2SD2012 (R) NPN SILICON POWER TRANSISTOR HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS GENERAL PURPOSE SWITCHING DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. 3 1 2 TO-220F INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO Parameter Collector-Base Voltage (I E = 0) V CEO V EBO IC I CM IB Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current P tot Visol Total Dissipation at T c 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature T stg Tj October 2003 Value 60 Unit V 60 7 3 6 0.5 V V A A A 25 W 1500 V -65 to 150 150 o o C C 1/5 2SD2012 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) V CB = 60 V 100 A I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 100 A V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V CE(sat) I C = 50 mA 60 Collector-Emitter Saturation Voltage IC = 2 A I B = 0.2 A V BE Base-Emitter Voltage I C = 0.5 A V CE = 5 V h FE DC Current Gain I C = 0.5 A IC = 2 A V CE = 5 V V CE = 5 V Transition frequency V CE = 5 V Collector-Base Capacitance V CB = 10 V fT C CBO IE = 0 Safe Operating Area V 0.4 0.75 100 20 1 V 1 V 320 I C = 0.5 A 3 MHz f = 1 MHz 35 pF Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/5 Min. Derating Curve 2SD2012 DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage 3/5 2SD2012 TO-220F MECHANICAL DATA mm DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.50 4.90 0.177 0.193 B 2.34 2.74 0.092 0.108 D 2.56 2.96 0.101 0.117 E 0.45 0.60 0.018 F 0.70 0.90 0.028 0.50 F1 0.020 0.058 5.08 G1 2.34 H 9.96 L2 2.54 0.024 0.035 1.47 G 0.200 2.74 0.092 10.36 0.392 15.80 0.100 0.108 0.408 0.622 L4 9.45 10.05 0.372 0.396 L6 15.67 16.07 0.617 0.633 L7 8.99 9.39 0.354 0.370 L8 Dia 4/5 inch 3.30 3.08 0.130 3.28 0.121 0.129 2SD2012 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5