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 PD 0.01 t2 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC SINGLE PULSE 10-3 10-6 10-5 10-4 10-3 10-2 10-1 T1, RECTANGULAR PULSE DURATION (s) Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case (c)2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves (Continued) L VCE R or L C PULSE GEN RG G LOAD C RG = 1K DUT G + DUT 5V E VCE E Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit BVCES VCE tP VCE L C VARY tP TO OBTAIN REQUIRED PEAK IAS VGE IAS VDD + RG G VDD DUT - E tP 0V IAS 0 0.01 tAV Figure 19. Energy Test Circuit (c)2004 Fairchild Semiconductor Corporation Figure 20. Energy Waveforms ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Test Circuit and Waveforms REV 7 March 2002 th JUNCTION ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 CTHERM1 th 6 2.1e -3 CTHERM2 6 5 1.4e -1 CTHERM3 5 4 7.3e -3 CTHERM4 4 3 2.1e -1 CTHERM5 3 2 1.1e -1 CTHERM6 2 tl 6.2e +6 RTHERM1 th 6 1.2e -1 RTHERM2 6 5 1.9e -1 RTHERM3 5 4 2.2e -1 RTHERM4 4 3 6.0e -2 RTHERM5 3 2 5.8e -2 RTHERM6 2 tl 1.6e -3 RTHERM1 6 RTHERM2 SABER Thermal Model SABER thermal model ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 2.1e -3 ctherm.ctherm2 6 5 = 1.4e -1 ctherm.ctherm3 5 4 = 7.3e -3 ctherm.ctherm4 4 3 = 2.2e -1 ctherm.ctherm5 3 2 =1.1e -1 ctherm.ctherm6 2 tl = 6.2e +6 rtherm.rtherm1 th 6 = 1.2e -1 rtherm.rtherm2 6 5 = 1.9e -1 rtherm.rtherm3 5 4 = 2.2e -1 rtherm.rtherm4 4 3 = 6.0e -2 rtherm.rtherm5 3 2 = 5.8e -2 rtherm.rtherm6 2 tl = 1.6e -3 } CTHERM1 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl (c)2004 Fairchild Semiconductor Corporation CASE ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 SPICE Thermal Model TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13