2SD2012
NPN SILICON POWER TRANSISTOR
■HIGH DC CURRENT GAIN
■LOW SATURATION VOLTAGE
■INSULATED PACKAGE FOR EASY
MOUNTING
APPLICATIONS
■GENERAL PURPOSE POWER AMPLIFIERS
■GENERAL PURPOSE SWITCHING
DESCRIPTION
The 2SD2012 is a silicon NPN power transistor
housed in TO-220F insulated package.
It is inteded for power linear and switching
applications.
®
INTERNAL SCHEMATI C DIAG RAM
October 2003
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 60 V
VCEO Collector-Emitter Voltage (IB = 0) 60 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 3 A
ICM Collector Peak Current (tp < 5 ms) 6 A
IBBase Current 0.5 A
Ptot Total Dissipation at Tc ≤ 25 oC25 W
Visol Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink 1500 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
TO-220F
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 5 oC/W
ELE CT RICAL CHARACTERIST ICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 60 V 100 µA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 7 V 100 µA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 50 mA 60 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 2 A IB = 0.2 A 0.4 1 V
VBE∗Base-Emitter Voltage IC = 0.5 A VCE = 5 V 0.75 1 V
hFE∗DC Current Gain IC = 0.5 A VCE = 5 V
IC = 2 A VCE = 5 V 100
20 320
fTTransition frequency VCE = 5 V IC = 0.5 A 3 MHz
CCBO Collector-Base
Capacitance VCB = 10 V IE = 0 f = 1 MHz 35 pF
∗ P ulsed: Pulse durat ion = 300 µs, d uty cycle ≤ 2 %
Safe O perat ing Area Der ating Curve
2SD2012
2/5
DC Current Gain
Base Em itt er On Voltage
Collector Em itt er Saturation Volt a ge
2SD2012
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.50 4.90 0.177 0.193
B 2.34 2.74 0.092 0.108
D 2.56 2.96 0.101 0.117
E 0.45 0.50 0.60 0.018 0.020 0.024
F 0.70 0.90 0.028 0.035
F1 1.47 0.058
G 5.08 0.200
G1 2.34 2.54 2.74 0.092 0.100 0.108
H 9.96 10.36 0.392 0.408
L2 15.80 0.622
L4 9.45 10.05 0.372 0.396
L6 15.67 16.07 0.617 0.633
L7 8.99 9.39 0.354 0.370
L8 3.30 0.130
Dia 3.08 3.28 0.121 0.129
TO-220F MECHANICAL DATA
2SD2012
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird part ies which may resu lt from its use . No li cen s e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specif ication mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. S TMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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2SD2012
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